SE402378B - Bipoler transistor i ett halvledarskikt som er epitaktiskt anordnat pa ett isolerande substrat och forfarande for dess framstellning - Google Patents
Bipoler transistor i ett halvledarskikt som er epitaktiskt anordnat pa ett isolerande substrat och forfarande for dess framstellningInfo
- Publication number
- SE402378B SE402378B SE7501090A SE7501090A SE402378B SE 402378 B SE402378 B SE 402378B SE 7501090 A SE7501090 A SE 7501090A SE 7501090 A SE7501090 A SE 7501090A SE 402378 B SE402378 B SE 402378B
- Authority
- SE
- Sweden
- Prior art keywords
- epitacticly
- bipoles
- transistor
- procedure
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76289—Lateral isolation by air gap
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/466,287 US3943555A (en) | 1974-05-02 | 1974-05-02 | SOS Bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE7501090L SE7501090L (sv) | 1975-11-03 |
| SE402378B true SE402378B (sv) | 1978-06-26 |
Family
ID=23851202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7501090A SE402378B (sv) | 1974-05-02 | 1975-01-31 | Bipoler transistor i ett halvledarskikt som er epitaktiskt anordnat pa ett isolerande substrat och forfarande for dess framstellning |
Country Status (13)
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3994012A (en) * | 1975-05-07 | 1976-11-23 | The Regents Of The University Of Minnesota | Photovoltaic semi-conductor devices |
| DE2529951A1 (de) * | 1975-07-04 | 1977-01-27 | Siemens Ag | Lateraler, bipolarer transistor |
| DD154049A1 (de) * | 1980-10-30 | 1982-02-17 | Siegfried Wagner | Steuerbares halbleiterbauelement |
| US4804634A (en) * | 1981-04-24 | 1989-02-14 | National Semiconductor Corporation | Integrated circuit lateral transistor structure |
| US4575746A (en) * | 1983-11-28 | 1986-03-11 | Rca Corporation | Crossunders for high density SOS integrated circuits |
| US4792837A (en) * | 1986-02-26 | 1988-12-20 | Ge Solid State Patents, Inc. | Orthogonal bipolar transistor |
| JP2503460B2 (ja) * | 1986-12-01 | 1996-06-05 | 三菱電機株式会社 | バイポ−ラトランジスタおよびその製造方法 |
| JPS63312674A (ja) * | 1987-06-16 | 1988-12-21 | Nissan Motor Co Ltd | 薄膜半導体装置 |
| US5068205A (en) * | 1989-05-26 | 1991-11-26 | General Signal Corporation | Header mounted chemically sensitive ISFET and method of manufacture |
| USH1637H (en) * | 1991-09-18 | 1997-03-04 | Offord; Bruce W. | Laser-assisted fabrication of bipolar transistors in silicon-on-sapphire (SOS) |
| US5374567A (en) * | 1993-05-20 | 1994-12-20 | The United States Of America As Represented By The Secretary Of The Navy | Operational amplifier using bipolar junction transistors in silicon-on-sapphire |
| DE4418206C2 (de) * | 1994-05-25 | 1999-01-14 | Siemens Ag | CMOS-kompatibler Bipolartransistor und Herstellungsverfahren desselben |
| US5894152A (en) * | 1997-06-18 | 1999-04-13 | International Business Machines Corporation | SOI/bulk hybrid substrate and method of forming the same |
| US6404038B1 (en) | 2000-03-02 | 2002-06-11 | The United States Of America As Represented By The Secretary Of The Navy | Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors |
| US8026572B2 (en) * | 2006-12-06 | 2011-09-27 | Denso Corporation | Semiconductor device and method for manufacturing same |
| CN112599534A (zh) * | 2020-12-08 | 2021-04-02 | 深圳市华星光电半导体显示技术有限公司 | 一种背板组件、制程方法和显示装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3383567A (en) * | 1965-09-15 | 1968-05-14 | Ion Physics Corp | Solid state translating device comprising irradiation implanted conductivity ions |
| US3486892A (en) * | 1966-01-13 | 1969-12-30 | Raytheon Co | Preferential etching technique |
| NL6813833A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1968-09-27 | 1970-04-01 | ||
| US3567508A (en) * | 1968-10-31 | 1971-03-02 | Gen Electric | Low temperature-high vacuum contact formation process |
| US3666548A (en) * | 1970-01-06 | 1972-05-30 | Ibm | Monocrystalline semiconductor body having dielectrically isolated regions and method of forming |
| GB1307546A (en) * | 1970-05-22 | 1973-02-21 | Mullard Ltd | Methods of manufacturing semiconductor devices |
| US3660732A (en) * | 1971-02-08 | 1972-05-02 | Signetics Corp | Semiconductor structure with dielectric and air isolation and method |
| JPS4924583A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-06-28 | 1974-03-05 | ||
| US3890632A (en) * | 1973-12-03 | 1975-06-17 | Rca Corp | Stabilized semiconductor devices and method of making same |
-
1974
- 1974-05-02 US US05/466,287 patent/US3943555A/en not_active Expired - Lifetime
- 1974-12-11 IN IN2721/CAL/74A patent/IN143903B/en unknown
- 1974-12-23 NL NL7416779A patent/NL7416779A/xx not_active Application Discontinuation
-
1975
- 1975-01-13 IT IT19215/75A patent/IT1028325B/it active
- 1975-01-23 DE DE19752502547 patent/DE2502547A1/de active Pending
- 1975-01-27 FR FR7502431A patent/FR2269791A1/fr not_active Withdrawn
- 1975-01-28 GB GB3736/75A patent/GB1494151A/en not_active Expired
- 1975-01-28 BE BE152802A patent/BE824887A/xx unknown
- 1975-01-30 JP JP50013299A patent/JPS5133569A/ja active Pending
- 1975-01-31 CH CH117275A patent/CH591162A5/xx not_active IP Right Cessation
- 1975-01-31 SE SE7501090A patent/SE402378B/xx unknown
- 1975-03-18 CA CA222,356A patent/CA1024267A/en not_active Expired
- 1975-04-25 BR BR3193/75A patent/BR7502515A/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IT1028325B (it) | 1979-01-30 |
| IN143903B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-02-25 |
| FR2269791A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-11-28 |
| CH591162A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1977-09-15 |
| NL7416779A (nl) | 1975-11-04 |
| BR7502515A (pt) | 1976-03-16 |
| SE7501090L (sv) | 1975-11-03 |
| JPS5133569A (en) | 1976-03-22 |
| BE824887A (fr) | 1975-05-15 |
| GB1494151A (en) | 1977-12-07 |
| DE2502547A1 (de) | 1975-11-13 |
| US3943555A (en) | 1976-03-09 |
| CA1024267A (en) | 1978-01-10 |
| AU7633374A (en) | 1976-06-17 |
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