SE332136B - - Google Patents
Info
- Publication number
- SE332136B SE332136B SE09469/66A SE946966A SE332136B SE 332136 B SE332136 B SE 332136B SE 09469/66 A SE09469/66 A SE 09469/66A SE 946966 A SE946966 A SE 946966A SE 332136 B SE332136 B SE 332136B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
- H01G7/025—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric
- H01G7/026—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric with ceramic dielectric
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G33/00—Compounds of niobium
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
- H01G7/025—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US47124065A | 1965-07-12 | 1965-07-12 | |
| US516357A US3346344A (en) | 1965-07-12 | 1965-12-27 | Growth of lithium niobate crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE332136B true SE332136B (no) | 1971-01-25 |
Family
ID=27043367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE09469/66A SE332136B (no) | 1965-07-12 | 1966-07-11 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3346344A (no) |
| JP (1) | JPS5340719B1 (no) |
| BE (1) | BE683386A (no) |
| DE (1) | DE1667866B1 (no) |
| GB (2) | GB1149492A (no) |
| NL (1) | NL149090B (no) |
| SE (1) | SE332136B (no) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3446603A (en) * | 1965-07-12 | 1969-05-27 | Bell Telephone Labor Inc | Growth of lithium niobate crystals |
| US3418086A (en) * | 1966-06-20 | 1968-12-24 | Bell Telephone Labor Inc | Lithium meta-niobate crystalline growth from melt containing magnesium oxide |
| US3428438A (en) * | 1966-11-14 | 1969-02-18 | Hughes Aircraft Co | Potassium tantalate niobate crystal growth from a melt |
| US3528765A (en) * | 1967-06-08 | 1970-09-15 | Union Carbide Corp | Lithium niobate crystals having elevated phase matching temperatures and method therefor |
| US3653814A (en) * | 1970-08-03 | 1972-04-04 | Bell Telephone Labor Inc | Technique for the growth of single crystal lead molybdate |
| US4045278A (en) * | 1973-11-22 | 1977-08-30 | Siemens Aktiengesellschaft | Method and apparatus for floating melt zone of semiconductor crystal rods |
| US4001076A (en) * | 1974-12-11 | 1977-01-04 | Gte Laboratories Incorporated | Method for growing thin epitaxial layers of a non-linear, optically active material |
| DE2624357A1 (de) * | 1975-06-11 | 1976-12-23 | Commissariat Energie Atomique | Verfahren und vorrichtung zum messen und regeln der erstarrung eines fluessig/ fest-zweiphasensystems |
| US3980438A (en) * | 1975-08-28 | 1976-09-14 | Arthur D. Little, Inc. | Apparatus for forming semiconductor crystals of essentially uniform diameter |
| JPS5264698A (en) * | 1975-11-22 | 1977-05-28 | Fujitsu Ltd | Process for treating single area |
| US4330359A (en) * | 1981-02-10 | 1982-05-18 | Lovelace Alan M Administrator | Electromigration process for the purification of molten silicon during crystal growth |
| FR2526449B1 (fr) * | 1982-05-04 | 1985-07-05 | Commissariat Energie Atomique | Procede et dispositif de fabrication d'un monocristal, exempt de toute contrainte, d'un compose ferroelectrique a structure cristalline |
| JPH02501217A (ja) * | 1987-08-27 | 1990-04-26 | ヒユーズ・エアクラフト・カンパニー | 高い純度（Ｎｂ１‐ｘ Ｔａｘ）２Ｏ５およびＫＮｂ１‐ｘ Ｔａｘ Ｏ３ |
| CH696907A5 (de) | 2003-02-18 | 2008-01-31 | Schott Ag | Verfahren zum Herstellen von hexagonalen Einkristallen und deren Verwendung als Substrat für Halbleiterbauelemente. |
| DE10306801A1 (de) * | 2003-02-18 | 2004-09-02 | Schott Glas | Verfahren zur Herstellung von hexagonalen Einkristallen und deren Verwendung als Substrat für Halbleiterbauelemente |
| DE102004002109A1 (de) * | 2004-01-14 | 2005-08-11 | Deutsche Telekom Ag | Behandlung von Kristallen zur Vermeidung lichtinduzierter Änderungen des Brechungsindex |
| US8261690B2 (en) * | 2006-07-14 | 2012-09-11 | Georgia Tech Research Corporation | In-situ flux measurement devices, methods, and systems |
| CN105624790A (zh) | 2016-03-01 | 2016-06-01 | 南开大学 | 铋镁双掺铌酸锂晶体 |
| CN114773058B (zh) * | 2022-03-24 | 2023-06-20 | 华南理工大学 | 一种负离子功能材料及其制备方法和应用 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2702427A (en) * | 1948-03-13 | 1955-02-22 | Roberts Shepard | Method of making electromechanically sensitive material |
| US2706326A (en) * | 1952-04-23 | 1955-04-19 | Bell Telephone Labor Inc | Polarization process for pseudocubic ferroelectrics |
| DE959479C (de) * | 1952-09-23 | 1957-03-07 | Siemens Ag | Verfahren zum Ziehen von Halbleiterkristallen aus einer Schmelze fuer elektrisch unsymmetrisch leitende Systeme mit oertlich verschieden grosser Stoerstellenkonzentration |
| US2983988A (en) * | 1953-06-16 | 1961-05-16 | Honeywell Regulator Co | Method of polarizing transducers |
| US2842467A (en) * | 1954-04-28 | 1958-07-08 | Ibm | Method of growing semi-conductors |
| US2777188A (en) * | 1954-12-21 | 1957-01-15 | Bell Telephone Labor Inc | Method and apparatus for processing ferroelectric crystal elements |
| US2758008A (en) * | 1955-03-24 | 1956-08-07 | Ibm | Process of preparing pure alkali metal niobate |
| US3283164A (en) * | 1963-12-19 | 1966-11-01 | Bell Telephone Labor Inc | Devices utilizing lithium meta-gallate |
-
1965
- 1965-12-27 US US516357A patent/US3346344A/en not_active Expired - Lifetime
-
1966
- 1966-06-29 BE BE683386D patent/BE683386A/xx unknown
- 1966-07-06 NL NL666609451A patent/NL149090B/xx unknown
- 1966-07-07 GB GB30535/66A patent/GB1149492A/en not_active Expired
- 1966-07-08 DE DE19661667866 patent/DE1667866B1/de not_active Withdrawn
- 1966-07-11 SE SE09469/66A patent/SE332136B/xx unknown
- 1966-07-12 JP JP4517966A patent/JPS5340719B1/ja active Pending
- 1966-12-22 GB GB57425/66A patent/GB1172980A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1149492A (en) | 1969-04-23 |
| NL6609451A (no) | 1967-01-13 |
| BE683386A (no) | 1966-12-01 |
| US3346344A (en) | 1967-10-10 |
| JPS5340719B1 (no) | 1978-10-28 |
| NL149090B (nl) | 1976-04-15 |
| DE1667866B1 (de) | 1972-03-23 |
| GB1172980A (en) | 1969-12-03 |