SE360217B - - Google Patents

Info

Publication number
SE360217B
SE360217B SE605571A SE605571A SE360217B SE 360217 B SE360217 B SE 360217B SE 605571 A SE605571 A SE 605571A SE 605571 A SE605571 A SE 605571A SE 360217 B SE360217 B SE 360217B
Authority
SE
Sweden
Application number
SE605571A
Inventor
J Dathe
L Grasser
W Mueller
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE360217B publication Critical patent/SE360217B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
SE605571A 1970-05-08 1971-05-10 SE360217B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702022551 DE2022551A1 (de) 1970-05-08 1970-05-08 Verfahren zur Herstellung eines pn-UEbergangs in Planartechnologie

Publications (1)

Publication Number Publication Date
SE360217B true SE360217B (xx) 1973-09-17

Family

ID=5770606

Family Applications (1)

Application Number Title Priority Date Filing Date
SE605571A SE360217B (xx) 1970-05-08 1971-05-10

Country Status (7)

Country Link
AT (1) AT334978B (xx)
CH (1) CH521668A (xx)
DE (1) DE2022551A1 (xx)
FR (1) FR2088436B1 (xx)
GB (1) GB1309228A (xx)
NL (1) NL7106312A (xx)
SE (1) SE360217B (xx)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116487413B (zh) * 2023-04-13 2024-04-12 锦州辽晶电子科技股份有限公司 一种低放大倍数变化率的功率晶体管及其制作方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328651A (en) * 1963-10-29 1967-06-27 Sylvania Electric Prod Semiconductor switching device and method of manufacture
US3491434A (en) * 1965-01-28 1970-01-27 Texas Instruments Inc Junction isolation diffusion

Also Published As

Publication number Publication date
FR2088436B1 (xx) 1976-05-28
CH521668A (de) 1972-04-15
AT334978B (de) 1977-02-10
GB1309228A (en) 1973-03-07
DE2022551A1 (de) 1971-11-25
FR2088436A1 (xx) 1972-01-07
NL7106312A (xx) 1971-11-10
ATA348471A (de) 1976-06-15

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