NL6808723A - - Google Patents

Info

Publication number
NL6808723A
NL6808723A NL6808723A NL6808723A NL6808723A NL 6808723 A NL6808723 A NL 6808723A NL 6808723 A NL6808723 A NL 6808723A NL 6808723 A NL6808723 A NL 6808723A NL 6808723 A NL6808723 A NL 6808723A
Authority
NL
Netherlands
Application number
NL6808723A
Other versions
NL140657B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL686808723A priority Critical patent/NL140657B/xx
Priority to DE1930423A priority patent/DE1930423C3/de
Priority to GB30851/69A priority patent/GB1270130A/en
Priority to CH930269A priority patent/CH496324A/de
Priority to SE08728/69A priority patent/SE355263B/xx
Priority to FR6920310A priority patent/FR2011964B1/fr
Priority to AT576969A priority patent/AT307504B/de
Priority to BE734861D priority patent/BE734861A/xx
Priority to US834972A priority patent/US3649387A/en
Publication of NL6808723A publication Critical patent/NL6808723A/xx
Publication of NL140657B publication Critical patent/NL140657B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/04—Dopants, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/916—Autodoping control or utilization

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL686808723A 1968-06-21 1968-06-21 Werkwijze voor het vervaardigen van een halfgeleiderinrichting door een diffusiebehandeling en halfgeleiderinrichting, vervaardigd volgens deze werkwijze. NL140657B (nl)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL686808723A NL140657B (nl) 1968-06-21 1968-06-21 Werkwijze voor het vervaardigen van een halfgeleiderinrichting door een diffusiebehandeling en halfgeleiderinrichting, vervaardigd volgens deze werkwijze.
DE1930423A DE1930423C3 (de) 1968-06-21 1969-06-14 Verfahren zur Herstellung eines Halbleiterbauelementes
GB30851/69A GB1270130A (en) 1968-06-21 1969-06-18 Improvements in and relating to methods of manufacturing semiconductor devices
CH930269A CH496324A (de) 1968-06-21 1969-06-18 Verfahren zur Herstellung eines Halbleiterbauelements
SE08728/69A SE355263B (de) 1968-06-21 1969-06-18
FR6920310A FR2011964B1 (de) 1968-06-21 1969-06-18
AT576969A AT307504B (de) 1968-06-21 1969-06-18 Verfahren zur Herstellung eines Halbleiterbauelementes
BE734861D BE734861A (de) 1968-06-21 1969-06-19
US834972A US3649387A (en) 1968-06-21 1969-06-20 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL686808723A NL140657B (nl) 1968-06-21 1968-06-21 Werkwijze voor het vervaardigen van een halfgeleiderinrichting door een diffusiebehandeling en halfgeleiderinrichting, vervaardigd volgens deze werkwijze.

Publications (2)

Publication Number Publication Date
NL6808723A true NL6808723A (de) 1969-12-23
NL140657B NL140657B (nl) 1973-12-17

Family

ID=19803954

Family Applications (1)

Application Number Title Priority Date Filing Date
NL686808723A NL140657B (nl) 1968-06-21 1968-06-21 Werkwijze voor het vervaardigen van een halfgeleiderinrichting door een diffusiebehandeling en halfgeleiderinrichting, vervaardigd volgens deze werkwijze.

Country Status (9)

Country Link
US (1) US3649387A (de)
AT (1) AT307504B (de)
BE (1) BE734861A (de)
CH (1) CH496324A (de)
DE (1) DE1930423C3 (de)
FR (1) FR2011964B1 (de)
GB (1) GB1270130A (de)
NL (1) NL140657B (de)
SE (1) SE355263B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2076037A1 (de) * 1970-01-12 1971-10-15 Ibm

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3907615A (en) * 1968-06-28 1975-09-23 Philips Corp Production of a three-layer diac with five-layer edge regions having middle region thinner at center than edge
US3798084A (en) * 1972-08-11 1974-03-19 Ibm Simultaneous diffusion processing
GB1503223A (en) * 1975-07-26 1978-03-08 Int Computers Ltd Formation of buried layers in a substrate
US4099997A (en) * 1976-06-21 1978-07-11 Rca Corporation Method of fabricating a semiconductor device
JPS543479A (en) * 1977-06-09 1979-01-11 Toshiba Corp Semiconductor device and its manufacture
US4264383A (en) * 1979-08-23 1981-04-28 Westinghouse Electric Corp. Technique for making asymmetric thyristors
DE2946963A1 (de) * 1979-11-21 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Schnelle bipolare transistoren
FR2471668A1 (fr) * 1979-12-14 1981-06-19 Silicium Semiconducteur Ssc Procede de diffusion de phosphore dans un semi-conducteur et procede d'obtention de phosphure de silicium
JPH0793277B2 (ja) * 1989-02-28 1995-10-09 インダストリアル・テクノロジー・リサーチ・インステイテユート ＩｎＰ基板中へのＣｄ拡散方法
US5091321A (en) * 1991-07-22 1992-02-25 Allegro Microsystems, Inc. Method for making an NPN transistor with controlled base width compatible with making a Bi-MOS integrated circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3193419A (en) * 1960-12-30 1965-07-06 Texas Instruments Inc Outdiffusion method
US3183130A (en) * 1962-01-22 1965-05-11 Motorola Inc Diffusion process and apparatus
US3279963A (en) * 1963-07-23 1966-10-18 Ibm Fabrication of semiconductor devices
FR1438731A (fr) * 1964-06-20 1966-05-13 Siemens Ag Procédé pour la diffusion de produits étrangers dans un corps semi-conducteur monocristallin

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2076037A1 (de) * 1970-01-12 1971-10-15 Ibm

Also Published As

Publication number Publication date
AT307504B (de) 1973-05-25
FR2011964A1 (de) 1970-03-13
NL140657B (nl) 1973-12-17
US3649387A (en) 1972-03-14
CH496324A (de) 1970-09-15
SE355263B (de) 1973-04-09
GB1270130A (en) 1972-04-12
DE1930423A1 (de) 1970-01-02
DE1930423B2 (de) 1974-02-21
DE1930423C3 (de) 1974-09-26
BE734861A (de) 1969-12-19
FR2011964B1 (de) 1973-11-16

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: PHILIPS