SE317137B - - Google Patents

Info

Publication number
SE317137B
SE317137B SE10170/67*A SE1017067A SE317137B SE 317137 B SE317137 B SE 317137B SE 1017067 A SE1017067 A SE 1017067A SE 317137 B SE317137 B SE 317137B
Authority
SE
Sweden
Application number
SE10170/67*A
Inventor
W Witt
F Huber
W Laznovsky
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE317137B publication Critical patent/SE317137B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SE10170/67*A 1966-08-04 1967-06-30 SE317137B (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57025666A 1966-08-04 1966-08-04

Publications (1)

Publication Number Publication Date
SE317137B true SE317137B (enrdf_load_stackoverflow) 1969-11-10

Family

ID=24278891

Family Applications (1)

Application Number Title Priority Date Filing Date
SE10170/67*A SE317137B (enrdf_load_stackoverflow) 1966-08-04 1967-06-30

Country Status (5)

Country Link
DE (1) DE1614382B2 (enrdf_load_stackoverflow)
ES (1) ES343726A1 (enrdf_load_stackoverflow)
GB (1) GB1178869A (enrdf_load_stackoverflow)
NL (1) NL6710714A (enrdf_load_stackoverflow)
SE (1) SE317137B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2527385B1 (fr) * 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
GB2140203B (en) * 1983-03-15 1987-01-14 Canon Kk Thin film transistor with wiring layer continuous with the source and drain

Also Published As

Publication number Publication date
NL6710714A (enrdf_load_stackoverflow) 1968-02-05
ES343726A1 (es) 1968-10-01
DE1614382A1 (de) 1970-05-27
DE1614382B2 (de) 1971-07-08
GB1178869A (en) 1970-01-21

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