SE0001860D0 - A semiconductor device - Google Patents
A semiconductor deviceInfo
- Publication number
- SE0001860D0 SE0001860D0 SE0001860A SE0001860A SE0001860D0 SE 0001860 D0 SE0001860 D0 SE 0001860D0 SE 0001860 A SE0001860 A SE 0001860A SE 0001860 A SE0001860 A SE 0001860A SE 0001860 D0 SE0001860 D0 SE 0001860D0
- Authority
- SE
- Sweden
- Prior art keywords
- layer
- doped
- dopants
- electric field
- semiconductor
- Prior art date
Links
Abstract
A semiconductor device comprises a first doped semiconductor layer (3, 4) and a metal layer (6) forming a Schottky-barrier contact thereto. The first layer is doped by dopants assuming such deep energy levels in the semiconductor material of said layer that the majority thereof will not be thermally activated at the working temperature of the device. A second layer located close to the first layer is doped with dopants of opposite type to that of the first layer and is continuously activated at said working temperature for concentrating electric field to a region between the second layer (12, 13) and a further layer (5) of the device not being said first layer in a forward blocking state of the device while reducing the electric field in said first layer next to said contact.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0001860A SE0001860D0 (en) | 2000-05-22 | 2000-05-22 | A semiconductor device |
| PCT/SE2001/001167 WO2001091187A1 (en) | 2000-05-22 | 2001-05-22 | A semiconductor device |
| AU2001260938A AU2001260938A1 (en) | 2000-05-22 | 2001-05-22 | A semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0001860A SE0001860D0 (en) | 2000-05-22 | 2000-05-22 | A semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE0001860D0 true SE0001860D0 (en) | 2000-05-22 |
Family
ID=20279743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE0001860A SE0001860D0 (en) | 2000-05-22 | 2000-05-22 | A semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2001260938A1 (en) |
| SE (1) | SE0001860D0 (en) |
| WO (1) | WO2001091187A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5060297B2 (en) | 2004-09-10 | 2012-10-31 | エレメント シックス リミテッド | Switching device |
| CN102790077B (en) * | 2012-08-24 | 2014-12-10 | 电子科技大学 | Insulated gate bipolar transistor |
| JP6873926B2 (en) * | 2015-06-09 | 2021-05-19 | アーベーベー・シュバイツ・アーゲーＡＢＢ Ｓｃｈｗｅｉｚ ＡＧ | How to Manufacture Edge Terminations for Silicon Carbide Power Semiconductor Devices |
| TWI594443B (en) * | 2016-08-29 | 2017-08-01 | 雋佾科技有限公司 | Shottcky diode structure and method for forming the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4783688A (en) * | 1981-12-02 | 1988-11-08 | U.S. Philips Corporation | Schottky barrier field effect transistors |
| US5027166A (en) * | 1987-12-04 | 1991-06-25 | Sanken Electric Co., Ltd. | High voltage, high speed Schottky semiconductor device and method of fabrication |
| US5166760A (en) * | 1990-02-28 | 1992-11-24 | Hitachi, Ltd. | Semiconductor Schottky barrier device with pn junctions |
| SE9700156D0 (en) * | 1997-01-21 | 1997-01-21 | Abb Research Ltd | Junction termination for Si C Schottky diode |
-
2000
- 2000-05-22 SE SE0001860A patent/SE0001860D0/en unknown
-
2001
- 2001-05-22 WO PCT/SE2001/001167 patent/WO2001091187A1/en active Application Filing
- 2001-05-22 AU AU2001260938A patent/AU2001260938A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001091187A1 (en) | 2001-11-29 |
| AU2001260938A1 (en) | 2001-12-03 |
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