SE355263B - - Google Patents
Info
- Publication number
- SE355263B SE355263B SE08728/69A SE872869A SE355263B SE 355263 B SE355263 B SE 355263B SE 08728/69 A SE08728/69 A SE 08728/69A SE 872869 A SE872869 A SE 872869A SE 355263 B SE355263 B SE 355263B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/04—Dopants, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/041—Doping control in crystal growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/916—Autodoping control or utilization
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL686808723A NL140657B (nl) | 1968-06-21 | 1968-06-21 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting door een diffusiebehandeling en halfgeleiderinrichting, vervaardigd volgens deze werkwijze. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE355263B true SE355263B (de) | 1973-04-09 |
Family
ID=19803954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE08728/69A SE355263B (de) | 1968-06-21 | 1969-06-18 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3649387A (de) |
| AT (1) | AT307504B (de) |
| BE (1) | BE734861A (de) |
| CH (1) | CH496324A (de) |
| DE (1) | DE1930423C3 (de) |
| FR (1) | FR2011964B1 (de) |
| GB (1) | GB1270130A (de) |
| NL (1) | NL140657B (de) |
| SE (1) | SE355263B (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3907615A (en) * | 1968-06-28 | 1975-09-23 | Philips Corp | Production of a three-layer diac with five-layer edge regions having middle region thinner at center than edge |
| FR2076037B1 (de) * | 1970-01-12 | 1975-01-10 | Ibm | |
| US3798084A (en) * | 1972-08-11 | 1974-03-19 | Ibm | Simultaneous diffusion processing |
| GB1503223A (en) * | 1975-07-26 | 1978-03-08 | Int Computers Ltd | Formation of buried layers in a substrate |
| US4099997A (en) * | 1976-06-21 | 1978-07-11 | Rca Corporation | Method of fabricating a semiconductor device |
| JPS543479A (en) * | 1977-06-09 | 1979-01-11 | Toshiba Corp | Semiconductor device and its manufacture |
| US4264383A (en) * | 1979-08-23 | 1981-04-28 | Westinghouse Electric Corp. | Technique for making asymmetric thyristors |
| DE2946963A1 (de) * | 1979-11-21 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Schnelle bipolare transistoren |
| FR2471668A1 (fr) * | 1979-12-14 | 1981-06-19 | Silicium Semiconducteur Ssc | Procede de diffusion de phosphore dans un semi-conducteur et procede d'obtention de phosphure de silicium |
| JPH0793277B2 (ja) * | 1989-02-28 | 1995-10-09 | インダストリアル・テクノロジー・リサーチ・インステイテユート | ＩｎＰ基板中へのＣｄ拡散方法 |
| US5091321A (en) * | 1991-07-22 | 1992-02-25 | Allegro Microsystems, Inc. | Method for making an NPN transistor with controlled base width compatible with making a Bi-MOS integrated circuit |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3193419A (en) * | 1960-12-30 | 1965-07-06 | Texas Instruments Inc | Outdiffusion method |
| US3183130A (en) * | 1962-01-22 | 1965-05-11 | Motorola Inc | Diffusion process and apparatus |
| US3279963A (en) * | 1963-07-23 | 1966-10-18 | Ibm | Fabrication of semiconductor devices |
| FR1438731A (fr) * | 1964-06-20 | 1966-05-13 | Siemens Ag | Procédé pour la diffusion de produits étrangers dans un corps semi-conducteur monocristallin |
-
1968
- 1968-06-21 NL NL686808723A patent/NL140657B/xx not_active IP Right Cessation
-
1969
- 1969-06-14 DE DE1930423A patent/DE1930423C3/de not_active Expired
- 1969-06-18 CH CH930269A patent/CH496324A/de not_active IP Right Cessation
- 1969-06-18 FR FR6920310A patent/FR2011964B1/fr not_active Expired
- 1969-06-18 AT AT576969A patent/AT307504B/de not_active IP Right Cessation
- 1969-06-18 GB GB30851/69A patent/GB1270130A/en not_active Expired
- 1969-06-18 SE SE08728/69A patent/SE355263B/xx unknown
- 1969-06-19 BE BE734861D patent/BE734861A/xx unknown
- 1969-06-20 US US834972A patent/US3649387A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| NL140657B (nl) | 1973-12-17 |
| NL6808723A (de) | 1969-12-23 |
| BE734861A (de) | 1969-12-19 |
| DE1930423C3 (de) | 1974-09-26 |
| GB1270130A (en) | 1972-04-12 |
| FR2011964A1 (de) | 1970-03-13 |
| FR2011964B1 (de) | 1973-11-16 |
| DE1930423B2 (de) | 1974-02-21 |
| AT307504B (de) | 1973-05-25 |
| CH496324A (de) | 1970-09-15 |
| US3649387A (en) | 1972-03-14 |
| DE1930423A1 (de) | 1970-01-02 |