SE328851B - - Google Patents

Info

Publication number
SE328851B
SE328851B SE13326/66A SE1332666A SE328851B SE 328851 B SE328851 B SE 328851B SE 13326/66 A SE13326/66 A SE 13326/66A SE 1332666 A SE1332666 A SE 1332666A SE 328851 B SE328851 B SE 328851B
Authority
SE
Sweden
Application number
SE13326/66A
Inventor
G Zwanenburg
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE328851B publication Critical patent/SE328851B/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
SE13326/66A 1965-10-06 1966-10-03 SE328851B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6512921A NL6512921A (xx) 1965-10-06 1965-10-06

Publications (1)

Publication Number Publication Date
SE328851B true SE328851B (xx) 1970-09-28

Family

ID=19794316

Family Applications (1)

Application Number Title Priority Date Filing Date
SE13326/66A SE328851B (xx) 1965-10-06 1966-10-03

Country Status (9)

Country Link
US (1) US3499736A (xx)
AT (1) AT296388B (xx)
BE (1) BE687917A (xx)
CH (1) CH491659A (xx)
DE (1) DE1519850C3 (xx)
FR (1) FR1509967A (xx)
GB (1) GB1154240A (xx)
NL (1) NL6512921A (xx)
SE (1) SE328851B (xx)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth
US3998598A (en) * 1973-11-23 1976-12-21 Semimetals, Inc. Automatic diameter control for crystal growing facilities
US4080172A (en) * 1975-12-29 1978-03-21 Monsanto Company Zone refiner automatic control
US4239583A (en) * 1979-06-07 1980-12-16 Mobil Tyco Solar Energy Corporation Method and apparatus for crystal growth control
US4396824A (en) * 1979-10-09 1983-08-02 Siltec Corporation Conduit for high temperature transfer of molten semiconductor crystalline material
US4352785A (en) * 1982-01-04 1982-10-05 Western Electric Co., Inc. Crystal grower with torque supportive collapsible pulling mechanism
JPS60112695A (ja) * 1983-11-22 1985-06-19 Sumitomo Electric Ind Ltd 化合物単結晶の引上方法
JPS60131900A (ja) * 1983-12-16 1985-07-13 Sumitomo Electric Ind Ltd 単結晶の製造方法
US4618975A (en) * 1984-12-21 1986-10-21 At&T Technologies, Inc. Method and apparatus for analyzing a porous nonhomogeneous cylindrical object
US5078830A (en) * 1989-04-10 1992-01-07 Mitsubishi Metal Corporation Method for growing single crystal
JPH06102590B2 (ja) * 1990-02-28 1994-12-14 信越半導体株式会社 Ｃｚ法による単結晶ネック部育成自動制御方法
US5589690A (en) * 1995-03-21 1996-12-31 National Institute Of Standards And Technology Apparatus and method for monitoring casting process
US5746828A (en) * 1996-01-16 1998-05-05 General Signal Corporation Temperature control system for growing high-purity monocrystals
JP4020313B2 (ja) * 2003-03-28 2007-12-12 ステラケミファ株式会社 フッ化物中の不純物及び色中心分析方法及び単結晶育成用材料の製造方法
US7118626B2 (en) * 2003-08-29 2006-10-10 University Of Alabama In Huntsville Crystallization cassette for the growth and analysis of macromolecular crystals and an associated method
CN105350072A (zh) * 2015-11-06 2016-02-24 南京晶升能源设备有限公司 泡生法晶体生长单晶炉脱锅方法、温控方法和控制方法
CN112705590B (zh) * 2020-12-11 2023-02-07 山东新升光电科技有限责任公司 一种蓝宝石单晶炉提拉杆矫直装置及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3011055A (en) * 1954-06-03 1961-11-28 J J Maguire Method and means for gauging fine strands
US3001070A (en) * 1956-02-09 1961-09-19 Jr William H Davis Method of gaging filling heights in closed containers
NL135666C (xx) * 1959-08-17
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil
NL253106A (xx) * 1960-06-25
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods
US3372276A (en) * 1965-05-21 1968-03-05 Atomic Energy Commission Usa Method and system for the non-destructive inspection of variable density plates

Also Published As

Publication number Publication date
DE1519850A1 (de) 1969-03-20
GB1154240A (en) 1969-06-04
BE687917A (xx) 1967-04-06
CH491659A (de) 1970-06-15
NL6512921A (xx) 1967-04-07
DE1519850C3 (de) 1975-07-31
US3499736A (en) 1970-03-10
FR1509967A (fr) 1968-01-19
DE1519850B2 (de) 1974-12-12
AT296388B (de) 1972-02-10

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