DE69810969T2 - Anordnung für die obere wandung eines reaktors für epitaxisches wachstum - Google Patents

Anordnung für die obere wandung eines reaktors für epitaxisches wachstum

Info

Publication number
DE69810969T2
DE69810969T2 DE69810969T DE69810969T DE69810969T2 DE 69810969 T2 DE69810969 T2 DE 69810969T2 DE 69810969 T DE69810969 T DE 69810969T DE 69810969 T DE69810969 T DE 69810969T DE 69810969 T2 DE69810969 T2 DE 69810969T2
Authority
DE
Germany
Prior art keywords
reactor
arrangement
top wall
epitaxic
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69810969T
Other languages
English (en)
Other versions
DE69810969D1 (de
Inventor
A Burk
M Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of DE69810969D1 publication Critical patent/DE69810969D1/de
Application granted granted Critical
Publication of DE69810969T2 publication Critical patent/DE69810969T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69810969T 1998-02-24 1998-02-24 Anordnung für die obere wandung eines reaktors für epitaxisches wachstum Expired - Lifetime DE69810969T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1998/003555 WO1999043874A1 (en) 1998-02-24 1998-02-24 Ceiling arrangement for an epitaxial growth reactor

Publications (2)

Publication Number Publication Date
DE69810969D1 DE69810969D1 (de) 2003-02-27
DE69810969T2 true DE69810969T2 (de) 2003-08-07

Family

ID=22266450

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69810969T Expired - Lifetime DE69810969T2 (de) 1998-02-24 1998-02-24 Anordnung für die obere wandung eines reaktors für epitaxisches wachstum

Country Status (3)

Country Link
EP (1) EP1060301B1 (de)
DE (1) DE69810969T2 (de)
WO (1) WO1999043874A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10043601A1 (de) * 2000-09-01 2002-03-14 Aixtron Ag Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
DE10055033A1 (de) 2000-11-07 2002-05-08 Aixtron Ag CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor
US9612215B2 (en) 2004-07-22 2017-04-04 Toyo Tanso Co., Ltd. Susceptor
ITMI20050962A1 (it) * 2005-05-25 2006-11-26 Lpe Spa Dispositivo per introurre gas di reazione in una camera di reazione e reattore epitassiale che lo utilizza
DE102009043848A1 (de) 2009-08-25 2011-03-03 Aixtron Ag CVD-Verfahren und CVD-Reaktor
JP5933202B2 (ja) 2011-08-05 2016-06-08 昭和電工株式会社 エピタキシャルウェハの製造装置及び製造方法
JP5865625B2 (ja) 2011-08-05 2016-02-17 昭和電工株式会社 エピタキシャルウェハの製造装置及び製造方法
DE102014109327A1 (de) 2014-07-03 2016-01-07 Aixtron Se Beschichtetes flaches scheibenförmiges Bauteil in einem CVD-Reaktor
CN104538289A (zh) * 2014-12-17 2015-04-22 中国科学院半导体研究所 一种多片碳化硅半导体材料制造装置
CN106350864B (zh) * 2015-07-17 2019-10-18 中国科学院苏州纳米技术与纳米仿生研究所 一种碳化硅外延生长的喷淋装置及碳化硅生长工艺方法
DE102019117479A1 (de) 2019-06-28 2020-12-31 Aixtron Se In einem CVD-Reaktor verwendbares flaches Bauteil

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1056430A (en) * 1962-11-13 1967-01-25 Texas Instruments Inc Epitaxial process and apparatus for semiconductors
DE1297086B (de) * 1965-01-29 1969-06-12 Siemens Ag Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial
US4926793A (en) * 1986-12-15 1990-05-22 Shin-Etsu Handotai Co., Ltd. Method of forming thin film and apparatus therefor

Also Published As

Publication number Publication date
EP1060301A1 (de) 2000-12-20
DE69810969D1 (de) 2003-02-27
EP1060301B1 (de) 2003-01-22
WO1999043874A1 (en) 1999-09-02

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Legal Events

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8327 Change in the person/name/address of the patent owner

Owner name: AIXTRON AG, 52134 HERZOGENRATH, DE

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