SE323748B - - Google Patents

Info

Publication number
SE323748B
SE323748B SE3357/62A SE335762A SE323748B SE 323748 B SE323748 B SE 323748B SE 3357/62 A SE3357/62 A SE 3357/62A SE 335762 A SE335762 A SE 335762A SE 323748 B SE323748 B SE 323748B
Authority
SE
Sweden
Application number
SE3357/62A
Inventor
Bernuth G Von
O Jaentsch
D Krockow
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE323748B publication Critical patent/SE323748B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
SE3357/62A 1961-03-29 1962-03-26 SE323748B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1961S0073228 DE1182353C2 (de) 1961-03-29 1961-03-29 Verfahren zum Herstellen eines Halbleiter-bauelements, wie Halbleiterstromtor oder Flaechentransistor, mit einer hochohmigen n-Zone zwischen zwei p-Zonen im Halbleiter-koerper

Publications (1)

Publication Number Publication Date
SE323748B true SE323748B (xx) 1970-05-11

Family

ID=7503754

Family Applications (1)

Application Number Title Priority Date Filing Date
SE3357/62A SE323748B (xx) 1961-03-29 1962-03-26

Country Status (5)

Country Link
US (1) US3316465A (xx)
CH (1) CH392704A (xx)
DE (1) DE1182353C2 (xx)
GB (1) GB1007598A (xx)
SE (1) SE323748B (xx)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1274245B (de) * 1965-06-15 1968-08-01 Siemens Ag Halbleiter-Gleichrichterdiode fuer Starkstrom
US3453508A (en) * 1967-10-18 1969-07-01 Int Rectifier Corp Pinch-off shunt for controlled rectifiers
DE1816841A1 (de) * 1968-12-04 1970-07-02 Siemens Ag Verfahren zum Stabilisieren der Kennlinie eines Halbleiterbauelements
US3628106A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with protective peripheral junction portion
US4017340A (en) * 1975-08-04 1977-04-12 General Electric Company Semiconductor element having a polymeric protective coating and glass coating overlay
US4040874A (en) * 1975-08-04 1977-08-09 General Electric Company Semiconductor element having a polymeric protective coating and glass coating overlay
GB1563421A (en) * 1975-12-18 1980-03-26 Gen Electric Polyimide-siloxane copolymer protective coating for semiconductor devices
US6388203B1 (en) 1995-04-04 2002-05-14 Unitive International Limited Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby
AU5316996A (en) 1995-04-05 1996-10-23 Mcnc A solder bump structure for a microelectronic substrate
US6025767A (en) * 1996-08-05 2000-02-15 Mcnc Encapsulated micro-relay modules and methods of fabricating same
EP1332654B1 (en) * 2000-11-10 2005-01-12 Unitive Electronics, Inc. Methods of positioning components using liquid prime movers and related structures
US6863209B2 (en) 2000-12-15 2005-03-08 Unitivie International Limited Low temperature methods of bonding components
US7531898B2 (en) * 2002-06-25 2009-05-12 Unitive International Limited Non-Circular via holes for bumping pads and related structures
US7547623B2 (en) * 2002-06-25 2009-06-16 Unitive International Limited Methods of forming lead free solder bumps
US6960828B2 (en) 2002-06-25 2005-11-01 Unitive International Limited Electronic structures including conductive shunt layers
TWI225899B (en) * 2003-02-18 2005-01-01 Unitive Semiconductor Taiwan C Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer
US7049216B2 (en) * 2003-10-14 2006-05-23 Unitive International Limited Methods of providing solder structures for out plane connections
JP4885426B2 (ja) * 2004-03-12 2012-02-29 ルネサスエレクトロニクス株式会社 半導体記憶装置、半導体装置及びその製造方法
US7358174B2 (en) 2004-04-13 2008-04-15 Amkor Technology, Inc. Methods of forming solder bumps on exposed metal pads
US20060205170A1 (en) * 2005-03-09 2006-09-14 Rinne Glenn A Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices
US7674701B2 (en) 2006-02-08 2010-03-09 Amkor Technology, Inc. Methods of forming metal layers using multi-layer lift-off patterns
US7932615B2 (en) * 2006-02-08 2011-04-26 Amkor Technology, Inc. Electronic devices including solder bumps on compliant dielectric layers

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1043517B (de) * 1955-09-23 1958-11-13 Siemens Ag Verfahren zum Aufbringen eines Schutzueberzuges auf der Oberflaeche von Halbleiteranordnungen
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
NL231410A (xx) * 1958-09-16
DE1097572B (de) * 1959-11-07 1961-01-19 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen mit pn-UEbergang

Also Published As

Publication number Publication date
DE1182353B (de) 1964-11-26
CH392704A (de) 1965-05-31
US3316465A (en) 1967-04-25
DE1182353C2 (de) 1973-01-11
GB1007598A (en) 1965-10-13

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