NL7106319A - - Google Patents
Info
- Publication number
- NL7106319A NL7106319A NL7106319A NL7106319A NL7106319A NL 7106319 A NL7106319 A NL 7106319A NL 7106319 A NL7106319 A NL 7106319A NL 7106319 A NL7106319 A NL 7106319A NL 7106319 A NL7106319 A NL 7106319A
- Authority
- NL
- Netherlands
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10W20/021—
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- H10W20/49—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2023219A DE2023219C3 (de) | 1970-05-12 | 1970-05-12 | Programmierbarer Halbleiter-Festwertspeicher |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7106319A true NL7106319A (enExample) | 1971-11-16 |
Family
ID=5770900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7106319A NL7106319A (enExample) | 1970-05-12 | 1971-05-07 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3781825A (enExample) |
| JP (1) | JPS5620637B1 (enExample) |
| AT (1) | AT314229B (enExample) |
| CA (1) | CA958123A (enExample) |
| CH (1) | CH531773A (enExample) |
| DE (1) | DE2023219C3 (enExample) |
| FR (1) | FR2088515B1 (enExample) |
| GB (1) | GB1312171A (enExample) |
| NL (1) | NL7106319A (enExample) |
| SE (1) | SE379879C (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3931492A (en) * | 1972-06-19 | 1976-01-06 | Nippon Telegraph And Telephone Public Corporation | Thermal print head |
| US3769559A (en) * | 1972-06-21 | 1973-10-30 | Ibm | Non-volatile storage element |
| US3877050A (en) * | 1973-08-27 | 1975-04-08 | Signetics Corp | Integrated circuit having guard ring schottky barrier diode and method |
| US4035907A (en) * | 1973-08-27 | 1977-07-19 | Signetics Corporation | Integrated circuit having guard ring Schottky barrier diode and method |
| FR2404895A1 (fr) * | 1977-09-30 | 1979-04-27 | Radiotechnique Compelec | Cellule de memoire programmable a diodes semiconductrices |
| NL7713051A (nl) * | 1977-11-28 | 1979-05-30 | Philips Nv | Halfgeleiderinrichting met een permanent geheu- gen en werkwijze ter vervaardiging van een der- gelijke halfgeleiderinrichting. |
| DE3036869C2 (de) * | 1979-10-01 | 1985-09-05 | Hitachi, Ltd., Tokio/Tokyo | Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren |
| FR2471023A1 (fr) * | 1979-12-07 | 1981-06-12 | Ibm France | Reseau matriciel d'elements semi-conducteurs |
| NL8002635A (nl) * | 1980-05-08 | 1981-12-01 | Philips Nv | Programmeerbare halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
| FR2490860B1 (fr) * | 1980-09-24 | 1986-11-28 | Nippon Telegraph & Telephone | Dispositif semi-conducteur de memorisation programmable a lecture seule, de type a jonction en court-circuit |
| US4412308A (en) * | 1981-06-15 | 1983-10-25 | International Business Machines Corporation | Programmable bipolar structures |
| US4403399A (en) * | 1981-09-28 | 1983-09-13 | Harris Corporation | Method of fabricating a vertical fuse utilizing epitaxial deposition and special masking |
| FR2520146A1 (fr) * | 1982-01-15 | 1983-07-22 | Thomson Csf | Matrice d'elements a memoire integres, a diode schottky sur silicium polycristallin, et procede de fabrication |
| US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
| US4849365A (en) * | 1988-02-16 | 1989-07-18 | Honeywell Inc. | Selective integrated circuit interconnection |
| JPH01127808U (enExample) * | 1988-02-23 | 1989-08-31 | ||
| US7111290B1 (en) | 1999-01-28 | 2006-09-19 | Ati International Srl | Profiling program execution to identify frequently-executed portions and to assist binary translation |
| GB2450037B (en) * | 2004-03-30 | 2009-05-27 | Texas Instruments Inc | Schottky diode |
| US6972470B2 (en) | 2004-03-30 | 2005-12-06 | Texas Instruments Incorporated | Dual metal Schottky diode |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3245051A (en) * | 1960-11-16 | 1966-04-05 | John H Robb | Information storage matrices |
| DE1764378C3 (de) * | 1967-05-30 | 1973-12-20 | Honeywell Information Systems Italia S.P.A., Caluso, Turin (Italien) | Integrierte Randschichtdiodenmatrix und Verfahren zu ihrer Herstellung |
| US3576549A (en) * | 1969-04-14 | 1971-04-27 | Cogar Corp | Semiconductor device, method, and memory array |
| BE755039A (fr) * | 1969-09-15 | 1971-02-01 | Ibm | Memoire semi-conductrice permanente |
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1970
- 1970-05-12 DE DE2023219A patent/DE2023219C3/de not_active Expired
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1971
- 1971-04-16 CH CH552071A patent/CH531773A/de not_active IP Right Cessation
- 1971-04-28 AT AT366771A patent/AT314229B/de not_active IP Right Cessation
- 1971-05-07 NL NL7106319A patent/NL7106319A/xx unknown
- 1971-05-10 US US00141725A patent/US3781825A/en not_active Expired - Lifetime
- 1971-05-10 SE SE7106057A patent/SE379879C/xx unknown
- 1971-05-11 FR FR7116900A patent/FR2088515B1/fr not_active Expired
- 1971-05-11 GB GB1434771*[A patent/GB1312171A/en not_active Expired
- 1971-05-12 CA CA112,781A patent/CA958123A/en not_active Expired
- 1971-05-12 JP JP3191171A patent/JPS5620637B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE379879B (enExample) | 1975-10-20 |
| DE2023219A1 (de) | 1971-12-02 |
| CH531773A (de) | 1972-12-15 |
| US3781825A (en) | 1973-12-25 |
| GB1312171A (en) | 1973-04-04 |
| DE2023219B2 (de) | 1979-01-11 |
| SE379879C (sv) | 1978-10-02 |
| FR2088515B1 (enExample) | 1976-02-06 |
| FR2088515A1 (enExample) | 1972-01-07 |
| AT314229B (de) | 1974-03-25 |
| CA958123A (en) | 1974-11-19 |
| JPS5620637B1 (enExample) | 1981-05-14 |
| DE2023219C3 (de) | 1979-09-06 |