CA906667A - Semiconductor device having a lateral transistor - Google Patents

Semiconductor device having a lateral transistor

Info

Publication number
CA906667A
CA906667A CA906667A CA906667DA CA906667A CA 906667 A CA906667 A CA 906667A CA 906667 A CA906667 A CA 906667A CA 906667D A CA906667D A CA 906667DA CA 906667 A CA906667 A CA 906667A
Authority
CA
Canada
Prior art keywords
semiconductor device
lateral transistor
transistor
lateral
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA906667A
Inventor
W. Ruegg Heinz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Publication date
Application granted granted Critical
Publication of CA906667A publication Critical patent/CA906667A/en
Expired legal-status Critical Current

Links

CA906667A Semiconductor device having a lateral transistor Expired CA906667A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA906667T

Publications (1)

Publication Number Publication Date
CA906667A true CA906667A (en) 1972-08-01

Family

ID=36414424

Family Applications (1)

Application Number Title Priority Date Filing Date
CA906667A Expired CA906667A (en) Semiconductor device having a lateral transistor

Country Status (1)

Country Link
CA (1) CA906667A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167425A (en) * 1975-09-19 1979-09-11 Siemens Aktiengesellschaft Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment
US4361846A (en) * 1977-12-05 1982-11-30 Hitachi, Ltd. Lateral type semiconductor devices with enlarged, large radii collector contact regions for high reverse voltage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4167425A (en) * 1975-09-19 1979-09-11 Siemens Aktiengesellschaft Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment
US4361846A (en) * 1977-12-05 1982-11-30 Hitachi, Ltd. Lateral type semiconductor devices with enlarged, large radii collector contact regions for high reverse voltage

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