SE186712C1 - - Google Patents
Info
- Publication number
- SE186712C1 SE186712C1 SE186712DA SE186712C1 SE 186712 C1 SE186712 C1 SE 186712C1 SE 186712D A SE186712D A SE 186712DA SE 186712 C1 SE186712 C1 SE 186712C1
- Authority
- SE
- Sweden
- Prior art keywords
- magnetic layer
- magnetic
- field
- storage device
- memory cell
- Prior art date
Links
- 230000015654 memory Effects 0.000 claims description 116
- 210000004027 cell Anatomy 0.000 claims description 107
- 239000004020 conductor Substances 0.000 claims description 68
- 210000000352 storage cell Anatomy 0.000 claims description 57
- 230000005415 magnetization Effects 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 47
- 230000008878 coupling Effects 0.000 claims description 24
- 238000010168 coupling process Methods 0.000 claims description 24
- 238000005859 coupling reaction Methods 0.000 claims description 24
- 239000011159 matrix material Substances 0.000 claims description 22
- 238000006073 displacement reaction Methods 0.000 claims description 10
- 230000002427 irreversible effect Effects 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 7
- 230000004907 flux Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 235000015115 caffè latte Nutrition 0.000 claims 1
- 238000009795 derivation Methods 0.000 claims 1
- 230000002496 gastric effect Effects 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 claims 1
- 230000035800 maturation Effects 0.000 claims 1
- 239000013598 vector Substances 0.000 description 21
- 230000005284 excitation Effects 0.000 description 10
- 230000002441 reversible effect Effects 0.000 description 10
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 240000009023 Myrrhis odorata Species 0.000 description 2
- 235000007265 Myrrhis odorata Nutrition 0.000 description 2
- 235000012550 Pimpinella anisum Nutrition 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 240000000491 Corchorus aestuans Species 0.000 description 1
- 235000011777 Corchorus aestuans Nutrition 0.000 description 1
- 235000010862 Corchorus capsularis Nutrition 0.000 description 1
- 241000408659 Darpa Species 0.000 description 1
- 241000630665 Hada Species 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 101500021084 Locusta migratoria 5 kDa peptide Proteins 0.000 description 1
- 241000218657 Picea Species 0.000 description 1
- 241000219492 Quercus Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 241001584775 Tunga penetrans Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 235000013490 limbo Nutrition 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003340 mental effect Effects 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE186712T |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE186712C1 true SE186712C1 (show.php) | 1963-01-01 |
Family
ID=41973957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE186712D SE186712C1 (show.php) |
Country Status (1)
| Country | Link |
|---|---|
| SE (1) | SE186712C1 (show.php) |
-
0
- SE SE186712D patent/SE186712C1/sv unknown
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