SE100881C1 - - Google Patents

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Publication number
SE100881C1
SE100881C1 SE229340A SE229340A SE100881C1 SE 100881 C1 SE100881 C1 SE 100881C1 SE 229340 A SE229340 A SE 229340A SE 229340 A SE229340 A SE 229340A SE 100881 C1 SE100881 C1 SE 100881C1
Authority
SE
Sweden
Prior art keywords
selenium
chlorine
addition
additives
bromine
Prior art date
Application number
SE229340A
Other languages
Swedish (sv)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of SE100881C1 publication Critical patent/SE100881C1/sv

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/08—Preparation of the foundation plate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/103—Conversion of the selenium or tellurium to the conductive state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thermistors And Varistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Catalysts (AREA)
  • Elimination Of Static Electricity (AREA)

Claims (1)

1. Patentansprak: 1:o) Elektrisk halvledare av selen, sSrskilt fOr torrlikriktare, lanneteeknad ddrav, alt selenen innehUler selenklorur eller selenbromur eller ladda eller ett .sadant drane, som fdretradesvis yid hojd temperatar genom en kemisk reaktion med selen bildar selenklorur eller selenbromur. 0,3 Tillsatser % Ser,C19 Omv. 1h150° C. Ohm. cm. 500 0,3 % Se:201; + 0.3 % S 100 0,3 % SeCI + 0,3 % S+0, 03% Te . 0,3 Se2C12 + 0,3 % S+ 0,0% Ti . 6 0,3 % Se2C12 + 0,3 % S +0,015 % T1+ Me-taller . . Autimon . . Vism-at . . . Team . . . . Tellur . . Tallium . . Cerium . . Jana . . . 0,8 % tillsats spec. motstand 80 110 70 45 120 23 37 0,08 % tillsats spec. motsth'nd 1 4 18 7 200 Medan alltsa, vid tillsattning av frammande element till selenklorurfri ,selen det specifika motstanclet stiger starkt och selenen ph grand ddray 4r praktiskt taget obrukbar for framstd11- ning ay torrlikriktare, erhalles mid narvaro av selenklorur mid nagra av namnda element ett alldeles -atmarkt gynnsamt inflytande ph minskningen ay selenens specifika rnotstand. Motstandet minskar darvid delvis fingt under det varde, som kan uppnhs yid renaste selen med klorurtillsats enligt uppfinningen; I. ex. „giver en tillsats av 0,3 % jam alt motstindsvarde air 37 ohm, cm., ay 0,3 % cerium 23 ohm. cm. och ay 0,03 % tellur t. o. m. end.ast 20 ohm. cm. Dessa varden ph det specifika motsta,ndet ligga en full storleksordning lagre an de hittills med renaste rselen och nahttlig selenklorurtillsats uppnheliga varclena. Dartill kommer, alt evannAnanda metalltillsatser forlana selenen en ytterligare, mid framstallning ay selenlikriktare ,sarskilt gynnsam egenskap. Medan man namligen mid men selen for all uppna, mtijligast stor ledningsformaga .maste foretag,a omvandlingen fain den amorf a till den kristalliniska, formen mid ungefar 210° — — 2:o) Elektrisk halvledare enligt patentansprfiket 1:o), kanneteeknad darav, att selenen innehaller tillsatserna i en totalmEngd cm 0,01 —1 %, foretradesvis DM%. 3:o) Elektrisk halvledare enligt .patentanspraken 1:o) och 2:o), kannetecknad dErav, att del selenen tillsatta mnet, ,som fOretrEdesvis viii hojd temperatur genom en kemisk reaktion med selen bildar selenklorur eller selenbromur, bestfir av en joke metallisk forening, foretrEdesvis svavelklorur. 4:o) Forfaringssatt for framstEllning air ett halvledarskikt enligt patentansprfiken 1:o), 2:o) och 3:o), kannetecknat dErav, att serna tillsEttas selenen fore dess formgivning, t. ex. vid likriktare fore pfi,forandet pa, undellaget. 5:o) Forfaringssatt for framstallning av en halvledare enligt patentansprfiken 1:o)-3:o), kEnnetecknat dOrav, att tillsatserna Oro framstallda IA, vat vEg i majligast rem form, sErskilt utan fororening genom de motsvarande kloriderna eller bromiderna. 6:o) ForfaringssEtt for framstEllning av en elektrisk halvledare enligt patentansprfiket 1:o), kannetecknat dErav, att den termiska omvandlingen av del rued tillsatserna, forsatta selenskiktet sker vid en temperatur under 175°, foretrEdesvis vid c :a 150-170°. 7:o) Torrlikriktare med en bErelektrod av lattmetall, sOrskilt aluminium, med anvEndning av en halvledare enligt patentansprEken 1:o)— 3:o). 8:o) Elektrisk halvleclare av selen, isarskilt for torrlikriktare, med en tillsats av selenklorur ochjeller selenbromur enligt patentansprfiket 1:o), kannetecknad darav, att selenen forutom selenklorur- eller selenbromurtillsatsen innehaller en eller flera metaller, sarskilt antimon, vismut, tenn, tellur, tallium, cerium eller jam, i ringa mangd, foretrEd.esvis i elemental. form. 9:o) Elektrisk halvledare enligt patentanspr8,- ket 8:o), kannetecknad darav, att totalmangden metalltillsatser uppgEr till 0,01-1 %. 10:o) Elektrisk halvledare enligt patentansprfiket 8:o) eller 9:o), kEnnetecknad dErav, att forutom en eller flera av naninda metaller Er tillsatt Even en ringa mEngd, fOretradesvis 0,3 % ,svavel. 11:o) Forfaringssatt for framstEllning av en elektrisk halvledare air en av en eller flera me-taller, sErskilt av antimon, vismut, lean, tallium, cerium, jam n och/eller arsenik fororenad selen, sarskilt for torrlikriktare, kEnnetecknat ddrav, att den 'av de fOrhandenvarande fOroreningarna betingade ringa leclningsform&gan hos iselenen okas genom tillsats av 'selenklorur °eh/ eller selenbromur enligt patentansprfiket 1:o). Stockholm 1941. Kungl. Polar. P. A. Norstelt & Stiner 410089Patent claim: 1: o) Electrical semiconductor of selenium, especially for dry rectifiers, lanneteeknad ddrav, all selenium contains selenium chlorine or selenium bromine wall or charge or a .sadant drane, which fdretradesvis yid high temperature by a chemical reaction with selenium or selenium. 0.3 Additives% Ser, C19 Rev. 1h150 ° C. Ohm. cm. 500 0.3% Se: 201; + 0.3% S 100 0.3% SeCl + 0.3% S + 0.3% Te. 0.3 Se 2 Cl 2 + 0.3% S + 0.0% Ti. 6 0.3% Se2Cl2 + 0.3% S +0.015% T1 + Metals. . Autimon. . Vism-at. . . Team. . . . Tells. . Tallium. . Cerium. . Jana. . . 0.8% additive spec. resistance 80 110 70 45 120 23 37 0.08% additive spec. resistance 1 4 18 7 200 Thus, when adding foreign elements to selenium chlorine free, selenium the specific resistance rises sharply and selenium ph grand ddray 4r is practically unusable for production ay dry rectifier, mid narvaro of selenium chlorine is obtained by some of the above. element a completely -atmarkt favorable influence ph the decrease ay selenene's specific rnotstand. The resistance is thereby partially reduced slightly below the value which can be obtained by the purest selenium with chlorine addition according to the invention; I. ex. „Gives an addition of 0.3% jam alt resistance air 37 ohm, cm., Ay 0.3% cerium 23 ohm. cm. and ay 0.03% count up to and including 20 ohms. cm. These values of the specific resistance are a full order of magnitude lower than those hitherto available with the purest iron and natural selenium chlorine additive. In addition, all evannAnanda metal additives impart to the selenium an additional, mid-production a selenium rectifier, particularly favorable property. While the selenium for all obtained, most likely large-scale wiring .mast undertaking, the conversion fain the amorphous a to the crystalline, the form mid about 210 ° - - 2: o) Electrical semiconductor according to patent claim 1: o), can be drawn thereof that selenium contains the additives in a total amount cm 0.01 - 1%, preferably DM%. 3: o) Electric semiconductor according to the patent claims 1: o) and 2: o), characterized in that part of the selenium added mnet, which preferably viii high temperature by a chemical reaction with selenium forms selenium chlorine or selenium bromine wall, consists of a joke metallic association, preferably sulfur chlorine. 4: o) Procedure for the production of a semiconductor layer according to patent claims 1: o), 2: o) and 3: o), can be drawn from the fact that the sera are added to the selenium before its design, e.g. vid rectifier fore pfi, forandet pa, undellaget. 5: o) Procedure for the production of a semiconductor according to patent specification 1: o) -3: o), characterized in that the additives Oro produced in IA, were in the most abundant strip form, especially without contamination by the corresponding chlorides or bromides. 6: o) Procedure for manufacturing an electrical semiconductor according to patent claim 1: o), characterized in that the thermal conversion of the del rued additives, continued selenium layer takes place at a temperature below 175 °, preferably at about 150-170 °. 7: o) Dry rectifier with a light metal bearing electrode, especially aluminum, using a semiconductor according to patent claims 1: o) - 3: o). 8: o) Electric semiconductor of selenium, especially for dry rectifiers, with an addition of selenium chlorine and / or selenium bromine according to patent specification 1: o), characterized in that the selenium in addition to the selenium chlorine or selenium bromine additive contains one or more metals, especially antennas, tin, antimony, tellurium, thallium, cerium or jam, in small quantities, preferably in elemental. form. 9: o) Electrical semiconductor according to patent claim 8, - ket 8: o), can be characterized by the fact that the total amount of metal additives amounts to 0.01-1%. 10: o) Electrical semiconductor according to patent specification 8: o) or 9: o), characterized in that in addition to one or more of naninda metals you have added a small amount, preferably 0.3%, of sulfur. 11: o) Procedure for the manufacture of an electrical semiconductor air one of one or more metals, in particular of antimony, bismuth, lean, thallium, cerium, jam n and / or arsenic contaminated selenium, especially for dry rectifiers, characterized by ddrav, that the low leakage form of the ice selenium due to the present compounds is increased by the addition of selenium chlorine and / or selenium bromine according to patent claim 1: o). Stockholm 1941. Kungl. Polar. P. A. Norstelt & Stiner 410089
SE229340A 1939-07-01 1940-06-20 SE100881C1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES137678D DE742935C (en) 1939-07-01 1939-07-01 Electrical semiconductor made from selenium, especially for dry rectifiers
DES8687D DE895339C (en) 1939-07-01 1940-06-16 Electrical semiconductor made from selenium, especially for dry rectifiers

Publications (1)

Publication Number Publication Date
SE100881C1 true SE100881C1 (en) 1941-02-18

Family

ID=25994794

Family Applications (1)

Application Number Title Priority Date Filing Date
SE229340A SE100881C1 (en) 1939-07-01 1940-06-20

Country Status (6)

Country Link
US (1) US2316905A (en)
BE (1) BE439047A (en)
CH (1) CH225868A (en)
DE (2) DE742935C (en)
FR (1) FR872709A (en)
SE (1) SE100881C1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE961365C (en) * 1941-12-13 1957-04-04 Siemens Ag Electrical semiconductor made from selenium, especially for dry rectifiers
DE975018C (en) * 1952-07-17 1961-07-06 Siemens Ag Process for the manufacture of selenium rectifiers

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE967323C (en) * 1943-08-06 1957-11-07 Siemens Ag Process for the production of selenium rectifiers, the top electrode of which is thallium added in small quantities
US2447630A (en) * 1943-11-10 1948-08-24 Westinghouse Electric Corp Method of making selenium rectifiers
DE970124C (en) * 1944-01-17 1958-09-04 Siemens Ag Process for the manufacture of selenium rectifiers
US2462949A (en) * 1944-05-24 1949-03-01 Hartford Nat Bank & Trust Co Method of treating selenium
DE924875C (en) * 1944-06-10 1955-03-10 Siemens Ag Selenium rectifier with high thermal load capacity
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
BE463238A (en) * 1944-11-20
US2450886A (en) * 1944-11-20 1948-10-12 Standard Telephones Cables Ltd Semiconductor
DE971697C (en) * 1948-10-01 1959-03-12 Siemens Ag Process for the manufacture of selenium rectifiers
NL153851B (en) * 1949-05-30 Lonza Ag PROCESS FOR THE PREPARATION OF METHACRYLIC ACID FROM ALPHA-HYDROXYISOBUTIC ACID.
DE973817C (en) * 1951-03-05 1960-06-15 Licentia Gmbh Method of manufacturing a dry rectifier
NL169311B (en) * 1951-05-05 Ici Ltd PROCESS FOR PREPARING A HYDROXYL GROUP CONTAINING PHENYLSULPHONYL-4-HALOGENEBENZENE SUBSTITUTED AT THE 4' PLACE AND METHOD FOR PREPARING POLYMERS CONTAINING ETHER BONDS CONTAINING 4'-PHENYLSULPHONYL-4-PHENYLENE UNITS.
NL178572B (en) * 1952-06-19 Vaw Ver Aluminium Werke Ag METHOD FOR THE FLUID-FREE SOLDERING OF ALUMINUM MATERIALS.
DE1060053B (en) * 1953-02-10 1959-06-25 Siemens Ag Process for the production of selenium rectifiers with a multilayer semiconductor with different halogen contents and electropositive additives in the individual layers
DE1156897B (en) * 1954-03-27 1963-11-07 Siemens Ag Selenium rectifier in which the selenium layer is made up of at least two sub-layers with different additive content
NL92960C (en) * 1955-02-07 1900-01-01
DE1125080B (en) * 1960-05-02 1962-03-08 Licentia Gmbh Process for the production of selenium dry rectifiers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL52391C (en) * 1936-08-13 1900-01-01

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE961365C (en) * 1941-12-13 1957-04-04 Siemens Ag Electrical semiconductor made from selenium, especially for dry rectifiers
DE975018C (en) * 1952-07-17 1961-07-06 Siemens Ag Process for the manufacture of selenium rectifiers

Also Published As

Publication number Publication date
DE895339C (en) 1953-11-02
US2316905A (en) 1943-04-20
CH225868A (en) 1943-02-28
FR872709A (en) 1942-06-17
DE742935C (en) 1943-12-15
BE439047A (en) 1940-09-30

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