FR2815471B1 - Composant vertical a tenue en tension elevee - Google Patents
Composant vertical a tenue en tension eleveeInfo
- Publication number
- FR2815471B1 FR2815471B1 FR0013077A FR0013077A FR2815471B1 FR 2815471 B1 FR2815471 B1 FR 2815471B1 FR 0013077 A FR0013077 A FR 0013077A FR 0013077 A FR0013077 A FR 0013077A FR 2815471 B1 FR2815471 B1 FR 2815471B1
- Authority
- FR
- France
- Prior art keywords
- vertical component
- high tension
- tension
- vertical
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013077A FR2815471B1 (fr) | 2000-10-12 | 2000-10-12 | Composant vertical a tenue en tension elevee |
EP01976404A EP1328978A1 (fr) | 2000-10-12 | 2001-10-11 | Composant vertical a tenue en tension elevee |
PCT/FR2001/003150 WO2002031885A1 (fr) | 2000-10-12 | 2001-10-11 | Composant vertical a tenue en tension elevee |
US10/169,852 US6967356B2 (en) | 2000-10-12 | 2001-10-11 | Vertical component with high-voltage strength |
CNB018172687A CN1220269C (zh) | 2000-10-12 | 2001-10-11 | 具有高击穿电压的立式元件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013077A FR2815471B1 (fr) | 2000-10-12 | 2000-10-12 | Composant vertical a tenue en tension elevee |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2815471A1 FR2815471A1 (fr) | 2002-04-19 |
FR2815471B1 true FR2815471B1 (fr) | 2003-02-07 |
Family
ID=8855280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0013077A Expired - Fee Related FR2815471B1 (fr) | 2000-10-12 | 2000-10-12 | Composant vertical a tenue en tension elevee |
Country Status (5)
Country | Link |
---|---|
US (1) | US6967356B2 (fr) |
EP (1) | EP1328978A1 (fr) |
CN (1) | CN1220269C (fr) |
FR (1) | FR2815471B1 (fr) |
WO (1) | WO2002031885A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2375260A (en) * | 2001-03-30 | 2002-11-06 | Nokia Corp | Processing call details records (cdrs) and reliable transferal from network elements to rating and billing systems (ccbs) |
US8093652B2 (en) * | 2002-08-28 | 2012-01-10 | Ixys Corporation | Breakdown voltage for power devices |
EP1722423B1 (fr) * | 2005-05-12 | 2016-07-06 | Ixys Corporation | Diodes stables pour utilisation en basses et hautes fréquences |
CN106716643B (zh) * | 2015-09-18 | 2020-12-22 | 新电元工业株式会社 | 半导体装置、以及半导体装置的制造方法 |
CN112614836B (zh) * | 2020-12-17 | 2021-07-30 | 南京芯舟科技有限公司 | 一种防护型半导体器件 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3362858A (en) * | 1963-01-04 | 1968-01-09 | Westinghouse Electric Corp | Fabrication of semiconductor controlled rectifiers |
JPS5942989B2 (ja) * | 1977-01-24 | 1984-10-18 | 株式会社日立製作所 | 高耐圧半導体素子およびその製造方法 |
FR2535901A1 (fr) * | 1982-11-10 | 1984-05-11 | Silicium Semiconducteur Ssc | Thyristor asymetrique a forte tenue en tension inverse |
JPS62199062A (ja) * | 1986-02-27 | 1987-09-02 | Toshiba Corp | 半導体装置 |
DE19721365A1 (de) | 1997-05-22 | 1998-11-26 | Asea Brown Boveri | Beidseitig steuerbarer Thyristor |
FR2797524B1 (fr) * | 1999-08-09 | 2001-10-12 | St Microelectronics Sa | Commutateur statique bidirectionnel sensible |
FR2808621B1 (fr) * | 2000-05-05 | 2002-07-19 | St Microelectronics Sa | Composant monolithique a commande unique pour un pont mixte |
-
2000
- 2000-10-12 FR FR0013077A patent/FR2815471B1/fr not_active Expired - Fee Related
-
2001
- 2001-10-11 US US10/169,852 patent/US6967356B2/en not_active Expired - Lifetime
- 2001-10-11 WO PCT/FR2001/003150 patent/WO2002031885A1/fr active Application Filing
- 2001-10-11 EP EP01976404A patent/EP1328978A1/fr not_active Withdrawn
- 2001-10-11 CN CNB018172687A patent/CN1220269C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1470074A (zh) | 2004-01-21 |
FR2815471A1 (fr) | 2002-04-19 |
WO2002031885A1 (fr) | 2002-04-18 |
US6967356B2 (en) | 2005-11-22 |
CN1220269C (zh) | 2005-09-21 |
US20030141516A1 (en) | 2003-07-31 |
EP1328978A1 (fr) | 2003-07-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20060630 |