SE367513B - - Google Patents
Info
- Publication number
- SE367513B SE367513B SE08986/70A SE898670A SE367513B SE 367513 B SE367513 B SE 367513B SE 08986/70 A SE08986/70 A SE 08986/70A SE 898670 A SE898670 A SE 898670A SE 367513 B SE367513 B SE 367513B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P90/1906—
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- H10W10/061—
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- H10W10/181—
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- H10W10/051—
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- H10W10/50—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6910027.A NL161304C (nl) | 1969-07-01 | 1969-07-01 | Halfgeleiderinrichting met een laagvormig gebied en een door een isolerendelaag van het laagvormig gebied gescheiden elektrodelaag, zodat bij het aanleggen van een geschikte potentiaal op de elektrodelaag in het laagvormig gebied een uitputtingszone wordt gevormd. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE367513B true SE367513B (enExample) | 1974-05-27 |
Family
ID=19807349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE08986/70A SE367513B (enExample) | 1969-07-01 | 1970-06-29 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3678347A (enExample) |
| JP (1) | JPS4944793B1 (enExample) |
| CH (1) | CH511512A (enExample) |
| DE (1) | DE2030917C3 (enExample) |
| FR (1) | FR2050427B1 (enExample) |
| GB (1) | GB1320778A (enExample) |
| NL (1) | NL161304C (enExample) |
| SE (1) | SE367513B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA948331A (en) * | 1971-03-16 | 1974-05-28 | Michael F. Tompsett | Charge transfer imaging devices |
| JPS5214944B1 (enExample) * | 1971-06-04 | 1977-04-25 | ||
| JPS573225B2 (enExample) * | 1974-08-19 | 1982-01-20 | ||
| US4035829A (en) * | 1975-01-13 | 1977-07-12 | Rca Corporation | Semiconductor device and method of electrically isolating circuit components thereon |
| US4611220A (en) * | 1983-11-16 | 1986-09-09 | General Motors Corporation | Junction-MOS power field effect transistor |
| US4786952A (en) * | 1986-07-24 | 1988-11-22 | General Motors Corporation | High voltage depletion mode MOS power field effect transistor |
| US4769685A (en) * | 1986-10-27 | 1988-09-06 | General Motors Corporation | Recessed-gate junction-MOS field effect transistor |
| US7714352B2 (en) * | 2006-02-09 | 2010-05-11 | Nissan Motor Co., Ltd. | Hetero junction semiconductor device |
| US10700216B2 (en) | 2013-02-07 | 2020-06-30 | John Wood | Bidirectional bipolar-mode JFET driver circuitry |
| US10049884B2 (en) * | 2013-02-07 | 2018-08-14 | John Wood | Anodic etching of substrates |
| US10374070B2 (en) | 2013-02-07 | 2019-08-06 | John Wood | Bidirectional bipolar-mode JFET driver circuitry |
| US11101372B2 (en) | 2013-02-07 | 2021-08-24 | John Wood | Double-sided vertical power transistor structure |
| US10084054B2 (en) | 2016-06-03 | 2018-09-25 | Alfred I. Grayzel | Field effect transistor which can be biased to achieve a uniform depletion region |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1789084B2 (de) * | 1961-08-17 | 1973-05-30 | Rca Corp., New York, N.Y. (V.St.A.) | Duennschicht-verknuepfungsglied und verfahren zu seiner herstellung |
| US3576392A (en) * | 1968-06-26 | 1971-04-27 | Rca Corp | Semiconductor vidicon target having electronically alterable light response characteristics |
| US3560815A (en) * | 1968-10-10 | 1971-02-02 | Gen Electric | Voltage-variable capacitor with extendible pn junction region |
| US3535600A (en) * | 1968-10-10 | 1970-10-20 | Gen Electric | Mos varactor diode |
| US3566219A (en) * | 1969-01-16 | 1971-02-23 | Signetics Corp | Pinched resistor semiconductor structure |
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1969
- 1969-07-01 NL NL6910027.A patent/NL161304C/xx not_active IP Right Cessation
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1970
- 1970-06-23 DE DE2030917A patent/DE2030917C3/de not_active Expired
- 1970-06-24 US US49403A patent/US3678347A/en not_active Expired - Lifetime
- 1970-06-26 GB GB3112770A patent/GB1320778A/en not_active Expired
- 1970-06-29 SE SE08986/70A patent/SE367513B/xx unknown
- 1970-06-29 CH CH983470A patent/CH511512A/de not_active IP Right Cessation
- 1970-07-01 FR FR7024423A patent/FR2050427B1/fr not_active Expired
- 1970-07-01 JP JP45057231A patent/JPS4944793B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2050427A1 (enExample) | 1971-04-02 |
| JPS4944793B1 (enExample) | 1974-11-30 |
| NL161304B (nl) | 1979-08-15 |
| DE2030917B2 (de) | 1980-11-20 |
| DE2030917C3 (de) | 1981-07-09 |
| GB1320778A (en) | 1973-06-20 |
| NL6910027A (enExample) | 1971-01-05 |
| NL161304C (nl) | 1980-01-15 |
| FR2050427B1 (enExample) | 1976-03-19 |
| DE2030917A1 (de) | 1971-01-14 |
| CH511512A (de) | 1971-08-15 |
| US3678347A (en) | 1972-07-18 |