CA906667A - Semiconductor device having a lateral transistor - Google Patents
Semiconductor device having a lateral transistorInfo
- Publication number
- CA906667A CA906667A CA906667A CA906667DA CA906667A CA 906667 A CA906667 A CA 906667A CA 906667 A CA906667 A CA 906667A CA 906667D A CA906667D A CA 906667DA CA 906667 A CA906667 A CA 906667A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor device
- lateral transistor
- transistor
- lateral
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA906667T |
Publications (1)
Publication Number | Publication Date |
---|---|
CA906667A true CA906667A (en) | 1972-08-01 |
Family
ID=36414424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA906667A Expired CA906667A (en) | Semiconductor device having a lateral transistor |
Country Status (1)
Country | Link |
---|---|
CA (1) | CA906667A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4167425A (en) * | 1975-09-19 | 1979-09-11 | Siemens Aktiengesellschaft | Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment |
US4361846A (en) * | 1977-12-05 | 1982-11-30 | Hitachi, Ltd. | Lateral type semiconductor devices with enlarged, large radii collector contact regions for high reverse voltage |
-
0
- CA CA906667A patent/CA906667A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4167425A (en) * | 1975-09-19 | 1979-09-11 | Siemens Aktiengesellschaft | Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment |
US4361846A (en) * | 1977-12-05 | 1982-11-30 | Hitachi, Ltd. | Lateral type semiconductor devices with enlarged, large radii collector contact regions for high reverse voltage |
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