AU2002222870A1 - Shielded inductor - Google Patents

Shielded inductor

Info

Publication number
AU2002222870A1
AU2002222870A1 AU2002222870A AU2287002A AU2002222870A1 AU 2002222870 A1 AU2002222870 A1 AU 2002222870A1 AU 2002222870 A AU2002222870 A AU 2002222870A AU 2287002 A AU2287002 A AU 2287002A AU 2002222870 A1 AU2002222870 A1 AU 2002222870A1
Authority
AU
Australia
Prior art keywords
shielded inductor
shielded
inductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002222870A
Inventor
Mats Carlsson
Ted Johansson
Hans Norstrom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of AU2002222870A1 publication Critical patent/AU2002222870A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AU2002222870A 2000-12-13 2001-12-13 Shielded inductor Abandoned AU2002222870A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0004614A SE520093C2 (en) 2000-12-13 2000-12-13 Shielded inductor
SE0004614 2000-12-13
PCT/SE2001/002768 WO2002049110A1 (en) 2000-12-13 2001-12-13 Shielded inductor

Publications (1)

Publication Number Publication Date
AU2002222870A1 true AU2002222870A1 (en) 2002-06-24

Family

ID=20282217

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002222870A Abandoned AU2002222870A1 (en) 2000-12-13 2001-12-13 Shielded inductor

Country Status (4)

Country Link
AU (1) AU2002222870A1 (en)
SE (1) SE520093C2 (en)
TW (1) TW518619B (en)
WO (1) WO2002049110A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60317905T2 (en) * 2003-05-29 2008-11-13 Mitsubishi Denki K.K. SEMICONDUCTOR COMPONENT
US6833603B1 (en) 2003-08-11 2004-12-21 International Business Machines Corporation Dynamically patterned shielded high-Q inductor
DE602005022428D1 (en) * 2004-04-27 2010-09-02 Nxp Bv SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING SUCH A COMPONENT
US7268409B2 (en) 2004-05-21 2007-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Spiral inductor with electrically controllable resistivity of silicon substrate layer
US7247922B2 (en) 2004-09-24 2007-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Inductor energy loss reduction techniques
US10217703B2 (en) * 2017-01-03 2019-02-26 Xilinx, Inc. Circuits for and methods of implementing an inductor and a pattern ground shield in an integrated circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3592505B2 (en) * 1997-11-10 2004-11-24 松下電器産業株式会社 Manufacturing method of inductor element
TW363278B (en) * 1998-01-16 1999-07-01 Winbond Electronics Corp Preparation method for semiconductor to increase the inductive resonance frequency and Q value
US6310387B1 (en) * 1999-05-03 2001-10-30 Silicon Wave, Inc. Integrated circuit inductor with high self-resonance frequency
US6140197A (en) * 1999-08-30 2000-10-31 Chartered Semiconductor Manufacturing Ltd. Method of making spiral-type RF inductors having a high quality factor (Q)

Also Published As

Publication number Publication date
WO2002049110A1 (en) 2002-06-20
TW518619B (en) 2003-01-21
SE0004614L (en) 2002-06-14
SE0004614D0 (en) 2000-12-13
SE520093C2 (en) 2003-05-27

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