SE0000115D0 - A semiconductor device - Google Patents

A semiconductor device

Info

Publication number
SE0000115D0
SE0000115D0 SE0000115A SE0000115A SE0000115D0 SE 0000115 D0 SE0000115 D0 SE 0000115D0 SE 0000115 A SE0000115 A SE 0000115A SE 0000115 A SE0000115 A SE 0000115A SE 0000115 D0 SE0000115 D0 SE 0000115D0
Authority
SE
Sweden
Prior art keywords
layer
semiconductor
semiconductor material
dopants
type doping
Prior art date
Application number
SE0000115A
Other languages
Swedish (sv)
Inventor
Johan Hammersberg
Olof Hjortstam
Mark Irwin
Jan Isberg
Original Assignee
Abb Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Ab filed Critical Abb Ab
Priority to SE0000115A priority Critical patent/SE0000115D0/en
Publication of SE0000115D0 publication Critical patent/SE0000115D0/en
Priority to PCT/SE2001/000072 priority patent/WO2001054204A1/en
Priority to AU2001228975A priority patent/AU2001228975A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10P95/92—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

In a semiconductor device comprising a first semiconductor layer (4) doped by dopants assuming such deep energy levels in the semiconductor material of said layer that the majority thereof will not be thermally activated at working temperature a contact layer (11) is of a metal having a work function ( phi ) being for a n-type doping substantially as high as or higher than the electron affinity ( chi ) of the semiconductor material and for a p-type doping substantially as high as or lower than the sum of on one hand the band gap between the conduction band and the valence band and on the other the electron affinity of said semiconductor material. The device comprises an irradiation source adapted to emit radiation of an energy being high enough for activating said dopants and thereby controlling the barrier against charge transport between the contact layer and the semiconductor layer.
SE0000115A 2000-01-17 2000-01-17 A semiconductor device SE0000115D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE0000115A SE0000115D0 (en) 2000-01-17 2000-01-17 A semiconductor device
PCT/SE2001/000072 WO2001054204A1 (en) 2000-01-17 2001-01-17 A semiconductor device
AU2001228975A AU2001228975A1 (en) 2000-01-17 2001-01-17 A semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0000115A SE0000115D0 (en) 2000-01-17 2000-01-17 A semiconductor device

Publications (1)

Publication Number Publication Date
SE0000115D0 true SE0000115D0 (en) 2000-01-17

Family

ID=20278115

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0000115A SE0000115D0 (en) 2000-01-17 2000-01-17 A semiconductor device

Country Status (3)

Country Link
AU (1) AU2001228975A1 (en)
SE (1) SE0000115D0 (en)
WO (1) WO2001054204A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2934713B1 (en) * 2008-07-29 2010-10-15 Commissariat Energie Atomique SEMICONDUCTOR TYPE SUBSTRATE ON INTRINSIC DIAMOND LAYER INSULATION AND DOPE
DE102011081322B4 (en) * 2011-08-22 2015-03-26 Siemens Aktiengesellschaft Detector element, radiation detector and medical device with such detector elements and method for generating a detector element

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094751A (en) * 1976-09-30 1978-06-13 Allied Chemical Corporation Photochemical diodes
US4190950A (en) * 1977-06-01 1980-03-04 The United States Of America As Represented By The Department Of Energy Dye-sensitized solar cells
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source
EP0531550B1 (en) * 1991-03-28 1997-12-29 Asahi Kasei Kogyo Kabushiki Kaisha Field effect transistor
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
DE69703962T2 (en) * 1996-03-27 2001-09-13 Akimitsu Hatta Electron emitting device

Also Published As

Publication number Publication date
AU2001228975A1 (en) 2001-07-31
WO2001054204A1 (en) 2001-07-26

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