SE319460B - - Google Patents
Info
- Publication number
- SE319460B SE319460B SE1159/66A SE115966A SE319460B SE 319460 B SE319460 B SE 319460B SE 1159/66 A SE1159/66 A SE 1159/66A SE 115966 A SE115966 A SE 115966A SE 319460 B SE319460 B SE 319460B
- Authority
- SE
- Sweden
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES95244A DE1297086B (de) | 1965-01-29 | 1965-01-29 | Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE319460B true SE319460B (de) | 1970-01-19 |
Family
ID=7519237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE1159/66A SE319460B (de) | 1965-01-29 | 1966-01-28 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3472684A (de) |
| AT (1) | AT256940B (de) |
| CH (1) | CH457374A (de) |
| DE (1) | DE1297086B (de) |
| GB (1) | GB1124330A (de) |
| NL (1) | NL6517274A (de) |
| SE (1) | SE319460B (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3635683A (en) * | 1968-06-05 | 1972-01-18 | Texas Instruments Inc | Method of crystal growth by vapor deposition |
| US3696779A (en) * | 1969-12-29 | 1972-10-10 | Kokusai Electric Co Ltd | Vapor growth device |
| DE2033444C3 (de) * | 1970-07-06 | 1979-02-15 | Siemens Ag | Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial |
| US4062318A (en) * | 1976-11-19 | 1977-12-13 | Rca Corporation | Apparatus for chemical vapor deposition |
| FR2573325B1 (fr) * | 1984-11-16 | 1993-08-20 | Sony Corp | Appareil et procede pour faire des depots de vapeur sur des plaquettes |
| US4649859A (en) * | 1985-02-19 | 1987-03-17 | The United States Of America As Represented By The United States Department Of Energy | Reactor design for uniform chemical vapor deposition-grown films without substrate rotation |
| US5414927A (en) * | 1993-03-30 | 1995-05-16 | Union Oil Co | Furnace elements made from graphite sheets |
| DE69810969T2 (de) * | 1998-02-24 | 2003-08-07 | Aixtron Ag | Anordnung für die obere wandung eines reaktors für epitaxisches wachstum |
| KR100319891B1 (ko) * | 1999-06-29 | 2002-01-10 | 윤종용 | 웨이퍼용 열처리 방법 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2631948A (en) * | 1949-05-23 | 1953-03-17 | Ohio Commw Eng Co | Method and apparatus for gas plating |
| US2887088A (en) * | 1954-08-16 | 1959-05-19 | Ohio Commw Eng Co | Apparatus for gaseous metal plating fibers |
| NL238464A (de) * | 1958-05-29 | |||
| NL256255A (de) * | 1959-11-02 | |||
| NL271345A (de) * | 1960-11-30 | |||
| NL270518A (de) * | 1960-11-30 | |||
| US3233578A (en) * | 1962-04-23 | 1966-02-08 | Capita Emil Robert | Apparatus for vapor plating |
| US3301213A (en) * | 1962-10-23 | 1967-01-31 | Ibm | Epitaxial reactor apparatus |
| US3381114A (en) * | 1963-12-28 | 1968-04-30 | Nippon Electric Co | Device for manufacturing epitaxial crystals |
-
1965
- 1965-01-29 DE DES95244A patent/DE1297086B/de not_active Withdrawn
- 1965-12-31 NL NL6517274A patent/NL6517274A/xx unknown
-
1966
- 1966-01-26 US US523233A patent/US3472684A/en not_active Expired - Lifetime
- 1966-01-27 AT AT76466A patent/AT256940B/de active
- 1966-01-27 CH CH112666A patent/CH457374A/de unknown
- 1966-01-28 SE SE1159/66A patent/SE319460B/xx unknown
- 1966-01-31 GB GB4162/66A patent/GB1124330A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH457374A (de) | 1968-06-15 |
| GB1124330A (en) | 1968-08-21 |
| DE1297086B (de) | 1969-06-12 |
| US3472684A (en) | 1969-10-14 |
| AT256940B (de) | 1967-09-11 |
| NL6517274A (de) | 1966-08-01 |