SE413216B - Sammansatt transistorkrets - Google Patents

Sammansatt transistorkrets

Info

Publication number
SE413216B
SE413216B SE7601729A SE7601729A SE413216B SE 413216 B SE413216 B SE 413216B SE 7601729 A SE7601729 A SE 7601729A SE 7601729 A SE7601729 A SE 7601729A SE 413216 B SE413216 B SE 413216B
Authority
SE
Sweden
Prior art keywords
transistor circuit
composite transistor
composite
circuit
transistor
Prior art date
Application number
SE7601729A
Other languages
English (en)
Swedish (sv)
Other versions
SE7601729L (sv
Inventor
Jr O H Schade
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE7601729L publication Critical patent/SE7601729L/xx
Publication of SE413216B publication Critical patent/SE413216B/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45278—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
    • H03F3/45282—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45344—At least one of the AAC sub-circuits being a current mirror
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45352—Indexing scheme relating to differential amplifiers the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45374—Indexing scheme relating to differential amplifiers the AAC comprising one or more discrete resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45674—Indexing scheme relating to differential amplifiers the LC comprising one current mirror

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
SE7601729A 1975-02-24 1976-02-17 Sammansatt transistorkrets SE413216B (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB7659/75A GB1518961A (en) 1975-02-24 1975-02-24 Amplifier circuits
US64482175A 1975-12-29 1975-12-29

Publications (2)

Publication Number Publication Date
SE7601729L SE7601729L (sv) 1976-08-25
SE413216B true SE413216B (sv) 1980-04-28

Family

ID=26241579

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7601729A SE413216B (sv) 1975-02-24 1976-02-17 Sammansatt transistorkrets

Country Status (9)

Country Link
US (2) US4092612A (ja)
JP (1) JPS558841B2 (ja)
AU (1) AU498657B2 (ja)
CA (1) CA1078469A (ja)
DE (1) DE2607420C3 (ja)
FR (1) FR2301962A1 (ja)
GB (1) GB1518961A (ja)
NL (1) NL7601806A (ja)
SE (1) SE413216B (ja)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4117416A (en) * 1977-11-28 1978-09-26 Rca Corporation Current mirror amplifiers with programmable current gains
JPS6038047B2 (ja) * 1977-12-09 1985-08-29 日本電気株式会社 トランジスタ回路
US4177416A (en) * 1978-03-09 1979-12-04 Motorola, Inc. Monolithic current supplies having high output impedances
US4236119A (en) * 1978-09-11 1980-11-25 Tektronix, Inc. Monolithic wideband amplifier
US4216393A (en) * 1978-09-25 1980-08-05 Rca Corporation Drive circuit for controlling current output rise and fall times
US4188588A (en) * 1978-12-15 1980-02-12 Rca Corporation Circuitry with unbalanced long-tailed-pair connections of FET's
JPS55107307A (en) * 1979-02-08 1980-08-18 Pioneer Electronic Corp Transistor circuit
US4335360A (en) * 1979-11-23 1982-06-15 Hoover Merle V Class AB push-pull amplifiers
NL8001120A (nl) * 1980-02-25 1981-09-16 Philips Nv Differentiele belastingsschakeling uitgevoerd met veldeffecttransistoren.
US4361816A (en) * 1980-06-30 1982-11-30 Rca Corporation Current mirror amplifiers with programmable gain
US4353036A (en) * 1980-08-29 1982-10-05 Rca Corporation Field effect transistor amplifier with variable gain control
FR2505102B1 (fr) * 1981-04-29 1986-01-24 Radiotechnique Compelec Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
US4471320A (en) * 1981-05-27 1984-09-11 Frey Douglas R Voltage controlled element
JPS57196981U (ja) * 1981-06-11 1982-12-14
JPS58215815A (ja) * 1982-06-09 1983-12-15 Toshiba Corp コンパレ−タ回路
US4550291A (en) * 1983-10-03 1985-10-29 Burr-Brown Corporation Noise-free, die area efficient cascode circuit
JPH0752552Y2 (ja) * 1989-10-06 1995-11-29 富士電機冷機株式会社 電照板の照明装置
JPH08293744A (ja) * 1995-04-21 1996-11-05 Mitsubishi Electric Corp 半導体回路
US7332965B2 (en) * 2006-04-19 2008-02-19 Texas Instruments Incorporated Gate leakage insensitive current mirror circuit

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3135926A (en) * 1960-09-19 1964-06-02 Gen Motors Corp Composite field effect transistor
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3569747A (en) * 1965-07-14 1971-03-09 Kistler Instr Corp Piezoelectric transducer
US3431508A (en) * 1966-03-16 1969-03-04 Honeywell Inc Ph detecting device using temperature compensated field-effect transistor differential amplifier
GB1234759A (en) * 1967-12-13 1971-06-09 Pressac Ltd Contact bearing devices for securing to a board or the like having printed or like circuitry
US3588672A (en) * 1968-02-08 1971-06-28 Tektronix Inc Current regulator controlled by voltage across semiconductor junction device
DE1943841B2 (de) 1969-08-28 1973-08-02 Siemens AG, 1000 Berlin u. 8000 München Schaltungsanordnung fuer eine integrierbare phasenumkehrstufe
GB1257943A (ja) * 1969-09-19 1971-12-22
US3668541A (en) * 1970-03-23 1972-06-06 Teledyne Inc Current compensator circuit
US3717821A (en) * 1972-02-11 1973-02-20 Rca Corp Circuit for minimizing the signal currents drawn by the input stage of an amplifier
JPS4929744A (ja) * 1972-07-18 1974-03-16
US3840829A (en) * 1973-02-02 1974-10-08 E Hochmair Integrated p-channel mos gyrator
US3813595A (en) * 1973-03-30 1974-05-28 Rca Corp Current source
US3863169A (en) * 1974-01-18 1975-01-28 Rca Corp Composite transistor circuit
US3903479A (en) * 1974-01-24 1975-09-02 Rca Corp Transistor base biasing using semiconductor junctions
US3925718A (en) * 1974-11-26 1975-12-09 Rca Corp Current mirror and degenerative amplifier

Also Published As

Publication number Publication date
AU1121176A (en) 1977-09-01
JPS558841B2 (ja) 1980-03-06
DE2607420B2 (de) 1979-02-08
GB1518961A (en) 1978-07-26
USRE31263E (en) 1983-05-31
FR2301962A1 (fr) 1976-09-17
SE7601729L (sv) 1976-08-25
AU498657B2 (en) 1979-03-22
FR2301962B1 (ja) 1981-12-31
CA1078469A (en) 1980-05-27
US4092612A (en) 1978-05-30
NL7601806A (nl) 1976-08-26
DE2607420C3 (de) 1986-07-10
JPS51109754A (ja) 1976-09-28
DE2607420A1 (de) 1976-08-26

Similar Documents

Publication Publication Date Title
FR2336801A1 (fr) Circuit integre
DK479576A (da) Transistortendingskredslob
AT359316B (de) Anschlussschaltung
AT348114B (de) Krankenstuhl
BR7601061A (pt) Prendedor
SE413216B (sv) Sammansatt transistorkrets
FR2335052A1 (fr) Circuit integre
SE417237B (sv) Sekring for lasring
AT360867B (de) Mehrlagige garnitur
SE7613319L (sv) Krets
SE409795B (sv) Kopplingskrets
NL188724C (nl) Transistorinvertorschakeling.
NL189892C (nl) Transistorinvertorschakeling.
FR2317868A1 (fr) Moissonneuse
NL7603827A (nl) Geintegreerde schakeling.
DK143991C (da) Mejetaersker
AT336930B (de) Integrierte schaltung
ATA373975A (de) Bauelement
NL7510276A (nl) Elektronenmikroskoop.
TR19151A (tr) Transistor devresi
JPS51100390A (ja) Setsudantoishi
ATA639975A (de) Bauelement
DK142301C (da) Mejetaersker
AT336929B (de) Integrierte schaltung
TR19095A (tr) Entegre baglanti devresi

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 7601729-2

Effective date: 19910911

Format of ref document f/p: F