SE437313B - Styrbar halvledarlikriktare innefattande organ for begrensning av styrbasskiktets storpotential - Google Patents
Styrbar halvledarlikriktare innefattande organ for begrensning av styrbasskiktets storpotentialInfo
- Publication number
- SE437313B SE437313B SE7809003A SE7809003A SE437313B SE 437313 B SE437313 B SE 437313B SE 7809003 A SE7809003 A SE 7809003A SE 7809003 A SE7809003 A SE 7809003A SE 437313 B SE437313 B SE 437313B
- Authority
- SE
- Sweden
- Prior art keywords
- potential
- ignition
- interference
- area
- electrode
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 59
- 230000000694 effects Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 73
- 230000003287 optical effect Effects 0.000 description 29
- 230000035945 sensitivity Effects 0.000 description 16
- 239000000306 component Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 239000003292 glue Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 101100298295 Drosophila melanogaster flfl gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 210000002196 fr. b Anatomy 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012035 limiting reagent Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013641 positive control Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2739187A DE2739187C2 (de) | 1977-08-31 | 1977-08-31 | Steuerbarer Halbleitergleichrichter mit einer Mehrzahl von Schichten unterschiedlichen Leitfähigkeitstyps |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7809003L SE7809003L (sv) | 1979-03-01 |
| SE437313B true SE437313B (sv) | 1985-02-18 |
Family
ID=6017744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7809003A SE437313B (sv) | 1977-08-31 | 1978-08-25 | Styrbar halvledarlikriktare innefattande organ for begrensning av styrbasskiktets storpotential |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4208669A (de) |
| DE (1) | DE2739187C2 (de) |
| SE (1) | SE437313B (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH634442A5 (de) * | 1978-11-15 | 1983-01-31 | Bbc Brown Boveri & Cie | Lichtzuendbarer thyristor. |
| US4261001A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity |
| US4261000A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | High voltage semiconductor device having an improved dv/dt capability |
| JPS583283A (ja) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | サイリスタ |
| US4633282A (en) * | 1982-10-04 | 1986-12-30 | Rockwell International Corporation | Metal-semiconductor field-effect transistor with a partial p-type drain |
| EP0108874B1 (de) * | 1982-11-15 | 1987-11-25 | Kabushiki Kaisha Toshiba | Durch Strahlung steuerbarer Thyristor |
| FR2542148B1 (fr) * | 1983-03-01 | 1986-12-05 | Telemecanique Electrique | Circuit de commande d'un dispositif a semi-conducteur sensible du type thyristor ou triac, avec impedance d'assistance a l'auto-allumage et son application a la realisation d'un montage commutateur associant un thyristor sensible a un thyristor moins sensible |
| FR2718899B1 (fr) * | 1994-04-14 | 1996-07-12 | Sgs Thomson Microelectronics | Indicateur de défaut d'un composant de protection. |
| US6339249B1 (en) * | 1998-10-14 | 2002-01-15 | Infineon Technologies Ag | Semiconductor diode |
| US9142692B2 (en) * | 2012-07-23 | 2015-09-22 | Bae Systems Information And Electronic Systems Integration Inc. | Thyristor-based, dual-polarity blocking photo-conductive semiconductor switch (PCSS) for short pulse switching and methods |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2549563C2 (de) * | 1975-11-05 | 1983-07-14 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Lichtzündbarer Thyristor |
| US4122480A (en) * | 1975-11-05 | 1978-10-24 | Licentia Patent-Verwaltungs-G.M.B.H. | Light fired thyristor with faulty firing protection |
-
1977
- 1977-08-31 DE DE2739187A patent/DE2739187C2/de not_active Expired
-
1978
- 1978-08-25 SE SE7809003A patent/SE437313B/sv not_active IP Right Cessation
- 1978-08-30 US US05/937,975 patent/US4208669A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4208669A (en) | 1980-06-17 |
| DE2739187A1 (de) | 1979-03-15 |
| SE7809003L (sv) | 1979-03-01 |
| DE2739187C2 (de) | 1981-10-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |
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