SE437309B - Forfarande for framstellning av ett halvledarelement i stand att utherda hoga spenningar - Google Patents

Forfarande for framstellning av ett halvledarelement i stand att utherda hoga spenningar

Info

Publication number
SE437309B
SE437309B SE7800782A SE7800782A SE437309B SE 437309 B SE437309 B SE 437309B SE 7800782 A SE7800782 A SE 7800782A SE 7800782 A SE7800782 A SE 7800782A SE 437309 B SE437309 B SE 437309B
Authority
SE
Sweden
Prior art keywords
procedure
preparation
semiconductor element
high voltages
understand high
Prior art date
Application number
SE7800782A
Other languages
English (en)
Swedish (sv)
Other versions
SE7800782L (sv
Inventor
N Momma
H Taniguchi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SE7800782L publication Critical patent/SE7800782L/xx
Publication of SE437309B publication Critical patent/SE437309B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
SE7800782A 1977-01-24 1978-01-23 Forfarande for framstellning av ett halvledarelement i stand att utherda hoga spenningar SE437309B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52005787A JPS5942989B2 (ja) 1977-01-24 1977-01-24 高耐圧半導体素子およびその製造方法

Publications (2)

Publication Number Publication Date
SE7800782L SE7800782L (sv) 1978-07-25
SE437309B true SE437309B (sv) 1985-02-18

Family

ID=11620802

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7800782A SE437309B (sv) 1977-01-24 1978-01-23 Forfarande for framstellning av ett halvledarelement i stand att utherda hoga spenningar

Country Status (5)

Country Link
US (1) US4402001A (de)
JP (1) JPS5942989B2 (de)
CA (1) CA1111571A (de)
DE (1) DE2802727C2 (de)
SE (1) SE437309B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624972A (en) * 1979-08-07 1981-03-10 Mitsubishi Electric Corp Thyristor
FR2535901A1 (fr) * 1982-11-10 1984-05-11 Silicium Semiconducteur Ssc Thyristor asymetrique a forte tenue en tension inverse
GB2135118B (en) * 1983-02-09 1986-10-08 Westinghouse Brake & Signal Thyristors
DE3478539D1 (en) * 1984-03-30 1989-07-06 Siemens Ag Semiconductor device controlled by field effect
EP0283788A1 (de) * 1987-03-09 1988-09-28 Siemens Aktiengesellschaft Abschaltbares Leistungshalbleiterbauelement
JPS63269574A (ja) * 1987-04-27 1988-11-07 Mitsubishi Electric Corp 半導体素子
EP0303046B1 (de) * 1987-08-11 1992-01-02 BBC Brown Boveri AG Gate-Turn-Off-Thyristor
JP4129106B2 (ja) * 1999-10-27 2008-08-06 三菱電機株式会社 半導体装置
FR2815471B1 (fr) 2000-10-12 2003-02-07 St Microelectronics Sa Composant vertical a tenue en tension elevee
JP2002305304A (ja) * 2001-04-05 2002-10-18 Toshiba Corp 電力用半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL249774A (de) * 1959-03-26
NL275313A (de) * 1961-05-10
US3258371A (en) * 1962-02-01 1966-06-28 Semiconductor Res Found Silicon semiconductor device for high frequency, and method of its manufacture
US3362858A (en) * 1963-01-04 1968-01-09 Westinghouse Electric Corp Fabrication of semiconductor controlled rectifiers
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3363151A (en) * 1964-07-09 1968-01-09 Transitron Electronic Corp Means for forming planar junctions and devices
US3338758A (en) * 1964-12-31 1967-08-29 Fairchild Camera Instr Co Surface gradient protected high breakdown junctions
DE1489694B2 (de) * 1965-07-10 1971-09-02 Brown, Boven & Cie AG, 6800 Mann heim Verfahren zum herstellen eines halbleiterbauelementes mit gestoerten kristallschichten an der oberflaeche
US3427515A (en) * 1966-06-27 1969-02-11 Rca Corp High voltage semiconductor transistor
DE1614410B2 (de) * 1967-01-25 1973-12-13 Siemens Ag, 1000 Berlin U. 8000 Muenchen Halbleiterbauelement
GB1209313A (en) * 1967-04-11 1970-10-21 Lucas Industries Ltd HIGH VOLTAGE n-p-n TRANSISTORS
US3486950A (en) * 1967-04-26 1969-12-30 Motorola Inc Localized control of carrier lifetimes in p-n junction devices and integrated circuits
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
US3777227A (en) * 1972-08-21 1973-12-04 Westinghouse Electric Corp Double diffused high voltage, high current npn transistor
CH580339A5 (de) * 1974-12-23 1976-09-30 Bbc Brown Boveri & Cie

Also Published As

Publication number Publication date
JPS5391586A (en) 1978-08-11
CA1111571A (en) 1981-10-27
DE2802727C2 (de) 1982-05-27
DE2802727A1 (de) 1978-08-03
JPS5942989B2 (ja) 1984-10-18
US4402001A (en) 1983-08-30
SE7800782L (sv) 1978-07-25

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