GB1178869A - Improved Polycrystalline Field Effect Device and Methods of Manufacture thereof - Google Patents

Improved Polycrystalline Field Effect Device and Methods of Manufacture thereof

Info

Publication number
GB1178869A
GB1178869A GB32369/67A GB3236967A GB1178869A GB 1178869 A GB1178869 A GB 1178869A GB 32369/67 A GB32369/67 A GB 32369/67A GB 3236967 A GB3236967 A GB 3236967A GB 1178869 A GB1178869 A GB 1178869A
Authority
GB
United Kingdom
Prior art keywords
cadmium
aluminium
silicon
semi
zinc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32369/67A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1178869A publication Critical patent/GB1178869A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB32369/67A 1966-08-04 1967-07-13 Improved Polycrystalline Field Effect Device and Methods of Manufacture thereof Expired GB1178869A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US57025666A 1966-08-04 1966-08-04

Publications (1)

Publication Number Publication Date
GB1178869A true GB1178869A (en) 1970-01-21

Family

ID=24278891

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32369/67A Expired GB1178869A (en) 1966-08-04 1967-07-13 Improved Polycrystalline Field Effect Device and Methods of Manufacture thereof

Country Status (5)

Country Link
DE (1) DE1614382B2 (enrdf_load_stackoverflow)
ES (1) ES343726A1 (enrdf_load_stackoverflow)
GB (1) GB1178869A (enrdf_load_stackoverflow)
NL (1) NL6710714A (enrdf_load_stackoverflow)
SE (1) SE317137B (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2118365A (en) * 1982-04-13 1983-10-26 Suwa Seikosha Kk A thin film MOS transistor and an active matrix liquid crystal display device
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140203B (en) * 1983-03-15 1987-01-14 Canon Kk Thin film transistor with wiring layer continuous with the source and drain

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2118365A (en) * 1982-04-13 1983-10-26 Suwa Seikosha Kk A thin film MOS transistor and an active matrix liquid crystal display device
US5124768A (en) * 1982-04-13 1992-06-23 Seiko Epson Corporation Thin film transistor and active matrix assembly including same
US5294555A (en) * 1982-04-13 1994-03-15 Seiko Epson Corporation Method of manufacturing thin film transistor and active matrix assembly including same
US5554861A (en) * 1982-04-13 1996-09-10 Seiko Epson Corporation Thin film transistors and active matrices including the same
US5698864A (en) * 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
US5736751A (en) * 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
US6242777B1 (en) 1982-04-13 2001-06-05 Seiko Epson Corporation Field effect transistor and liquid crystal devices including the same
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same

Also Published As

Publication number Publication date
ES343726A1 (es) 1968-10-01
DE1614382A1 (de) 1970-05-27
DE1614382B2 (de) 1971-07-08
SE317137B (enrdf_load_stackoverflow) 1969-11-10
NL6710714A (enrdf_load_stackoverflow) 1968-02-05

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