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Priority to SE07683/69*ApriorityCriticalpatent/SE331864B/xx
Priority to GB2584170Aprioritypatent/GB1318087A/en
Priority to NL7007783Aprioritypatent/NL7007783A/xx
Priority to FR7019897Aprioritypatent/FR2043851B1/fr
Priority to DE19702026411prioritypatent/DE2026411A1/de
Publication of SE331864BpublicationCriticalpatent/SE331864B/xx
Distribution of impurities in the p-n junctions of highly-alloyed germanium(Tunnel diode capacitance relation to displacement interpreted in terms of impurity drift in nonuniform field of p-n junction in highly doped germanium diodes)
On the distribution of impurities in heavily doped germanium p-n junctions(Tunnel diode capacitance relation to displacement interpreted in terms of impurity drift in nonuniform field of p-n junction in highly doped germanium diodes)
Study of the dependence of minority carrier lifetime on the concentration of majority carriers in heavily doped germanium by means of p-n junctions(Minority carrier lifetime dependence on majority carrier concentrations based on diffusion capacitance measurements in germanium p-n junction)
Avalanche effects in silicon p-n junctions. i- localized photomultiplication studies on microplasmas(Photocurrent multiplication in a microplasma measured as a function of reverse voltage in silicon p-n junction, noting avalanche effects)
Quiet solar daily variations of the geomagnetic field during igy. ii- noncyclic variations during magnetically quiet days- seasonal changes in field value at night(Noncyclic variation during magnetically quiet days, examining seasonal changes in geomagnetic field value at night during IGY)
The reactive properties of reverse-biased silicon p-n junction(Bias voltage dependence of capacitance in n-type silicon p-n junctions with voltage breakdown)
Certain characteristics of the autophotoelectron emission of iron-doped GaAs(Autoelectron and autophotoelectron emission from Fe-doped p-type GaAs cathodes in vacuum, noting I-V and emission characteristics dependence on light flux)
Photovoltaic and space charge capacitance measurements to study barrier height at metal- semiconductor interface of metals evaporated on cadmium sulfide and gallium arsenide samples
Investigation of p-n junctions in gallium arsenide using the dependence of the differential capacitance on the voltage(Fused and diffused p-n junctions from gallium arsenide with measurements of differential capacitance and conductance)