SE0000115D0 - A semiconductor device - Google Patents

A semiconductor device

Info

Publication number
SE0000115D0
SE0000115D0 SE0000115A SE0000115A SE0000115D0 SE 0000115 D0 SE0000115 D0 SE 0000115D0 SE 0000115 A SE0000115 A SE 0000115A SE 0000115 A SE0000115 A SE 0000115A SE 0000115 D0 SE0000115 D0 SE 0000115D0
Authority
SE
Sweden
Prior art keywords
layer
semiconductor
semiconductor material
dopants
type doping
Prior art date
Application number
SE0000115A
Other languages
Swedish (sv)
Inventor
Johan Hammersberg
Olof Hjortstam
Mark Irwin
Jan Isberg
Original Assignee
Abb Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Ab filed Critical Abb Ab
Priority to SE0000115A priority Critical patent/SE0000115D0/en
Publication of SE0000115D0 publication Critical patent/SE0000115D0/en
Priority to AU2001228975A priority patent/AU2001228975A1/en
Priority to PCT/SE2001/000072 priority patent/WO2001054204A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/041—Making n- or p-doped regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type

Abstract

In a semiconductor device comprising a first semiconductor layer (4) doped by dopants assuming such deep energy levels in the semiconductor material of said layer that the majority thereof will not be thermally activated at working temperature a contact layer (11) is of a metal having a work function ( phi ) being for a n-type doping substantially as high as or higher than the electron affinity ( chi ) of the semiconductor material and for a p-type doping substantially as high as or lower than the sum of on one hand the band gap between the conduction band and the valence band and on the other the electron affinity of said semiconductor material. The device comprises an irradiation source adapted to emit radiation of an energy being high enough for activating said dopants and thereby controlling the barrier against charge transport between the contact layer and the semiconductor layer.
SE0000115A 2000-01-17 2000-01-17 A semiconductor device SE0000115D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE0000115A SE0000115D0 (en) 2000-01-17 2000-01-17 A semiconductor device
AU2001228975A AU2001228975A1 (en) 2000-01-17 2001-01-17 A semiconductor device
PCT/SE2001/000072 WO2001054204A1 (en) 2000-01-17 2001-01-17 A semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0000115A SE0000115D0 (en) 2000-01-17 2000-01-17 A semiconductor device

Publications (1)

Publication Number Publication Date
SE0000115D0 true SE0000115D0 (en) 2000-01-17

Family

ID=20278115

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0000115A SE0000115D0 (en) 2000-01-17 2000-01-17 A semiconductor device

Country Status (3)

Country Link
AU (1) AU2001228975A1 (en)
SE (1) SE0000115D0 (en)
WO (1) WO2001054204A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2934713B1 (en) * 2008-07-29 2010-10-15 Commissariat Energie Atomique SEMICONDUCTOR TYPE SUBSTRATE ON INTRINSIC DIAMOND LAYER INSULATION AND DOPE
DE102011081322B4 (en) * 2011-08-22 2015-03-26 Siemens Aktiengesellschaft Detector element, radiation detector and medical device with such detector elements and method for generating a detector element

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094751A (en) * 1976-09-30 1978-06-13 Allied Chemical Corporation Photochemical diodes
US4190950A (en) * 1977-06-01 1980-03-04 The United States Of America As Represented By The Department Of Energy Dye-sensitized solar cells
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source
EP0531550B1 (en) * 1991-03-28 1997-12-29 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
WO1997036309A1 (en) * 1996-03-27 1997-10-02 Matsushita Electric Industrial Co., Ltd. Electron emitting device and process for producing the same

Also Published As

Publication number Publication date
AU2001228975A1 (en) 2001-07-31
WO2001054204A1 (en) 2001-07-26

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