SE398941B - Halvledardon avsett att minimera stromdiffusion av minoritetsladdningsberare fran bas till emitter under tillstand med forspenning i ledriktningen - Google Patents

Halvledardon avsett att minimera stromdiffusion av minoritetsladdningsberare fran bas till emitter under tillstand med forspenning i ledriktningen

Info

Publication number
SE398941B
SE398941B SE7317519A SE7317519A SE398941B SE 398941 B SE398941 B SE 398941B SE 7317519 A SE7317519 A SE 7317519A SE 7317519 A SE7317519 A SE 7317519A SE 398941 B SE398941 B SE 398941B
Authority
SE
Sweden
Prior art keywords
semiconductor device
base
charge carriers
device intended
current diffusion
Prior art date
Application number
SE7317519A
Other languages
English (en)
Swedish (sv)
Inventor
H Yagi
T Tsuyuki
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SE398941B publication Critical patent/SE398941B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
SE7317519A 1972-12-29 1973-12-28 Halvledardon avsett att minimera stromdiffusion av minoritetsladdningsberare fran bas till emitter under tillstand med forspenning i ledriktningen SE398941B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48000551A JPS5147584B2 (en。) 1972-12-29 1972-12-29

Publications (1)

Publication Number Publication Date
SE398941B true SE398941B (sv) 1978-01-23

Family

ID=11476845

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7317519A SE398941B (sv) 1972-12-29 1973-12-28 Halvledardon avsett att minimera stromdiffusion av minoritetsladdningsberare fran bas till emitter under tillstand med forspenning i ledriktningen

Country Status (14)

Country Link
JP (1) JPS5147584B2 (en。)
BE (1) BE809217A (en。)
BR (1) BR7310282D0 (en。)
CA (1) CA1006624A (en。)
CH (1) CH570047A5 (en。)
DE (1) DE2364753C2 (en。)
DK (1) DK138248C (en。)
ES (1) ES421873A1 (en。)
FR (1) FR2212644B1 (en。)
GB (1) GB1455260A (en。)
IT (1) IT1002416B (en。)
NL (1) NL182764C (en。)
NO (1) NO140843C (en。)
SE (1) SE398941B (en。)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5754969B2 (en。) * 1974-04-04 1982-11-20
JPS5753672B2 (en。) * 1974-04-10 1982-11-13
JPS57658B2 (en。) * 1974-04-16 1982-01-07
JPS5714064B2 (en。) * 1974-04-25 1982-03-20
JPS5648983B2 (en。) * 1974-05-10 1981-11-19
JPS5718710B2 (en。) * 1974-05-10 1982-04-17
JPS5426789Y2 (en。) * 1974-07-23 1979-09-03
GB2130006A (en) * 1982-10-27 1984-05-23 Vladimir Avraamovic Smolyansky Bipolar semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE547227A (en。) * 1955-04-21
US2806983A (en) * 1956-06-01 1957-09-17 Gen Electric Remote base transistor
NL242787A (en。) * 1958-09-05
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing

Also Published As

Publication number Publication date
BR7310282D0 (pt) 1974-08-15
CA1006624A (en) 1977-03-08
NO140843C (no) 1979-11-21
FR2212644B1 (en。) 1976-10-08
NL7317814A (en。) 1974-07-02
CH570047A5 (en。) 1975-11-28
GB1455260A (en) 1976-11-10
IT1002416B (it) 1976-05-20
FR2212644A1 (en。) 1974-07-26
DK138248B (da) 1978-07-31
DK138248C (da) 1979-01-08
BE809217A (fr) 1974-04-16
NL182764B (nl) 1987-12-01
DE2364753A1 (de) 1974-07-18
AU6378773A (en) 1975-06-19
NL182764C (nl) 1988-05-02
JPS5147584B2 (en。) 1976-12-15
DE2364753C2 (de) 1984-01-12
NO140843B (no) 1979-08-13
ES421873A1 (es) 1976-08-01
JPS4991192A (en。) 1974-08-30

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