RU94043621A - Amplifier stage - Google Patents

Amplifier stage

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Publication number
RU94043621A
RU94043621A RU94043621/09A RU94043621A RU94043621A RU 94043621 A RU94043621 A RU 94043621A RU 94043621/09 A RU94043621/09 A RU 94043621/09A RU 94043621 A RU94043621 A RU 94043621A RU 94043621 A RU94043621 A RU 94043621A
Authority
RU
Russia
Prior art keywords
transistor
pair
gate
pairs
level shift
Prior art date
Application number
RU94043621/09A
Other languages
Russian (ru)
Other versions
RU2099856C1 (en
Inventor
Ю.М. Кобзев
В.И. Старосельский
В.И. Суэтинов
Original Assignee
Московский государственный институт электронной техники (технический университет)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Московский государственный институт электронной техники (технический университет) filed Critical Московский государственный институт электронной техники (технический университет)
Priority to RU94043621A priority Critical patent/RU2099856C1/en
Publication of RU94043621A publication Critical patent/RU94043621A/en
Application granted granted Critical
Publication of RU2099856C1 publication Critical patent/RU2099856C1/en

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  • Amplifiers (AREA)

Abstract

FIELD: electronic engineering. SUBSTANCE: amplifier stage has first and second pairs of field-effect transistors; sources of first transistor pairs are combined with common bus; drains of second transistor pairs are connected to power bus; drains of first transistor pairs are connected to sources of second ones; gate of second transistor of first pair is connected to source of second transistor of second pair; gate of second transistor of second pair is connected to source of second transistor of first pair; it also has voltage follower with level shift and voltage divider whose output is connected to gate of first transistor of second pair and input, to output of voltage follower with level shift whose input is connected to gate of second transistor of second pair. EFFECT: improved linearity of amplifier stage due to suppression of nonlinear distortion brought in by even or odd harmonics; improved resistance of amplifier gain to spread in performance; provision for building amplifiers with electric coupling between stages around this stage incorporating voltage level shift circuit.

Claims (1)

Усилительный каскад содержит первую и вторую пары идентичных полевых транзисторов, причем истоки первых транзисторов пар соединены с общей шиной, стоки вторых транзисторов пар соединены с шиной источника питания, стоки первых транзисторов пар соединены с истоками вторых транзисторов пар, затвор второго транзистора первой пары соединен с истоком второго транзистора второй пары, а затвор второго транзистора второй пары - с истоком второго транзистора первой пары, повторитель напряжения со сдвигом уровней и делитель напряжения, выход которого соединен с затвором первого транзистора второй пары, а вход - с выходом повторителя напряжения со сдвигом уровней, вход которого подключен к затвору второго транзистора второй пары. Изобретение позволяет повысить линейность усилительного каскада за счет подавления нелинейных искажений, обусловленных как четными, так и нечетными гармониками. Коэффициент усиления предложенного усилительного каскада обладает устойчивостью к технологическому разбросу. Наличие цепи сдвига уровней напряжения позволяет строить на основе данного каскада усилители с гальванической связью между каскадами.The amplifier stage contains the first and second pairs of identical field-effect transistors, the sources of the first transistors of the pairs connected to the common bus, the drains of the second transistors of the pairs connected to the bus of the power source, the drains of the first transistors of the pairs connected to the sources of the second transistors of the pairs, the gate of the second transistor of the first pair connected to the source the second transistor of the second pair, and the gate of the second transistor of the second pair with the source of the second transistor of the first pair, a voltage follower with a level shift and a voltage divider, output cat It is connected to the gate of the first transistor of the second pair, and the input is connected to the output of a voltage follower with a level shift, the input of which is connected to the gate of the second transistor of the second pair. The invention improves the linearity of the amplification stage by suppressing nonlinear distortions due to both even and odd harmonics. The gain of the proposed amplifier stage is resistant to technological variation. The presence of a voltage level shift circuit makes it possible to build amplifiers with galvanic coupling between the stages on the basis of this cascade.
RU94043621A 1994-12-09 1994-12-09 Amplifier stage RU2099856C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU94043621A RU2099856C1 (en) 1994-12-09 1994-12-09 Amplifier stage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU94043621A RU2099856C1 (en) 1994-12-09 1994-12-09 Amplifier stage

Publications (2)

Publication Number Publication Date
RU94043621A true RU94043621A (en) 1996-10-20
RU2099856C1 RU2099856C1 (en) 1997-12-20

Family

ID=20163096

Family Applications (1)

Application Number Title Priority Date Filing Date
RU94043621A RU2099856C1 (en) 1994-12-09 1994-12-09 Amplifier stage

Country Status (1)

Country Link
RU (1) RU2099856C1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2766868C1 (en) * 2021-09-08 2022-03-16 федеральное государственное бюджетное образовательное учреждение высшего образования "Донской государственный технический университет" (ДГТУ) Gallium arsenide buffer amplifier
RU2767976C1 (en) * 2021-09-09 2022-03-22 федеральное государственное бюджетное образовательное учреждение высшего образования «Донской государственный технический университет» (ДГТУ) Gallium arsenide power amplifier output stage

Also Published As

Publication number Publication date
RU2099856C1 (en) 1997-12-20

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