SE438575B - I sidled orienterad halvledaranordning - Google Patents
I sidled orienterad halvledaranordningInfo
- Publication number
- SE438575B SE438575B SE7812443A SE7812443A SE438575B SE 438575 B SE438575 B SE 438575B SE 7812443 A SE7812443 A SE 7812443A SE 7812443 A SE7812443 A SE 7812443A SE 438575 B SE438575 B SE 438575B
- Authority
- SE
- Sweden
- Prior art keywords
- diffusion region
- region
- diffusion
- radius
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000009792 diffusion process Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 11
- 230000007704 transition Effects 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 8
- 230000010354 integration Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14498277A JPS5478092A (en) | 1977-12-05 | 1977-12-05 | Lateral semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7812443L SE7812443L (sv) | 1979-06-06 |
| SE438575B true SE438575B (sv) | 1985-04-22 |
Family
ID=15374717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7812443A SE438575B (sv) | 1977-12-05 | 1978-12-04 | I sidled orienterad halvledaranordning |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4361846A (ja) |
| JP (1) | JPS5478092A (ja) |
| DE (1) | DE2852402A1 (ja) |
| FR (1) | FR2410880A1 (ja) |
| GB (1) | GB2009508B (ja) |
| NL (1) | NL183860C (ja) |
| SE (1) | SE438575B (ja) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3063943D1 (en) * | 1979-03-22 | 1983-08-04 | Tokyo Shibaura Electric Co | Semiconductor device and manufacturing method thereof |
| JPS57201062A (en) * | 1981-06-05 | 1982-12-09 | Nec Corp | Semiconductor device |
| JPS58101459A (ja) * | 1981-12-11 | 1983-06-16 | Hitachi Ltd | 半導体装置 |
| SE443619B (sv) * | 1984-03-09 | 1986-03-03 | Z Lyften Prod Ab | Vridmomentkennande koppling |
| WO1985005224A1 (en) * | 1984-05-02 | 1985-11-21 | Bell Telephone Manufacturing Company Naamloze Venn | Semiconductor device and arrangement |
| JPH01174633U (ja) * | 1988-05-31 | 1989-12-12 | ||
| IT220662Z2 (it) * | 1990-10-31 | 1993-10-08 | Elasis Sistema Ricerca Fita Nel Mezzogiorno Soc.Consortile P.A. | Perfezionamenti alla valvola pilota e alla relativa ancora di comando odi un iniettore elettromagnetico per sistemi di iniezione del combustibile di motori a combustione interna |
| JP3124085B2 (ja) * | 1991-12-02 | 2001-01-15 | 沖電気工業株式会社 | 半導体装置 |
| US5744851A (en) * | 1992-01-27 | 1998-04-28 | Harris Corporation | Biasing of island-surrounding material to suppress reduction of breakdown voltage due to field plate acting on buried layer/island junction between high and low impurity concentration regions |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA906667A (en) * | 1972-08-01 | W. Ruegg Heinz | Semiconductor device having a lateral transistor | |
| US4193836A (en) * | 1963-12-16 | 1980-03-18 | Signetics Corporation | Method for making semiconductor structure |
| US3461360A (en) * | 1965-06-30 | 1969-08-12 | Ibm | Semiconductor devices with cup-shaped regions |
| US3443173A (en) * | 1966-05-17 | 1969-05-06 | Sprague Electric Co | Narrow emitter lateral transistor |
| GB1140822A (en) * | 1967-01-26 | 1969-01-22 | Westinghouse Brake & Signal | Semi-conductor elements |
| GB1217880A (en) * | 1967-10-13 | 1970-12-31 | Rca Corp | Lateral transistor with auxiliary control electrode |
| US3651565A (en) * | 1968-09-09 | 1972-03-28 | Nat Semiconductor Corp | Lateral transistor structure and method of making the same |
| NL162511C (nl) * | 1969-01-11 | 1980-05-16 | Philips Nv | Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling. |
| US3878551A (en) * | 1971-11-30 | 1975-04-15 | Texas Instruments Inc | Semiconductor integrated circuits having improved electrical isolation characteristics |
| US3832732A (en) * | 1973-01-11 | 1974-08-27 | Westinghouse Electric Corp | Light-activated lateral thyristor and ac switch |
| JPS547438B2 (ja) * | 1973-05-14 | 1979-04-06 | ||
| US3898483A (en) * | 1973-10-18 | 1975-08-05 | Fairchild Camera Instr Co | Bipolar memory circuit |
| US4131809A (en) * | 1974-06-17 | 1978-12-26 | U.S. Philips Corporation | Symmetrical arrangement for forming a variable alternating-current resistance |
| US3958264A (en) * | 1974-06-24 | 1976-05-18 | International Business Machines Corporation | Space-charge-limited phototransistor |
| US3971060A (en) * | 1974-07-12 | 1976-07-20 | Texas Instruments Incorporated | TTL coupling transistor |
| US4099998A (en) * | 1975-11-03 | 1978-07-11 | General Electric Company | Method of making zener diodes with selectively variable breakdown voltages |
| US4079403A (en) * | 1976-11-01 | 1978-03-14 | Electric Power Research Institute, Inc. | Thyristor device with self-protection against breakover turn-on failure |
| US4228451A (en) * | 1978-07-21 | 1980-10-14 | Monolithic Memories, Inc. | High resistivity semiconductor resistor device |
-
1977
- 1977-12-05 JP JP14498277A patent/JPS5478092A/ja active Granted
-
1978
- 1978-11-28 GB GB7846422A patent/GB2009508B/en not_active Expired
- 1978-12-01 NL NLAANVRAGE7811807,A patent/NL183860C/xx not_active IP Right Cessation
- 1978-12-04 SE SE7812443A patent/SE438575B/sv not_active IP Right Cessation
- 1978-12-04 FR FR7834110A patent/FR2410880A1/fr active Granted
- 1978-12-04 DE DE19782852402 patent/DE2852402A1/de active Granted
-
1980
- 1980-08-07 US US06/176,207 patent/US4361846A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE2852402A1 (de) | 1979-06-07 |
| NL183860B (nl) | 1988-09-01 |
| US4361846A (en) | 1982-11-30 |
| FR2410880A1 (fr) | 1979-06-29 |
| DE2852402C2 (ja) | 1987-02-19 |
| GB2009508B (en) | 1982-07-28 |
| GB2009508A (en) | 1979-06-13 |
| NL7811807A (nl) | 1979-06-07 |
| JPS5478092A (en) | 1979-06-21 |
| JPS5726421B2 (ja) | 1982-06-04 |
| SE7812443L (sv) | 1979-06-06 |
| FR2410880B1 (ja) | 1984-06-22 |
| NL183860C (nl) | 1989-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAL | Patent in force |
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| NUG | Patent has lapsed |
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