RU92006963A - METHOD OF CULTIVATION OF SINGLE-CRYSTAL SOLID CRYSTALS FROM THE VAPOR PHASE AND DEVICE FOR ITS IMPLEMENTATION - Google Patents

METHOD OF CULTIVATION OF SINGLE-CRYSTAL SOLID CRYSTALS FROM THE VAPOR PHASE AND DEVICE FOR ITS IMPLEMENTATION

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Publication number
RU92006963A
RU92006963A RU92006963/13A RU92006963A RU92006963A RU 92006963 A RU92006963 A RU 92006963A RU 92006963/13 A RU92006963/13 A RU 92006963/13A RU 92006963 A RU92006963 A RU 92006963A RU 92006963 A RU92006963 A RU 92006963A
Authority
RU
Russia
Prior art keywords
vapors
cultivation
implementation
vapor phase
substance
Prior art date
Application number
RU92006963/13A
Other languages
Russian (ru)
Other versions
RU2046161C1 (en
Inventor
Ю.В. Коростелин
В.И. Козловский
А.С. Насибов
П.В. Шапкин
Original Assignee
НПП "Принсипиа Оптикс"
Filing date
Publication date
Application filed by НПП "Принсипиа Оптикс" filed Critical НПП "Принсипиа Оптикс"
Priority to RU92006963A priority Critical patent/RU2046161C1/en
Priority claimed from RU92006963A external-priority patent/RU2046161C1/en
Priority to PCT/RU1993/000288 priority patent/WO1994012698A1/en
Publication of RU92006963A publication Critical patent/RU92006963A/en
Application granted granted Critical
Publication of RU2046161C1 publication Critical patent/RU2046161C1/en

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Claims (1)

Изобретение относится к производству материалов электронной техники и квантовой электроники, использующихся, в частности, для изготовления экранов лазерных электронно-лучевых трубок. Цель изобретения - увеличение однородности монокристаллов твердых растворов соединений, имеющих различие в парциальных давлениях паров более чем в 10 раз. Выращивание производят по меньшей мере из двух исходных веществ, размещенных раздельно. Эти исходные вещества нагревают до температуры выше температуры выращивания. Полученные при нагреве пары расширяют при величине расширения паров каждого вещества, обратно пропорциональной концентрации этого вещества в выращиваемом монокристалле, и подают расширенные пары в зону роста, где их смешивают перед осаждением на затравку. Устройство отличается тем, что емкость для размещения исходных веществ имеет по меньшей мере два изолированных друг от друга по текучей среде отсека, каждый из которых имеет по меньшей мере одно дроссельное выпускное отверстие.The invention relates to the production of materials of electronic equipment and quantum electronics, used, in particular, for the manufacture of screens of laser cathode-ray tubes. The purpose of the invention is to increase the homogeneity of single crystals of solid solutions of compounds having a difference in partial vapor pressures of more than 10 times. Growing produce at least two of the original substances, placed separately. These precursors are heated to a temperature above the growing temperature. The vapors obtained by heating are expanded at the magnitude of the expansion of the vapors of each substance, inversely proportional to the concentration of this substance in the grown single crystal, and the expanded vapors are fed into the growth zone, where they are mixed before settling on the seed. The device is characterized in that the container for housing the starting materials has at least two compartments isolated from each other in fluid medium, each of which has at least one choke outlet.
RU92006963A 1992-12-01 1992-12-01 Method and apparatus for growing of solid phase monocrystals from vapor phase RU2046161C1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
RU92006963A RU2046161C1 (en) 1992-12-01 1992-12-01 Method and apparatus for growing of solid phase monocrystals from vapor phase
PCT/RU1993/000288 WO1994012698A1 (en) 1992-12-01 1993-11-30 Process for growing a monocrystal from a multiple-constituent solid solution and a device for carrying out the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU92006963A RU2046161C1 (en) 1992-12-01 1992-12-01 Method and apparatus for growing of solid phase monocrystals from vapor phase

Publications (2)

Publication Number Publication Date
RU92006963A true RU92006963A (en) 1995-06-19
RU2046161C1 RU2046161C1 (en) 1995-10-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU92006963A RU2046161C1 (en) 1992-12-01 1992-12-01 Method and apparatus for growing of solid phase monocrystals from vapor phase

Country Status (2)

Country Link
RU (1) RU2046161C1 (en)
WO (1) WO1994012698A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2664912C1 (en) * 2017-11-16 2018-08-23 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" Method of producing filters for ir range

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD160522A1 (en) * 1980-10-10 1983-08-17 Alexander Klimakow METHOD FOR PRODUCING SEMICONDUCTOR COMPOUNDS
SU1686042A1 (en) * 1989-07-24 1991-10-23 Кишиневский Государственный Университет Им.В.И.Ленина Method of growing single crystals of solid solutions

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