SE0004614D0 - Shielded inductor - Google Patents
Shielded inductorInfo
- Publication number
- SE0004614D0 SE0004614D0 SE0004614A SE0004614A SE0004614D0 SE 0004614 D0 SE0004614 D0 SE 0004614D0 SE 0004614 A SE0004614 A SE 0004614A SE 0004614 A SE0004614 A SE 0004614A SE 0004614 D0 SE0004614 D0 SE 0004614D0
- Authority
- SE
- Sweden
- Prior art keywords
- substrate
- inductor
- contacts
- electrically
- islands
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
An integrated circuit comprises an inductor path (17) formed in a metal layer located in a surface structure on top of an electrically well conducting substrate (7). Trenches (1) filled with an electrically isolating material are located under the inductor path and are arranged in a meshlike or grid pattern. In order to improve the shielding of the inductor path and to simultaneously improve the Q-value of the inductor, in the islands (5) of material formed in the surface structure between the meshes of the pattern deep substrate contacts (11) are located. The substrate contacts extend down into the substrate and the substrate and the contacts are intended to be connected to ground potential. Electrically conducting areas (13) can cover the islands and are then connected to the substrate contacts.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0004614A SE520093C2 (en) | 2000-12-13 | 2000-12-13 | Shielded inductor |
TW090103022A TW518619B (en) | 2000-12-13 | 2001-02-12 | Integrated circuit |
AU2002222870A AU2002222870A1 (en) | 2000-12-13 | 2001-12-13 | Shielded inductor |
PCT/SE2001/002768 WO2002049110A1 (en) | 2000-12-13 | 2001-12-13 | Shielded inductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0004614A SE520093C2 (en) | 2000-12-13 | 2000-12-13 | Shielded inductor |
Publications (3)
Publication Number | Publication Date |
---|---|
SE0004614D0 true SE0004614D0 (en) | 2000-12-13 |
SE0004614L SE0004614L (en) | 2002-06-14 |
SE520093C2 SE520093C2 (en) | 2003-05-27 |
Family
ID=20282217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0004614A SE520093C2 (en) | 2000-12-13 | 2000-12-13 | Shielded inductor |
Country Status (4)
Country | Link |
---|---|
AU (1) | AU2002222870A1 (en) |
SE (1) | SE520093C2 (en) |
TW (1) | TW518619B (en) |
WO (1) | WO2002049110A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050247999A1 (en) * | 2003-05-29 | 2005-11-10 | Kazuyasu Nishikawa | Semiconductor device |
US6833603B1 (en) | 2003-08-11 | 2004-12-21 | International Business Machines Corporation | Dynamically patterned shielded high-Q inductor |
US8084829B2 (en) | 2004-04-27 | 2011-12-27 | Nxp B.V. | Semiconductors device and method of manufacturing such a device |
US7268409B2 (en) | 2004-05-21 | 2007-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spiral inductor with electrically controllable resistivity of silicon substrate layer |
US7247922B2 (en) | 2004-09-24 | 2007-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inductor energy loss reduction techniques |
US10217703B2 (en) * | 2017-01-03 | 2019-02-26 | Xilinx, Inc. | Circuits for and methods of implementing an inductor and a pattern ground shield in an integrated circuit |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3592505B2 (en) * | 1997-11-10 | 2004-11-24 | 松下電器産業株式会社 | Manufacturing method of inductor element |
TW363278B (en) * | 1998-01-16 | 1999-07-01 | Winbond Electronics Corp | Preparation method for semiconductor to increase the inductive resonance frequency and Q value |
US6310387B1 (en) * | 1999-05-03 | 2001-10-30 | Silicon Wave, Inc. | Integrated circuit inductor with high self-resonance frequency |
US6140197A (en) * | 1999-08-30 | 2000-10-31 | Chartered Semiconductor Manufacturing Ltd. | Method of making spiral-type RF inductors having a high quality factor (Q) |
-
2000
- 2000-12-13 SE SE0004614A patent/SE520093C2/en not_active IP Right Cessation
-
2001
- 2001-02-12 TW TW090103022A patent/TW518619B/en not_active IP Right Cessation
- 2001-12-13 WO PCT/SE2001/002768 patent/WO2002049110A1/en not_active Application Discontinuation
- 2001-12-13 AU AU2002222870A patent/AU2002222870A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
SE520093C2 (en) | 2003-05-27 |
TW518619B (en) | 2003-01-21 |
SE0004614L (en) | 2002-06-14 |
WO2002049110A1 (en) | 2002-06-20 |
AU2002222870A1 (en) | 2002-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |