SE366227B - - Google Patents

Info

Publication number
SE366227B
SE366227B SE216671A SE216671A SE366227B SE 366227 B SE366227 B SE 366227B SE 216671 A SE216671 A SE 216671A SE 216671 A SE216671 A SE 216671A SE 366227 B SE366227 B SE 366227B
Authority
SE
Sweden
Application number
SE216671A
Inventor
G Rosenberger
H Soehlbrand
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE366227B publication Critical patent/SE366227B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
SE216671A 1970-02-19 1971-02-19 SE366227B (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702007752 DE2007752B2 (de) 1970-02-19 1970-02-19 Verfahren zum Herstellen von dotiertem Halbleitermaterial

Publications (1)

Publication Number Publication Date
SE366227B true SE366227B (fr) 1974-04-22

Family

ID=5762769

Family Applications (1)

Application Number Title Priority Date Filing Date
SE216671A SE366227B (fr) 1970-02-19 1971-02-19

Country Status (8)

Country Link
JP (1) JPS5338597B1 (fr)
AT (1) AT338335B (fr)
CH (1) CH519249A (fr)
DE (1) DE2007752B2 (fr)
FR (1) FR2080610B1 (fr)
GB (1) GB1289432A (fr)
NL (1) NL7102176A (fr)
SE (1) SE366227B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2262021C2 (de) * 1972-12-19 1982-12-30 Degussa Ag, 6000 Frankfurt Verfahren zur Dotierung von Halbleitersilicium
DE3375253D1 (de) * 1982-09-23 1988-02-11 Allied Corp Polymeric boron-nitrogen dopant
JPH01135017A (ja) * 1987-11-20 1989-05-26 Fujitsu Ltd 半導体装置の製造方法
DE4013929C2 (de) * 1989-05-02 1995-12-07 Toshiba Kawasaki Kk Verfahren zum Einbringen von Störstoffen in eine Halbleitermaterial-Schicht beim Herstellen eines Halbleiterbauelements und Anwendung des Verfahrens

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3355291A (en) * 1963-10-08 1967-11-28 Texas Instruments Inc Application of glass to semiconductor devices
US3514348A (en) * 1967-05-10 1970-05-26 Ncr Co Method for making semiconductor devices
JPS4822536B1 (fr) * 1969-03-20 1973-07-06

Also Published As

Publication number Publication date
AT338335B (de) 1977-08-25
JPS5338597B1 (fr) 1978-10-16
GB1289432A (fr) 1972-09-20
DE2007752A1 (de) 1971-08-26
FR2080610A1 (fr) 1971-11-19
DE2007752C3 (fr) 1979-04-05
CH519249A (de) 1972-02-15
ATA82571A (de) 1976-12-15
FR2080610B1 (fr) 1976-04-16
DE2007752B2 (de) 1978-07-27
NL7102176A (fr) 1971-08-23

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