SE438747B - Feldetekteringsanordning for ett dynamiskt minne - Google Patents

Feldetekteringsanordning for ett dynamiskt minne

Info

Publication number
SE438747B
SE438747B SE7904350A SE7904350A SE438747B SE 438747 B SE438747 B SE 438747B SE 7904350 A SE7904350 A SE 7904350A SE 7904350 A SE7904350 A SE 7904350A SE 438747 B SE438747 B SE 438747B
Authority
SE
Sweden
Prior art keywords
refresh
memory
circuit means
digital words
digital
Prior art date
Application number
SE7904350A
Other languages
English (en)
Swedish (sv)
Other versions
SE7904350L (sv
Inventor
R P Cenker
T W Fleming
F R Huff
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of SE7904350L publication Critical patent/SE7904350L/xx
Publication of SE438747B publication Critical patent/SE438747B/sv

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G06F11/106—Correcting systematically all correctable errors, i.e. scrubbing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
SE7904350A 1978-05-25 1979-05-17 Feldetekteringsanordning for ett dynamiskt minne SE438747B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/909,367 US4183096A (en) 1978-05-25 1978-05-25 Self checking dynamic memory system

Publications (2)

Publication Number Publication Date
SE7904350L SE7904350L (sv) 1979-11-26
SE438747B true SE438747B (sv) 1985-04-29

Family

ID=25427121

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7904350A SE438747B (sv) 1978-05-25 1979-05-17 Feldetekteringsanordning for ett dynamiskt minne

Country Status (12)

Country Link
US (1) US4183096A (cs)
JP (1) JPS54154228A (cs)
AU (1) AU531591B2 (cs)
BE (1) BE876484A (cs)
CA (1) CA1107862A (cs)
DE (1) DE2921243A1 (cs)
ES (1) ES480935A1 (cs)
FR (1) FR2426963A1 (cs)
GB (1) GB2021826B (cs)
IT (1) IT1114048B (cs)
NL (1) NL7904100A (cs)
SE (1) SE438747B (cs)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4506362A (en) * 1978-12-22 1985-03-19 Gould Inc. Systematic memory error detection and correction apparatus and method
US4360917A (en) * 1979-02-07 1982-11-23 The Warner & Swasey Company Parity fault locating means
US4241425A (en) * 1979-02-09 1980-12-23 Bell Telephone Laboratories, Incorporated Organization for dynamic random access memory
ATE8544T1 (de) * 1979-05-15 1984-08-15 Mostek Corporation Verfahren und schaltung zum pruefen der arbeitsweise eines internen regenerierungszaehlers in einem speicher mit wahlfreiem zugriff.
US4319356A (en) * 1979-12-19 1982-03-09 Ncr Corporation Self-correcting memory system
EP0031706B1 (en) * 1979-12-27 1984-11-07 Fujitsu Limited Apparatus and method for testing semiconductor memory devices
US4380812A (en) * 1980-04-25 1983-04-19 Data General Corporation Refresh and error detection and correction technique for a data processing system
US4412314A (en) * 1980-06-02 1983-10-25 Mostek Corporation Semiconductor memory for use in conjunction with error detection and correction circuit
EP0054023A1 (en) * 1980-06-02 1982-06-23 Mostek Corporation Semiconductor memory for use in conjunction with error detection and correction circuit
US4369510A (en) * 1980-07-25 1983-01-18 Honeywell Information Systems Inc. Soft error rewrite control system
US4359771A (en) * 1980-07-25 1982-11-16 Honeywell Information Systems Inc. Method and apparatus for testing and verifying the operation of error control apparatus within a memory
EP0059188A1 (en) * 1980-09-08 1982-09-08 Mostek Corporation Tape burn-in circuit
US4380805A (en) * 1980-09-08 1983-04-19 Mostek Corporation Tape burn-in circuit
EP0082198A1 (en) * 1981-06-26 1983-06-29 Ncr Corporation High speed memory error checker
US4542454A (en) * 1983-03-30 1985-09-17 Advanced Micro Devices, Inc. Apparatus for controlling access to a memory
US4612640A (en) * 1984-02-21 1986-09-16 Seeq Technology, Inc. Error checking and correction circuitry for use with an electrically-programmable and electrically-erasable memory array
JPH0620303B2 (ja) * 1984-11-08 1994-03-16 日本電信電話株式会社 フレ−ム間符号化方式におけるリフレッシュ処理方式
CA1240066A (en) * 1985-08-15 1988-08-02 John R. Ramsay Dynamic memory refresh and parity checking circuit
JPH087995B2 (ja) * 1985-08-16 1996-01-29 富士通株式会社 ダイナミツク半導体記憶装置のリフレツシユ方法および装置
US4691303A (en) * 1985-10-31 1987-09-01 Sperry Corporation Refresh system for multi-bank semiconductor memory
US4783782A (en) * 1985-12-12 1988-11-08 Alcatel U.S.A. Corporation Manufacturing test data storage apparatus for dynamically reconfigurable cellular array processor chip
US4733393A (en) * 1985-12-12 1988-03-22 Itt Corporation Test method and apparatus for cellular array processor chip
US6760881B2 (en) 2001-10-16 2004-07-06 International Business Machines Corporation Method for combining refresh operation with parity validation in a DRAM-based content addressable memory (CAM)
FR2851862B1 (fr) * 2003-02-27 2006-12-29 Radiotelephone Sfr Procede de generation d'une permutation pseudo-aleatoire d'un mot comportant n digits
US7752427B2 (en) * 2005-12-09 2010-07-06 Atmel Corporation Stack underflow debug with sticky base
US20080080284A1 (en) * 2006-09-15 2008-04-03 Peter Mayer Method and apparatus for refreshing memory cells of a memory
US8621324B2 (en) * 2010-12-10 2013-12-31 Qualcomm Incorporated Embedded DRAM having low power self-correction capability
US9583219B2 (en) 2014-09-27 2017-02-28 Qualcomm Incorporated Method and apparatus for in-system repair of memory in burst refresh
JP7016332B2 (ja) * 2019-07-05 2022-02-04 華邦電子股▲ふん▼有限公司 半導体メモリ装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1197418A (en) * 1969-02-05 1970-07-01 Ibm Data Storage Apparatus
US3801964A (en) * 1972-02-24 1974-04-02 Advanced Memory Sys Inc Semiconductor memory with address decoding
US3814922A (en) * 1972-12-01 1974-06-04 Honeywell Inf Systems Availability and diagnostic apparatus for memory modules
US3944800A (en) * 1975-08-04 1976-03-16 Bell Telephone Laboratories, Incorporated Memory diagnostic arrangement

Also Published As

Publication number Publication date
FR2426963A1 (fr) 1979-12-21
FR2426963B1 (cs) 1985-03-08
IT7922960A0 (it) 1979-05-24
SE7904350L (sv) 1979-11-26
US4183096A (en) 1980-01-08
AU531591B2 (en) 1983-09-01
CA1107862A (en) 1981-08-25
ES480935A1 (es) 1980-01-16
DE2921243A1 (de) 1979-11-29
IT1114048B (it) 1986-01-27
GB2021826A (en) 1979-12-05
DE2921243C2 (cs) 1987-06-25
GB2021826B (en) 1982-09-22
BE876484A (fr) 1979-09-17
AU4724579A (en) 1979-11-29
JPS54154228A (en) 1979-12-05
NL7904100A (nl) 1979-11-27

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