Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
  • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/67—Thin-film transistors [TFT]
  • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
  • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
  • H10D30/6738—Schottky barrier electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/67—Thin-film transistors [TFT]
  • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
  • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/80—FETs having rectifying junction gate electrodes
  • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
  • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
  • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D64/00—Electrodes of devices having potential barriers
  • H10D64/01—Manufacture or treatment
  • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
  • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D64/00—Electrodes of devices having potential barriers
  • H10D64/60—Electrodes characterised by their materials
  • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D8/00—Diodes
  • H10D8/60—Schottky-barrier diodes 
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
  • G11C2213/30—Resistive cell, memory material aspects
  • G11C2213/33—Material including silicon
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
  • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Applications Claiming Priority (1)

Publications (1)

Family

ID=4398777

Family Applications (1)

Country Status (13)

Families Citing this family (14)

Family Cites Families (3)

• 1971
  • 1971-09-30 CH CH1420171A patent/CH539360A/de not_active IP Right Cessation
• 1972
  • 1972-07-19 NL NL7209934A patent/NL7209934A/xx not_active Application Discontinuation
  • 1972-07-20 DE DE2235465A patent/DE2235465C3/de not_active Expired
  • 1972-08-25 JP JP8466472A patent/JPS5619114B2/ja not_active Expired
  • 1972-09-01 IL IL40282A patent/IL40282A/xx unknown
  • 1972-09-05 GB GB4108172A patent/GB1394183A/en not_active Expired
  • 1972-09-08 IT IT28933/72A patent/IT967244B/it active
  • 1972-09-12 FR FR7233370A patent/FR2154538B1/fr not_active Expired
  • 1972-09-14 SE SE7211839A patent/SE384599B/xx unknown
  • 1972-09-26 US US00292475A patent/US3810128A/en not_active Expired - Lifetime
  • 1972-09-27 CA CA152,609A patent/CA971289A/en not_active Expired
  • 1972-09-29 ES ES407127A patent/ES407127A1/es not_active Expired
  • 1972-09-29 HU HUIE535A patent/HU165367B/hu unknown

Also Published As

Similar Documents