SE343176B - - Google Patents

Info

Publication number
SE343176B
SE343176B SE14907/69A SE1490769A SE343176B SE 343176 B SE343176 B SE 343176B SE 14907/69 A SE14907/69 A SE 14907/69A SE 1490769 A SE1490769 A SE 1490769A SE 343176 B SE343176 B SE 343176B
Authority
SE
Sweden
Application number
SE14907/69A
Inventor
T Cox
C Logan
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of SE343176B publication Critical patent/SE343176B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/10—Lift-off masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/105—Masks, metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
SE14907/69A 1968-10-31 1969-10-30 SE343176B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77209968A 1968-10-31 1968-10-31

Publications (1)

Publication Number Publication Date
SE343176B true SE343176B (xx) 1972-02-28

Family

ID=25093914

Family Applications (1)

Application Number Title Priority Date Filing Date
SE14907/69A SE343176B (xx) 1968-10-31 1969-10-30

Country Status (7)

Country Link
US (1) US3567508A (xx)
BE (1) BE740973A (xx)
DE (1) DE1952578A1 (xx)
FR (1) FR2022335B1 (xx)
GB (1) GB1267828A (xx)
IE (1) IE33566B1 (xx)
SE (1) SE343176B (xx)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806779A (en) * 1969-10-02 1974-04-23 Omron Tateisi Electronics Co Semiconductor device and method of making same
US3641402A (en) * 1969-12-30 1972-02-08 Ibm Semiconductor device with beta tantalum-gold composite conductor metallurgy
US3686539A (en) * 1970-05-04 1972-08-22 Rca Corp Gallium arsenide semiconductor device with improved ohmic electrode
FR2062616A5 (xx) * 1970-09-24 1971-06-25 Telecommunications Sa
US3717798A (en) * 1971-01-21 1973-02-20 Sprague Electric Co Overlay for ohmic contact electrodes
US3728591A (en) * 1971-09-03 1973-04-17 Rca Corp Gate protective device for insulated gate field-effect transistors
US3784379A (en) * 1971-12-02 1974-01-08 Itt Method of laminating one or more materials with a base structure for use in a high vacuum electron tube and method of masking the base preparatory to lamination
US3922774A (en) * 1972-05-01 1975-12-02 Communications Satellite Corp Tantalum pentoxide anti-reflective coating
DE2253830C3 (de) * 1972-11-03 1983-06-16 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer Solarzelle und Solarzellenbatterie
US3904453A (en) * 1973-08-22 1975-09-09 Communications Satellite Corp Fabrication of silicon solar cell with anti reflection film
US4174562A (en) * 1973-11-02 1979-11-20 Harris Corporation Process for forming metallic ground grid for integrated circuits
US3921200A (en) * 1974-04-15 1975-11-18 Motorola Inc Composite beam lead metallization
US3943555A (en) * 1974-05-02 1976-03-09 Rca Corporation SOS Bipolar transistor
US4131692A (en) * 1974-07-11 1978-12-26 Siemens Aktiengesellschaft Method for making ceramic electric resistor
US4164754A (en) * 1974-07-16 1979-08-14 Thomson-Brandt Method of manufacturing a die designed to duplicate a video frequency signal recording
US4119483A (en) * 1974-07-30 1978-10-10 U.S. Philips Corporation Method of structuring thin layers
US3965279A (en) * 1974-09-03 1976-06-22 Bell Telephone Laboratories, Incorporated Ohmic contacts for group III-V n-type semiconductors
NL7412383A (nl) * 1974-09-19 1976-03-23 Philips Nv Werkwijze voor het vervaardigen van een in- richting met een geleiderpatroon.
US4098452A (en) * 1975-03-31 1978-07-04 General Electric Company Lead bonding method
US3978517A (en) * 1975-04-04 1976-08-31 Motorola, Inc. Titanium-silver-palladium metallization system and process therefor
JPS5247686A (en) * 1975-10-15 1977-04-15 Toshiba Corp Semiconductor device and process for production of same
US4107726A (en) * 1977-01-03 1978-08-15 Raytheon Company Multilayer interconnected structure for semiconductor integrated circuit
US4111725A (en) * 1977-05-06 1978-09-05 Bell Telephone Laboratories, Incorporated Selective lift-off technique for fabricating gaas fets
US4215156A (en) * 1977-08-26 1980-07-29 International Business Machines Corporation Method for fabricating tantalum semiconductor contacts
US4184933A (en) * 1978-11-29 1980-01-22 Harris Corporation Method of fabricating two level interconnects and fuse on an IC
US4310569A (en) * 1980-03-10 1982-01-12 Trw Inc. Method of adhesion of passivation layer to gold metalization regions in a semiconductor device
DE3103615A1 (de) * 1981-02-03 1982-09-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung von extremen feinstrukturen
US4339305A (en) * 1981-02-05 1982-07-13 Rockwell International Corporation Planar circuit fabrication by plating and liftoff
US4899199A (en) * 1983-09-30 1990-02-06 International Rectifier Corporation Schottky diode with titanium or like layer contacting the dielectric layer
DE3406542A1 (de) * 1984-02-23 1985-08-29 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum herstellen eines halbleiterbauelementes
DE3637513A1 (de) * 1986-11-04 1988-05-11 Semikron Elektronik Gmbh Verfahren zum herstellen feinstrukturierter kontaktelektroden von leistungs-halbleiterbauelementen
US4840302A (en) * 1988-04-15 1989-06-20 International Business Machines Corporation Chromium-titanium alloy
US6797586B2 (en) * 2001-06-28 2004-09-28 Koninklijke Philips Electronics N.V. Silicon carbide schottky barrier diode and method of making
TWI404811B (zh) * 2009-05-07 2013-08-11 Atomic Energy Council 金屬氮氧化物薄膜結構之製作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL128768C (xx) * 1960-12-09
GB980513A (en) * 1961-11-17 1965-01-13 Licentia Gmbh Improvements relating to the use of silicon in semi-conductor devices
NL132313C (xx) * 1964-12-17 1900-01-01

Also Published As

Publication number Publication date
BE740973A (xx) 1970-04-29
FR2022335A1 (xx) 1970-07-31
IE33566L (en) 1970-04-30
FR2022335B1 (xx) 1973-12-07
US3567508A (en) 1971-03-02
IE33566B1 (en) 1974-08-07
DE1952578A1 (de) 1970-05-06
GB1267828A (en) 1972-03-22

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