SE325641B - - Google Patents

Info

Publication number
SE325641B
SE325641B SE01158/63A SE115863A SE325641B SE 325641 B SE325641 B SE 325641B SE 01158/63 A SE01158/63 A SE 01158/63A SE 115863 A SE115863 A SE 115863A SE 325641 B SE325641 B SE 325641B
Authority
SE
Sweden
Application number
SE01158/63A
Inventor
J Grabmaier
E Sirtl
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE325641B publication Critical patent/SE325641B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE01158/63A 1962-02-02 1963-02-01 SE325641B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1962S0077852 DE1236481B (de) 1962-02-02 1962-02-02 Verfahren zur Herstellen einer Halbleiteranordnung durch Abscheiden des Halbleiterstoffes aus der Gasphase

Publications (1)

Publication Number Publication Date
SE325641B true SE325641B (nl) 1970-07-06

Family

ID=7507071

Family Applications (1)

Application Number Title Priority Date Filing Date
SE01158/63A SE325641B (nl) 1962-02-02 1963-02-01

Country Status (5)

Country Link
CH (1) CH408876A (nl)
DE (1) DE1236481B (nl)
GB (1) GB970456A (nl)
NL (1) NL288409A (nl)
SE (1) SE325641B (nl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372671A (en) * 1965-05-26 1968-03-12 Westinghouse Electric Corp Apparatus for producing vapor growth of silicon crystals
JPS5277590A (en) * 1975-12-24 1977-06-30 Toshiba Corp Semiconductor producing device
NL187414C (nl) * 1978-04-21 1991-09-16 Philips Nv Werkwijze voor het aanbrengen van een epitaxiale laag.

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE943422C (de) * 1949-04-02 1956-05-17 Licentia Gmbh Gesteuerter Trockengleichrichter, insbesondere mit Germanium, Silizium oder Siliziumkarbid als halbleitender Substanz
DE853926C (de) * 1949-04-02 1952-10-30 Licentia Gmbh Verfahren zum Herstellen von Trockengleichrichtern mit Silizium als halbleitender Substanz
BE509317A (nl) * 1951-03-07 1900-01-01
DE950848C (de) * 1953-03-19 1956-10-18 Heraeus Gmbh W C Verfahren zur Herstellung von reinem Silicium
DE1057845B (de) * 1954-03-10 1959-05-21 Licentia Gmbh Verfahren zur Herstellung von einkristallinen halbleitenden Verbindungen
DE966471C (de) * 1954-07-14 1957-08-08 Heraeus Gmbh W C Verfahren zur Herstellung von reinem Silicium
DE1063870B (de) * 1956-06-28 1959-08-20 Gustav Weissenberg Verfahren und Vorrichtung zum tiegellosen Zuechten von Einkristallen aus hochreinem Silicium oder Germanium

Also Published As

Publication number Publication date
GB970456A (en) 1964-09-23
CH408876A (de) 1966-03-15
DE1236481B (de) 1967-03-16
NL288409A (nl)

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