SE196372C1 - Förfarande vid tillverkning av halvledaranordning - Google Patents

Förfarande vid tillverkning av halvledaranordning

Info

Publication number
SE196372C1
SE196372C1 SE145358A SE145358A SE196372C1 SE 196372 C1 SE196372 C1 SE 196372C1 SE 145358 A SE145358 A SE 145358A SE 145358 A SE145358 A SE 145358A SE 196372 C1 SE196372 C1 SE 196372C1
Authority
SE
Sweden
Prior art keywords
semiconductor device
manufacturing semiconductor
manufacturing
semiconductor
Prior art date
Application number
SE145358A
Other languages
English (en)
Swedish (sv)
Inventor
John Roschen
Original Assignee
Philco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philco Corp filed Critical Philco Corp
Publication of SE196372C1 publication Critical patent/SE196372C1/sv

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R13/00—Arrangements for displaying electric variables or waveforms
    • G01R13/20—Cathode-ray oscilloscopes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R21/00—Arrangements for measuring electric power or power factor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/78—Tubes with electron stream modulated by deflection in a resonator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/70—Arrangements for deflecting ray or beam
    • H01J29/78—Arrangements for deflecting ray or beam along a circle, spiral or rotating radial line, e.g. for radar display
    • H01L21/288—
    • H01L21/67138—
    • H01L23/36—
    • H01L24/80—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/06—Cavity resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/01—Generation of oscillations using transit-time effects using discharge tubes
    • H03B9/02—Generation of oscillations using transit-time effects using discharge tubes using a retarding-field tube
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0444—Apparatus for wiring semiconductor or solid-state device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
SE145358A 1957-02-25 1958-02-14 Förfarande vid tillverkning av halvledaranordning SE196372C1 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US641805A US2906647A (en) 1957-02-25 1957-02-25 Method of treating semiconductor devices

Publications (1)

Publication Number Publication Date
SE196372C1 true SE196372C1 (sv) 1965-05-25

Family

ID=24573922

Family Applications (1)

Application Number Title Priority Date Filing Date
SE145358A SE196372C1 (sv) 1957-02-25 1958-02-14 Förfarande vid tillverkning av halvledaranordning

Country Status (6)

Country Link
US (1) US2906647A (en:Method)
BE (1) BE563088A (en:Method)
DE (1) DE1090327B (en:Method)
FR (1) FR1186652A (en:Method)
GB (1) GB838890A (en:Method)
SE (1) SE196372C1 (en:Method)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2962394A (en) * 1957-06-20 1960-11-29 Motorola Inc Process for plating a silicon base semiconductive unit with nickel
NL235544A (en:Method) * 1958-01-28
US3132419A (en) * 1959-06-06 1964-05-12 Takikawa Teizo Method for soldering silicon or a silicon alloy to a diefferent metal
GB917517A (en) * 1960-03-11 1963-02-06 Clevite Corp Method for providing contacts on semiconductor devices
NL269092A (en:Method) * 1960-09-09 1900-01-01
DE1123406B (de) * 1960-09-27 1962-02-08 Telefunken Patent Verfahren zur Herstellung von legierten Halbleiteranordnungen
DE1150454B (de) * 1960-11-14 1963-06-20 Licentia Gmbh Verfahren zum Herstellen von pn-UEbergaengen in Siliziumscheiben
US3164464A (en) * 1961-01-09 1965-01-05 Dow Chemical Co Method of introducing magnesium into galvanizing baths
US3192081A (en) * 1961-07-20 1965-06-29 Raytheon Co Method of fusing material and the like
NL286507A (en:Method) * 1961-12-11
DE1231814B (de) * 1962-03-03 1967-01-05 Siemens Ag Verfahren zur Herstellung eines p-dotierten Bereiches in Halbleiterkoerpern
US3294600A (en) * 1962-11-26 1966-12-27 Nippon Electric Co Method of manufacture of semiconductor elements
US3200490A (en) * 1962-12-07 1965-08-17 Philco Corp Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials
US3237138A (en) * 1963-09-03 1966-02-22 Rosemount Eng Co Ltd Integral strain transducer
US3426422A (en) * 1965-10-23 1969-02-11 Fairchild Camera Instr Co Method of making stable semiconductor devices
US4372996A (en) * 1972-05-09 1983-02-08 Massachusetts Institute Of Technology Method for metallizing aluminum pads of an integrated circuit chip

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2169098A (en) * 1937-06-19 1939-08-08 Gen Electric Method for soft soldering alloys containing aluminum
US2662957A (en) * 1949-10-29 1953-12-15 Eisler Paul Electrical resistor or semiconductor
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2757104A (en) * 1953-04-15 1956-07-31 Metalholm Engineering Corp Process of forming precision resistor
US2781577A (en) * 1953-08-28 1957-02-19 Sheffield Smelting Company Ltd Method of making corrosion resistant soldered joints
BE532590A (en:Method) * 1953-10-16 1900-01-01

Also Published As

Publication number Publication date
DE1090327B (de) 1960-10-06
US2906647A (en) 1959-09-29
BE563088A (en:Method)
FR1186652A (fr) 1959-08-31
GB838890A (en) 1960-06-22

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