SE438552B - Sett att optiskt undersoka ett monster - Google Patents

Sett att optiskt undersoka ett monster

Info

Publication number
SE438552B
SE438552B SE7812035A SE7812035A SE438552B SE 438552 B SE438552 B SE 438552B SE 7812035 A SE7812035 A SE 7812035A SE 7812035 A SE7812035 A SE 7812035A SE 438552 B SE438552 B SE 438552B
Authority
SE
Sweden
Prior art keywords
diffraction
intensity
pattern
substrate
diffraction grating
Prior art date
Application number
SE7812035A
Other languages
English (en)
Swedish (sv)
Other versions
SE7812035L (sv
Inventor
H P Kleinknecht
W A Bosenberg
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7812035L publication Critical patent/SE7812035L/xx
Publication of SE438552B publication Critical patent/SE438552B/sv

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
SE7812035A 1977-12-19 1978-11-22 Sett att optiskt undersoka ett monster SE438552B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/862,190 US4200396A (en) 1977-12-19 1977-12-19 Optically testing the lateral dimensions of a pattern

Publications (2)

Publication Number Publication Date
SE7812035L SE7812035L (sv) 1979-06-20
SE438552B true SE438552B (sv) 1985-04-22

Family

ID=25337882

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7812035A SE438552B (sv) 1977-12-19 1978-11-22 Sett att optiskt undersoka ett monster

Country Status (8)

Country Link
US (1) US4200396A (it)
JP (1) JPS60602B2 (it)
DE (1) DE2853427A1 (it)
IN (1) IN150097B (it)
IT (1) IT1101162B (it)
PL (1) PL123001B1 (it)
SE (1) SE438552B (it)
YU (1) YU41324B (it)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303341A (en) * 1977-12-19 1981-12-01 Rca Corporation Optically testing the lateral dimensions of a pattern
JPS5587904A (en) * 1978-12-29 1980-07-03 Ibm Scanning type optical apparatus for micromeasurement
US4330213A (en) * 1980-02-14 1982-05-18 Rca Corporation Optical line width measuring apparatus and method
JPS56124003A (en) * 1980-03-06 1981-09-29 Toshiba Corp Measuring device for pattern
US4408884A (en) * 1981-06-29 1983-10-11 Rca Corporation Optical measurements of fine line parameters in integrated circuit processes
JPS6076606A (ja) * 1983-10-03 1985-05-01 Nippon Kogaku Kk <Nikon> マスクの欠陥検査方法
US4806457A (en) * 1986-04-10 1989-02-21 Nec Corporation Method of manufacturing integrated circuit semiconductor device
FR2603379B1 (fr) * 1986-08-26 1988-12-02 Tissier Annie Procede de mesure du fluage d'un materiau et appareil de mise en oeuvre
JPS6426102A (en) * 1988-07-08 1989-01-27 Toshiba Corp Shape measuring instrument
US4964726A (en) * 1988-09-27 1990-10-23 General Electric Company Apparatus and method for optical dimension measurement using interference of scattered electromagnetic energy
DE3926199A1 (de) * 1989-08-08 1991-02-14 Siemens Ag Vorrichtung zur fehlererkennung in komplexen, relativ regelmaessigen strukturen
US5044750A (en) * 1990-08-13 1991-09-03 National Semiconductor Corporation Method for checking lithography critical dimensions
US5337146A (en) * 1992-03-30 1994-08-09 University Of New Orleans Diffraction-grating photopolarimeters and spectrophotopolarimeters
US5361137A (en) * 1992-08-31 1994-11-01 Texas Instruments Incorporated Process control for submicron linewidth measurement
US5666201A (en) * 1992-09-18 1997-09-09 J.A. Woollam Co. Inc. Multiple order dispersive optics system and method of use
US5805285A (en) * 1992-09-18 1998-09-08 J.A. Woollam Co. Inc. Multiple order dispersive optics system and method of use
JPH06296141A (ja) * 1993-03-02 1994-10-21 Murata Mach Ltd キャリア検出装置
DE19713362A1 (de) * 1997-03-29 1998-10-01 Zeiss Carl Jena Gmbh Konfokale mikroskopische Anordnung
US5984493A (en) * 1997-04-14 1999-11-16 Lucent Technologies Inc. Illumination system and method
US6483580B1 (en) * 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
US20020030813A1 (en) * 1999-03-29 2002-03-14 Norton Adam E. Spectroscopic measurement system using an off-axis spherical mirror and refractive elements
US6057249A (en) * 1998-04-21 2000-05-02 Vanguard International Semiconductor Corp. Method for improving optical proximity effect in storage node pattern
US6184984B1 (en) 1999-02-09 2001-02-06 Kla-Tencor Corporation System for measuring polarimetric spectrum and other properties of a sample
US6429943B1 (en) * 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US7382447B2 (en) * 2001-06-26 2008-06-03 Kla-Tencor Technologies Corporation Method for determining lithographic focus and exposure
JP4938219B2 (ja) * 2001-12-19 2012-05-23 ケーエルエー−テンカー コーポレイション 光学分光システムを使用するパラメトリック・プロフィーリング
US20030184769A1 (en) * 2002-03-27 2003-10-02 Houge Erik Cho Patterned implant metrology
US7515253B2 (en) 2005-01-12 2009-04-07 Kla-Tencor Technologies Corporation System for measuring a sample with a layer containing a periodic diffracting structure
DE102011121532A1 (de) * 2010-12-23 2012-06-28 Carl Zeiss Sms Gmbh Verfahren zur Charakterisierung einer Struktur auf einer Maske und Vorrichtung zur Durchführung des Verfahrens
EP3221897A1 (en) * 2014-09-08 2017-09-27 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3756695A (en) * 1970-07-14 1973-09-04 Minolta Camera Kk Optical low-pass filter
US3988564A (en) * 1972-07-17 1976-10-26 Hughes Aircraft Company Ion beam micromachining method
US4039370A (en) * 1975-06-23 1977-08-02 Rca Corporation Optically monitoring the undercutting of a layer being etched
US4030835A (en) * 1976-05-28 1977-06-21 Rca Corporation Defect detection system

Also Published As

Publication number Publication date
DE2853427A1 (de) 1979-06-21
DE2853427C2 (it) 1988-06-23
IT7829828A0 (it) 1978-11-15
JPS5492286A (en) 1979-07-21
JPS60602B2 (ja) 1985-01-09
PL123001B1 (en) 1982-09-30
PL211454A1 (it) 1980-04-21
YU292878A (en) 1982-06-30
YU41324B (en) 1987-02-28
IN150097B (it) 1982-07-17
IT1101162B (it) 1985-09-28
US4200396A (en) 1980-04-29
SE7812035L (sv) 1979-06-20

Similar Documents

Publication Publication Date Title
SE438552B (sv) Sett att optiskt undersoka ett monster
US4303341A (en) Optically testing the lateral dimensions of a pattern
KR100571863B1 (ko) 대상물의 막 두께를 측정하는 장치, 대상물의분광반사율을 측정하는 장치 및 방법과, 대상물상의이물을 검사하는 장치 및 방법
US5959731A (en) Optical micrometer for measuring thickness of transparent substrates based on optical absorption
US4964726A (en) Apparatus and method for optical dimension measurement using interference of scattered electromagnetic energy
US7003149B2 (en) Method and device for optically monitoring fabrication processes of finely structured surfaces in a semiconductor production
EP1218689B1 (en) Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
CN105593973B (zh) 用于确定聚焦的方法及设备
US4039370A (en) Optically monitoring the undercutting of a layer being etched
JP5249169B2 (ja) 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造の測定
US6897964B2 (en) Thickness measuring apparatus, thickness measuring method, and wet etching apparatus and wet etching method utilizing them
EP0480620B1 (en) Method for inspecting etched workpieces
US20040070773A1 (en) Thin film thickness measuring method and apparatus, and mehtod and apparatus for manufacturing a thin film device using the same
JP2000009437A (ja) 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置
JP2002116011A (ja) パターン評価装置及びパターン評価方法
US5830611A (en) Use of diffracted light from latent images in photoresist for optimizing image contrast
KR20010086079A (ko) 반도체 제조시 마이크로 구조화 표면의 제조 프로세스를광학적으로 모니터링하기 위한 방법 및 장치
WO1996003615A1 (en) Film thickness mapping using interferometric spectral imaging
JPH0634525A (ja) 高速分光測光装置
US20050112853A1 (en) System and method for non-destructive implantation characterization of quiescent material
Fontana Analysis of optical surfaces by means of surface plasmon spectroscopy
JPH0833359B2 (ja) 全反射蛍光ｘ線分析装置
JP4043660B2 (ja) 化合物半導体ウェハに含まれる特定元素の組成比のマッピング装置
Messinis et al. Theoretical and experimental demonstration of a state-of-the-art dark-field holographic microscope for advanced semiconductor metrology
JPS6316232A (ja) レ−ザビ−ム径の測定方法

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 7812035-9

Effective date: 19910611

Format of ref document f/p: F