SE407720B - Medelst ljus styrbar tyristor - Google Patents

Medelst ljus styrbar tyristor

Info

Publication number
SE407720B
SE407720B SE7513873A SE7513873A SE407720B SE 407720 B SE407720 B SE 407720B SE 7513873 A SE7513873 A SE 7513873A SE 7513873 A SE7513873 A SE 7513873A SE 407720 B SE407720 B SE 407720B
Authority
SE
Sweden
Prior art keywords
medium light
light controllable
controllable thyristor
thyristor
medium
Prior art date
Application number
SE7513873A
Other languages
English (en)
Other versions
SE7513873L (sv
Inventor
P Voss
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7513873L publication Critical patent/SE7513873L/sv
Publication of SE407720B publication Critical patent/SE407720B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
SE7513873A 1974-12-10 1975-12-09 Medelst ljus styrbar tyristor SE407720B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2458401A DE2458401C2 (de) 1974-12-10 1974-12-10 Mit Licht steuerbarer Thyristor

Publications (2)

Publication Number Publication Date
SE7513873L SE7513873L (sv) 1976-06-11
SE407720B true SE407720B (sv) 1979-04-09

Family

ID=5933065

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7513873A SE407720B (sv) 1974-12-10 1975-12-09 Medelst ljus styrbar tyristor

Country Status (6)

Country Link
US (1) US4001865A (sv)
JP (1) JPS5823751B2 (sv)
CA (1) CA1053354A (sv)
DE (1) DE2458401C2 (sv)
GB (1) GB1521107A (sv)
SE (1) SE407720B (sv)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU793421A3 (ru) * 1976-06-02 1980-12-30 Ббц Аг Браун Фототиристор
DE2715482C2 (de) * 1977-04-06 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
US4812892A (en) * 1978-03-30 1989-03-14 Siemens Aktiengesellschaft Light controllable thyristors
DE3268107D1 (en) * 1981-06-30 1986-02-06 Toshiba Kk Thyristor
JPS583282A (ja) * 1981-06-30 1983-01-10 Toshiba Corp サイリスタ
JPS5856463A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 光付勢半導装置
JPS58101460A (ja) * 1981-12-11 1983-06-16 Mitsubishi Electric Corp 光トリガ・サイリスタ
US4633282A (en) * 1982-10-04 1986-12-30 Rockwell International Corporation Metal-semiconductor field-effect transistor with a partial p-type drain
JPS5989462A (ja) * 1982-11-15 1984-05-23 Toshiba Corp サイリスタ
JPS59124160A (ja) * 1982-12-29 1984-07-18 Fuji Electric Corp Res & Dev Ltd 光サイリスタ
US4831248A (en) * 1987-08-07 1989-05-16 Center For Innovative Technology Electron beam controlled bulk semiconductor switch with cathodoluminescent electron activation
US4825061A (en) * 1987-08-07 1989-04-25 Center For Innovative Technology Optically controlled bulk semiconductor switch not requiring radiation to sustain conduction
EP0304032B1 (de) * 1987-08-20 1993-01-27 Siemens Aktiengesellschaft Lichtsteuerbarer Thyristor
JP3177971B2 (ja) * 1999-01-25 2001-06-18 日本電気株式会社 抵抗素子を有する半導体装置
CN102227005B (zh) * 2011-06-10 2012-07-04 中国科学院半导体研究所 具有红外响应的表面纳米点硅光电探测器结构的制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE311701B (sv) * 1966-07-07 1969-06-23 Asea Ab
JPS508315B1 (sv) * 1970-02-20 1975-04-03
JPS4817634U (sv) * 1971-07-06 1973-02-28
US3893153A (en) * 1974-01-10 1975-07-01 Westinghouse Electric Corp Light activated thyristor with high di/dt capability

Also Published As

Publication number Publication date
SE7513873L (sv) 1976-06-11
US4001865A (en) 1977-01-04
JPS5183784A (sv) 1976-07-22
DE2458401C2 (de) 1982-06-24
DE2458401A1 (de) 1976-06-16
GB1521107A (en) 1978-08-09
JPS5823751B2 (ja) 1983-05-17
CA1053354A (en) 1979-04-24

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