SE369646B - - Google Patents

Info

Publication number
SE369646B
SE369646B SE06097/70A SE609770A SE369646B SE 369646 B SE369646 B SE 369646B SE 06097/70 A SE06097/70 A SE 06097/70A SE 609770 A SE609770 A SE 609770A SE 369646 B SE369646 B SE 369646B
Authority
SE
Sweden
Application number
SE06097/70A
Inventor
J Ballwin
W Robinson
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE369646B publication Critical patent/SE369646B/xx

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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S148/00—Metal treatment
    • Y10S148/028—Dicing

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
SE06097/70A 1969-05-05 1970-05-04 SE369646B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82168869A 1969-05-05 1969-05-05

Publications (1)

Publication Number Publication Date
SE369646B true SE369646B (de) 1974-09-09

Family

ID=25234052

Family Applications (1)

Application Number Title Priority Date Filing Date
SE06097/70A SE369646B (de) 1969-05-05 1970-05-04

Country Status (7)

Country Link
US (1) US3628106A (de)
BE (1) BE749971A (de)
DE (2) DE7016645U (de)
FR (1) FR2044768B1 (de)
GB (1) GB1314267A (de)
IE (1) IE34131B1 (de)
SE (1) SE369646B (de)

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US3908187A (en) * 1973-01-02 1975-09-23 Gen Electric High voltage power transistor and method for making
US3943013A (en) * 1973-10-11 1976-03-09 General Electric Company Triac with gold diffused boundary
JPS5318380B2 (de) * 1974-06-05 1978-06-14
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture
GB1499845A (en) * 1975-03-26 1978-02-01 Mullard Ltd Thyristors
US4063272A (en) * 1975-11-26 1977-12-13 General Electric Company Semiconductor device and method of manufacture thereof
GB1563421A (en) * 1975-12-18 1980-03-26 Gen Electric Polyimide-siloxane copolymer protective coating for semiconductor devices
JPS5346285A (en) * 1976-10-08 1978-04-25 Hitachi Ltd Mesa type high breakdown voltage semiconductor device
JPS56103447A (en) * 1980-01-22 1981-08-18 Toshiba Corp Dicing method of semiconductor wafer
US4814296A (en) * 1987-08-28 1989-03-21 Xerox Corporation Method of fabricating image sensor dies for use in assembling arrays
FR2666174B1 (fr) * 1990-08-21 1997-03-21 Sgs Thomson Microelectronics Composant semiconducteur haute tension a faible courant de fuite.
US5313094A (en) * 1992-01-28 1994-05-17 International Business Machines Corportion Thermal dissipation of integrated circuits using diamond paths
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US3628106A (en) 1971-12-14
DE2021691A1 (de) 1970-11-12
FR2044768A1 (de) 1971-02-26
IE34131L (en) 1970-11-05
DE7016645U (de) 1973-11-08
IE34131B1 (en) 1975-02-19
GB1314267A (en) 1973-04-18
FR2044768B1 (de) 1974-02-01
BE749971A (fr) 1970-10-16

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