FR2050427B1 - - Google Patents

Info

Publication number
FR2050427B1
FR2050427B1 FR7024423A FR7024423A FR2050427B1 FR 2050427 B1 FR2050427 B1 FR 2050427B1 FR 7024423 A FR7024423 A FR 7024423A FR 7024423 A FR7024423 A FR 7024423A FR 2050427 B1 FR2050427 B1 FR 2050427B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7024423A
Other languages
French (fr)
Other versions
FR2050427A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2050427A1 publication Critical patent/FR2050427A1/fr
Application granted granted Critical
Publication of FR2050427B1 publication Critical patent/FR2050427B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P90/1906—
    • H10W10/061—
    • H10W10/181—
    • H10W10/051—
    • H10W10/50—
FR7024423A 1969-07-01 1970-07-01 Expired FR2050427B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6910027.A NL161304C (nl) 1969-07-01 1969-07-01 Halfgeleiderinrichting met een laagvormig gebied en een door een isolerendelaag van het laagvormig gebied gescheiden elektrodelaag, zodat bij het aanleggen van een geschikte potentiaal op de elektrodelaag in het laagvormig gebied een uitputtingszone wordt gevormd.

Publications (2)

Publication Number Publication Date
FR2050427A1 FR2050427A1 (enExample) 1971-04-02
FR2050427B1 true FR2050427B1 (enExample) 1976-03-19

Family

ID=19807349

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7024423A Expired FR2050427B1 (enExample) 1969-07-01 1970-07-01

Country Status (8)

Country Link
US (1) US3678347A (enExample)
JP (1) JPS4944793B1 (enExample)
CH (1) CH511512A (enExample)
DE (1) DE2030917C3 (enExample)
FR (1) FR2050427B1 (enExample)
GB (1) GB1320778A (enExample)
NL (1) NL161304C (enExample)
SE (1) SE367513B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA948331A (en) * 1971-03-16 1974-05-28 Michael F. Tompsett Charge transfer imaging devices
JPS5214944B1 (enExample) * 1971-06-04 1977-04-25
JPS573225B2 (enExample) * 1974-08-19 1982-01-20
US4035829A (en) * 1975-01-13 1977-07-12 Rca Corporation Semiconductor device and method of electrically isolating circuit components thereon
US4611220A (en) * 1983-11-16 1986-09-09 General Motors Corporation Junction-MOS power field effect transistor
US4786952A (en) * 1986-07-24 1988-11-22 General Motors Corporation High voltage depletion mode MOS power field effect transistor
US4769685A (en) * 1986-10-27 1988-09-06 General Motors Corporation Recessed-gate junction-MOS field effect transistor
US7714352B2 (en) * 2006-02-09 2010-05-11 Nissan Motor Co., Ltd. Hetero junction semiconductor device
US10700216B2 (en) 2013-02-07 2020-06-30 John Wood Bidirectional bipolar-mode JFET driver circuitry
US10049884B2 (en) * 2013-02-07 2018-08-14 John Wood Anodic etching of substrates
US10374070B2 (en) 2013-02-07 2019-08-06 John Wood Bidirectional bipolar-mode JFET driver circuitry
US11101372B2 (en) 2013-02-07 2021-08-24 John Wood Double-sided vertical power transistor structure
US10084054B2 (en) 2016-06-03 2018-09-25 Alfred I. Grayzel Field effect transistor which can be biased to achieve a uniform depletion region

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1789084B2 (de) * 1961-08-17 1973-05-30 Rca Corp., New York, N.Y. (V.St.A.) Duennschicht-verknuepfungsglied und verfahren zu seiner herstellung
US3576392A (en) * 1968-06-26 1971-04-27 Rca Corp Semiconductor vidicon target having electronically alterable light response characteristics
US3560815A (en) * 1968-10-10 1971-02-02 Gen Electric Voltage-variable capacitor with extendible pn junction region
US3535600A (en) * 1968-10-10 1970-10-20 Gen Electric Mos varactor diode
US3566219A (en) * 1969-01-16 1971-02-23 Signetics Corp Pinched resistor semiconductor structure

Also Published As

Publication number Publication date
FR2050427A1 (enExample) 1971-04-02
JPS4944793B1 (enExample) 1974-11-30
NL161304B (nl) 1979-08-15
DE2030917B2 (de) 1980-11-20
DE2030917C3 (de) 1981-07-09
GB1320778A (en) 1973-06-20
SE367513B (enExample) 1974-05-27
NL6910027A (enExample) 1971-01-05
NL161304C (nl) 1980-01-15
DE2030917A1 (de) 1971-01-14
CH511512A (de) 1971-08-15
US3678347A (en) 1972-07-18

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Legal Events

Date Code Title Description
ST Notification of lapse