GB1309228A - Production of semiconductor components - Google Patents
Production of semiconductor componentsInfo
- Publication number
- GB1309228A GB1309228A GB1366571A GB1366571A GB1309228A GB 1309228 A GB1309228 A GB 1309228A GB 1366571 A GB1366571 A GB 1366571A GB 1366571 A GB1366571 A GB 1366571A GB 1309228 A GB1309228 A GB 1309228A
- Authority
- GB
- United Kingdom
- Prior art keywords
- trenches
- layer
- substrate
- type
- diffusing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 4
- 230000000873 masking effect Effects 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
1309228 Semi-conductor devices SIEMENS AG 7 May 1971 [8 May 1970] 13665/71 Heading H1K A pn-junction terminating beneath a masking layer 5 on a surface of a p(n)-type semi-conductor layer 3 on an n(p)-type substrate 1 is formed by diffusing n(p)-type regions 17, 19 into the walls of trenches 7, 9 extending at least most of the way through the layer 3, and the substrate 1 is divided into individual devices along the lines of the trenches. As shown the trenches 7, 9, which are preferably etched, may extend a short way into the substrate 1. A transistor is provided by diffusing an emitter region 13 simultaneously with the regions 17, 19, which form parts of the collector region constituted in the main, by the substrate 1. A part of the epitaxial layer 3 thus provides the base region. For a Si device layers 24, 25, 29 of SiO 2 and layer 23 of glass form in the trenches and over the emitter opening during diffusion. Openings for contacts are formed therein and in the oxide masking layer 5, and further openings are etched in the bottoms of the trenches to permit individual devices to be separated mechanically or by etching on planes 35.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19702022551 DE2022551A1 (en) | 1970-05-08 | 1970-05-08 | Method for the production of a pn-junction in planar technology |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1309228A true GB1309228A (en) | 1973-03-07 |
Family
ID=5770606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1366571A Expired GB1309228A (en) | 1970-05-08 | 1971-05-07 | Production of semiconductor components |
Country Status (7)
Country | Link |
---|---|
AT (1) | AT334978B (en) |
CH (1) | CH521668A (en) |
DE (1) | DE2022551A1 (en) |
FR (1) | FR2088436B1 (en) |
GB (1) | GB1309228A (en) |
NL (1) | NL7106312A (en) |
SE (1) | SE360217B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116487413A (en) * | 2023-04-13 | 2023-07-25 | 锦州辽晶电子科技有限公司 | Power transistor with low amplification factor change rate and manufacturing method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3328651A (en) * | 1963-10-29 | 1967-06-27 | Sylvania Electric Prod | Semiconductor switching device and method of manufacture |
US3491434A (en) * | 1965-01-28 | 1970-01-27 | Texas Instruments Inc | Junction isolation diffusion |
-
1970
- 1970-05-08 DE DE19702022551 patent/DE2022551A1/en active Pending
-
1971
- 1971-04-07 CH CH510471A patent/CH521668A/en not_active IP Right Cessation
- 1971-04-22 AT AT348471A patent/AT334978B/en not_active IP Right Cessation
- 1971-05-07 FR FR7116553A patent/FR2088436B1/fr not_active Expired
- 1971-05-07 NL NL7106312A patent/NL7106312A/xx unknown
- 1971-05-07 GB GB1366571A patent/GB1309228A/en not_active Expired
- 1971-05-10 SE SE605571A patent/SE360217B/xx unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116487413A (en) * | 2023-04-13 | 2023-07-25 | 锦州辽晶电子科技有限公司 | Power transistor with low amplification factor change rate and manufacturing method thereof |
CN116487413B (en) * | 2023-04-13 | 2024-04-12 | 锦州辽晶电子科技股份有限公司 | Power transistor with low amplification factor change rate and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
SE360217B (en) | 1973-09-17 |
FR2088436A1 (en) | 1972-01-07 |
ATA348471A (en) | 1976-06-15 |
AT334978B (en) | 1977-02-10 |
DE2022551A1 (en) | 1971-11-25 |
CH521668A (en) | 1972-04-15 |
FR2088436B1 (en) | 1976-05-28 |
NL7106312A (en) | 1971-11-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |