SE379879C - Programmerbart permanentminne samt forfarande for framstellning av detsamma - Google Patents

Programmerbart permanentminne samt forfarande for framstellning av detsamma

Info

Publication number
SE379879C
SE379879C SE7106057A SE605771A SE379879C SE 379879 C SE379879 C SE 379879C SE 7106057 A SE7106057 A SE 7106057A SE 605771 A SE605771 A SE 605771A SE 379879 C SE379879 C SE 379879C
Authority
SE
Sweden
Prior art keywords
preparing
procedure
same
permanent memory
programmable permanent
Prior art date
Application number
SE7106057A
Other languages
English (en)
Swedish (sv)
Other versions
SE379879B (enExample
Inventor
U Burker
S Koch
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE379879B publication Critical patent/SE379879B/xx
Publication of SE379879C publication Critical patent/SE379879C/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W20/021—
    • H10W20/49—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead
SE7106057A 1970-05-12 1971-05-10 Programmerbart permanentminne samt forfarande for framstellning av detsamma SE379879C (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2023219A DE2023219C3 (de) 1970-05-12 1970-05-12 Programmierbarer Halbleiter-Festwertspeicher

Publications (2)

Publication Number Publication Date
SE379879B SE379879B (enExample) 1975-10-20
SE379879C true SE379879C (sv) 1978-10-02

Family

ID=5770900

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7106057A SE379879C (sv) 1970-05-12 1971-05-10 Programmerbart permanentminne samt forfarande for framstellning av detsamma

Country Status (10)

Country Link
US (1) US3781825A (enExample)
JP (1) JPS5620637B1 (enExample)
AT (1) AT314229B (enExample)
CA (1) CA958123A (enExample)
CH (1) CH531773A (enExample)
DE (1) DE2023219C3 (enExample)
FR (1) FR2088515B1 (enExample)
GB (1) GB1312171A (enExample)
NL (1) NL7106319A (enExample)
SE (1) SE379879C (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931492A (en) * 1972-06-19 1976-01-06 Nippon Telegraph And Telephone Public Corporation Thermal print head
US3769559A (en) * 1972-06-21 1973-10-30 Ibm Non-volatile storage element
US3877050A (en) * 1973-08-27 1975-04-08 Signetics Corp Integrated circuit having guard ring schottky barrier diode and method
US4035907A (en) * 1973-08-27 1977-07-19 Signetics Corporation Integrated circuit having guard ring Schottky barrier diode and method
FR2404895A1 (fr) * 1977-09-30 1979-04-27 Radiotechnique Compelec Cellule de memoire programmable a diodes semiconductrices
NL7713051A (nl) * 1977-11-28 1979-05-30 Philips Nv Halfgeleiderinrichting met een permanent geheu- gen en werkwijze ter vervaardiging van een der- gelijke halfgeleiderinrichting.
DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
FR2471023A1 (fr) * 1979-12-07 1981-06-12 Ibm France Reseau matriciel d'elements semi-conducteurs
NL8002635A (nl) * 1980-05-08 1981-12-01 Philips Nv Programmeerbare halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
FR2490860B1 (fr) * 1980-09-24 1986-11-28 Nippon Telegraph & Telephone Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit
US4412308A (en) * 1981-06-15 1983-10-25 International Business Machines Corporation Programmable bipolar structures
US4403399A (en) * 1981-09-28 1983-09-13 Harris Corporation Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking
FR2520146A1 (fr) * 1982-01-15 1983-07-22 Thomson Csf Matrice d'elements a memoire integres, a diode schottky sur silicium polycristallin, et procede de fabrication
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US4849365A (en) * 1988-02-16 1989-07-18 Honeywell Inc. Selective integrated circuit interconnection
JPH01127808U (enExample) * 1988-02-23 1989-08-31
US7111290B1 (en) 1999-01-28 2006-09-19 Ati International Srl Profiling program execution to identify frequently-executed portions and to assist binary translation
GB2450037B (en) * 2004-03-30 2009-05-27 Texas Instruments Inc Schottky diode
US6972470B2 (en) 2004-03-30 2005-12-06 Texas Instruments Incorporated Dual metal Schottky diode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245051A (en) * 1960-11-16 1966-04-05 John H Robb Information storage matrices
DE1764378C3 (de) * 1967-05-30 1973-12-20 Honeywell Information Systems Italia S.P.A., Caluso, Turin (Italien) Integrierte Randschichtdiodenmatrix und Verfahren zu ihrer Herstellung
US3576549A (en) * 1969-04-14 1971-04-27 Cogar Corp Semiconductor device, method, and memory array
BE755039A (fr) * 1969-09-15 1971-02-01 Ibm Memoire semi-conductrice permanente

Also Published As

Publication number Publication date
SE379879B (enExample) 1975-10-20
DE2023219A1 (de) 1971-12-02
NL7106319A (enExample) 1971-11-16
CH531773A (de) 1972-12-15
US3781825A (en) 1973-12-25
GB1312171A (en) 1973-04-04
DE2023219B2 (de) 1979-01-11
FR2088515B1 (enExample) 1976-02-06
FR2088515A1 (enExample) 1972-01-07
AT314229B (de) 1974-03-25
CA958123A (en) 1974-11-19
JPS5620637B1 (enExample) 1981-05-14
DE2023219C3 (de) 1979-09-06

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