RU2498450C1 - Method for making silicon-on-insulator structure - Google Patents

Abstract

FIELD: electricity.

SUBSTANCE: to amorphous insulating layer SiO₂ of Si substrate ions of light segregating impurity are implanted which are capable to form nanocrystals within volume of the layer SiO₂-Si⁺ or Ge⁺. Localisation area of the implanted impurity is obtained. Implantation modes ensure concentration of the implanted additive sufficient to form nanocrystals not less than 10 at.% and not more than 20 at.% at which the distance between introduced foreign atoms is less than their diffusion length at annealing and location of localisation area for the implanted impurity at distance of the semiconductor surface layer is not less than diffusion length of the implanted impurity at annealing. Donor substrate made of Si is connected with SiO₂ layer of the substrate and coupling procedure is performed with formation of surface Si layer of the required thickness at SiO₂ thus making silicone-on-insulator structure. Finally annealing is made providing diffusion of the introduced impurity, coalescence and formation of nanocrystals in amorphous insulating layer.

EFFECT: due to formation of nanocrystals being traps for negative charges unfavourable influence of the built-in positive charge in dielectric compensated thus ensuring improvement in structure quality, removing sequences of ionising radiation expanding application scope.

14 cl, 4 dwg

Description

The invention relates to semiconductor technology and can be used to create modern instrument structures of micro- and nanoelectronics, in particular. multilayer semiconductor structures and multilayer semiconductor-dielectric structures in the manufacture of super large integrated circuits (VLSI) and other products of semiconductor technology with increased radiation resistance.

A known method of manufacturing a semiconductor-on-insulator structure (US patent No. 5360752 for the invention, IPC: 5 H01L 21/76), which consists in the fact that the substrate is coated with an insulating layer made on its surface, into which ions are implanted to form recombination centers forming an impurity, after which they take a donor semiconductor substrate, connect it to the insulating layer of the substrate and carry out splicing, annealing in the temperature regime up to 850 ° C, and finally form the surface layer of the semiconductor as required thickness, performing etching with non-planar side of the donor substrate, pitting the donor substrate to the desired thickness of the surface semiconductor layer. The method uses a silicon substrate and a donor substrate. As an insulating layer, a layer of silicon oxide with a thickness of 350 ÷ 450 im. The implantation of ions to form recombination centers that getter the impurity in the insulating layer is carried out in two stages in order to obtain a uniform distribution of the recombination centers; first, they carry out “deep” implantation of ions with an energy of 500 keV in doses from 5 × 10 ¹⁴ cm ^-2 to 2 × 10 ¹⁵ cm ^-2 , and then “shallow” - with an energy of 180 keV with a dose of 1 × 10 ¹⁵ cm ^-2 . Before joining and splicing, a cleaning procedure is carried out. Carry out annealing in temperature conditions up to 850 ° C. mainly at 800 ° C. As implantable impurities use germanium or arsenic.

The disadvantages of the known technical solutions include the low quality of the semiconductor-on-insulator structures, the limitation of the technological field of application - in particular, when creating VLSI with high radiation resistance. The reasons that impede the achievement of the following technical result are as follows.

First, the implantation regimes used increase the radiation load on a buried dielectric (insulating layer) of the structure of a zero-conductor-on-insulator, thereby reducing the quality of the dielectric.

Secondly, the implantation modes used provide a large dispersion in the distribution of implanted ions in the dielectric, which impairs the quality of the interface between the silicon oxide layer and the silicon substrate.

Third, the use of recombination centers in silicon oxide as gettering centers for impurity atoms reduces the structural uniformity of the dielectric layer and leads to the degradation of its properties.

Fourth, the annealing modes used, at temperatures below 850 ° C, reduce the efficiency of the created semiconductor-on-insulator structures, often making them unsuitable, in currently available silicon technology using high-temperature conditions up to ≥1000 ° С.

As the closest analogue, a method for manufacturing a semiconductor-on-insulator structure was selected (publication No. 0652591 of the European application for invention, application No. 94116233.1 of 10/14/94, IPC: 6 H01L 21/76, publ. 05/10/95, Bull . 95/19), which consists in the fact that they take a substrate with an insulating layer made on its surface, into which ions are implanted to form recombination centers that getter an impurity, after which a donor semiconductor substrate is taken, an insulating layer is made on its surface, connected substrate and don substrate they are fused with insulating layers and spliced, then annealed in the temperature regime up to 850 ° C, finally form the surface layer of the semiconductor of the required thickness, etching from the non-planar side of the donor substrate, etching the donor substrate to the desired thickness of the surface layer of the semiconductor - from 70 to 100 them. The method uses a silicon substrate and a donor substrate. As an insulating layer, a silicon oxide layer 350 to 450 nm thick is made. The implantation of ions to form recombination centers that getter the impurity in the insulating layer of the substrate and the donor substrate is carried out in two stages in order to obtain a uniform distribution of recombination centers; First, they carry out “deep” implantation of ions with an energy of 500 keV in doses from 5 × 10 cm ^-2 to 2 × 10 ⁵ cm ^-2 , and then “shallow” - with an energy of 180 keV in a dose of 1 × 10 ¹⁵ cm ^-2 . Before joining and splicing, a cleaning procedure is carried out. Carry out annealing in the temperature regime up to 850 ° C, mainly at 800 ° C. As implantable impurities use germanium or arsenic.

The disadvantages of the known technical solutions include the low quality of the semiconductor-on-insulator structures, the limitation of the technological field of application - in particular, when creating VLSI with high radiation resistance. The reasons that impede the achievement of the following technical result are as follows.

First, the implantation modes used increase the radiation load on the buried dielectric (insulating layers) of the semiconductor-on-insulator structure, thereby reducing the quality of the dielectric.

Secondly, the implantation modes used provide a greater dispersion in the distribution of implanted ions in the dielectric, which impairs the quality of the interface between the silicon oxide layer and the silicon substrate.

Third, the use of recombination centers in silicon oxide as gettering centers for impurity atoms reduces the structural uniformity of the dielectric layer and leads to the degradation of its properties.

Fourth, the annealing modes used, at temperatures below 850 ° C, reduce the efficiency of the created semiconductor-on-insulator structures, often making them unsuitable, in the currently available silicon technology using high-temperature conditions to ≥1000 ° C.

The technical result of the invention is:

- improving the quality of the structure of the semiconductor-on-insulator;

- reduction of the negative effect of ionizing radiation on the characteristic structure currents;

- expansion of the technological scope of the method.

The technical result is achieved in a method of manufacturing a semiconductor-on-insulator structure, which consists in taking a substrate with an insulating layer made on its surface into which the implantation of ions is carried out, connecting the donor semiconductor substrate to the insulating layer of the substrate, and performing splicing, annealing, form the surface layer of the semiconductor of the required thickness, and the implantation is carried out in an amorphous insulating layer of ions of easily segregating impurities, with the ability to 4 crystals in the volume of the amorphous insulating layer, and get the region of localization of the implanted impurity under conditions that ensure the concentration of the implanted impurity, sufficient for the formation of nanocrystals, under which the distance between the implanted impurity atoms is less than their diffusion length during annealing, and obtain the localization region of the implanted impurity located at a distance from the surface layer of the semiconductor is not less than the diffusion length of the embedded impurity during annealing, then the amorphous substrate is connected Using an insulating layer with a donor semiconductor substrate and splicing, the surface layer of the semiconductor of the required thickness is formed; in the final, annealing is performed under conditions that ensure diffusion of the introduced impurity, coalescence and formation of nanocrystals in the amorphous insulating layer.

In the method, a silicon donor substrate is used as a semiconductor donor substrate.

In the method, a silicon oxide layer is grown in the composition of the donor substrate from silicon.

In the method, a silicon substrate is used as a substrate, and a silicon oxide dielectric as an amorphous insulating layer on its surface.

In the method for forming a surface layer of a semiconductor of a desired thickness before joining a semiconductor donor substrate with an amorphous insulating layer of the substrate in a donor substrate, a softened region is created at a desired distance from the working surface, thereby highlighting a severed surface layer of a semiconductor of a given thickness to be transferred to an amorphous insulating layer of the substrate.

In the method, a softened zone in the donor substrate at the required distance from the working surface is created by implanting hydrogen ions with an energy value of 20 ÷ 200 keV and a dose of 2 × 10 ¹⁶ ÷ 1 × 10 ¹⁷ cm ^-2 .

In the method, before the implantation of hydrogen, a protective layer is grown on the working surface of the donor semiconductor substrate, through which the implantation is carried out and which is removed after implantation.

In the method, the ions of an easily segregating impurity are implanted into the amorphous insulating layer, which is capable of forming nanocrystals in the volume of the amorphous insulating layer to obtain a localized region of the implanted impurity, namely silicon or germanium ions.

In the method, implantation is carried out under conditions providing a concentration of the introduced impurity, sufficient for the formation of nanocrystals. at which the distance between the implanted impurity atoms is less than their diffusion length upon annealing, namely, the concentration of the impurity implanted atoms is not less than 10 at.% and not more than 20 at.%.

In the method, implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, in which the distance between the embedded impurity atoms is less than their diffusion length during annealing, with the concentration of the embedded impurity atoms not less than 10 at.% And not more than 20 at.%, while ensuring the sizes of nanocrystals from 2 to 7 them.

In the method, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, the surface layer of the semiconductor of the required thickness is formed as follows: a donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a localization region is formed implanted impurities, subjected to processing, ensuring their splicing, cleaning and hydrophilization of the surfaces on which the splicing is performed, working the surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer, after which the donor semiconductor substrate is connected to the substrate with the amorphous insulating layer by the sides with respect to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the substrate -donor with the formation on the amorphous insulating layer of the substrate of the cut-off surface layer of the semiconductor, the connection and simultaneous splicing with delamination, and akzhe preceding compound and drying after washing with ultrapure deionized water jet and removing excess physically adsorbed material from their surfaces is carried out at temperatures varying from 80 to 450 ° C, duration from 0.1 to 100 hours procedures in the chamber with a vacuum January ¹⁰ ÷ ¹⁰ March Pa or in combination with an inert dry atmosphere.

In the method, in the final, annealing is carried out under conditions that ensure diffusion of the introduced impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer, namely, at an annealing temperature of 800 ÷ 1000 ° C, a duration of at least 0.5 hours, as well as the presence of an inert atmosphere or oxidizing atmosphere.

In the method, after implantation of ions of easily segregating impurity into the amorphous insulating layer of ions and obtaining the localized region of the implanted impurity, before annealing the substrate with the amorphous insulating layer and the donor semiconductor substrate, splicing and forming the semiconductor surface layer, additional annealing is performed under conditions that provide additional growth of the amorphous insulating layer.

In the method, additional annealing under conditions providing an additional buildup of the amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of from 500 to 600 ° C for 10 minutes or more.

The invention is illustrated by the following description and the accompanying figures.

Figure 1 schematically shows the main stages of the manufacturing process of the semiconductor-on-insulator structure: I — formation of a demagnetized zone in the donor semiconductor substrate at the required distance from the working surface of the demagnetized zone by implantation of hydrogen ions releasing a cut-off surface layer of the semiconductor transferred to the insulator substrates, II - implantation of easily segregating impurities into an amorphous insulating layer of ions. capable of forming nanocrystals in it, III — low-temperature treatment (annealing) in an oxidizing atmosphere of an amorphous insulating layer on a substrate after implantation, IV — drying to remove excess physically adsorbed substances from surfaces, joining and splicing the substrate and the donor substrate with the transfer of the cut-off surface layer semiconductor to the insulator of the substrate in a vacuum chamber or inert atmosphere, V - high-temperature processing (annealing) after receiving the cut-off surface layer of the semiconductor on a substrate with an amorphous insulating layer subjected to impurity implantation, coalescence of the implanted impurities in the amorphous insulating layer, the formation of nanocrystals, where 1 - donor substrate; 2 - softened zone; 3 - substrate; 4 - amorphous insulating layer; 5 - region of localization of the implanted impurity; 6 - severed surface layer of the semiconductor; 7 - nanocrystals formed by coalescence of an impurity implanted in an amorphous insulating layer on a substrate.

Figure 2 presents a photographic image of a semiconductor-on-insulator structure with a layer of buried silicon oxide - an amorphous insulating layer containing germanium nanocrystals (nc-Ge), obtained by electron microscopy on a cross-section of a semiconductor-on-insulator structure with an amorphous insulating oxide layer silicon subjected to implantation of germanium ions with an energy of 40 keV and a dose of 2 × 10 ¹⁶ cm ^-2 , followed by low-temperature processing - annealing in a dry oxygen atmosphere at a temperature of 570 ° C for 20 min ut and high-temperature treatment - annealing at the final stage at a temperature of 900 ° C for 1 hour.

Figure 3 presents the capacitance-voltage characteristics of the mesastructures. obtained on semiconductor-on-insulator structures with a surface layer of silicon p-type conductivity: 8 - without implantation in an amorphous insulating layer; 9 - with implantation into the amorphous insulating layer of ions of easily segregating impurities capable of forming nanocrystals in it, in particular, silicon ions under conditions providing an impurity concentration of 13 at.%, Namely, with an energy of 35 keV and a dose of 2 × 10 ¹⁶ cm ^{- 2,} followed by low temperature treatment (annealing) by the dry oxygen atmosphere at a temperature of 550 ° C for 20 minutes, and carrying out high-temperature processing after receiving an off surface layer of the semiconductor on the substrate with an amorphous insulating layer subjected impl ntatsii impurities, at a temperature of 950 ° C for 1 hour.

Figure 4 shows the capacitance-voltage characteristics of mesastructures obtained on semiconductor-on-insulator structures with a n-type silicon surface layer with a buried dielectric SiO ₂ — an amorphous insulating layer subjected to implantation of germanium ions under conditions providing a volume concentration of 15 at .%, followed by low-temperature treatment (annealing) in an atmosphere of dry oxygen at a temperature of 570 ° C for 20 minutes and high-temperature processing - annealing at the final stage at a temperature of 900 ° C for 1 hour, with two directions of the applied bias.

The achievement of the technical result in the proposed method for manufacturing a semiconductor-on-insulator structure, the implementation of which uses ion implantation and direct transfer based on physical laws governing the transfer processes of semiconductor layers, is based on the physical laws of the diffusion process of implanted impurities, impurity segregation processes and the formation of nanocrystals ( nanoclusters) in the volume of the amorphous insulating layer - a buried dielectric (Figure 1), as well as physical laws dimensions determining the effect of nanocrystals on the characteristics of structures. The validity of physical representations of the achievement of a technical result is subject to experimental data (Figure 2-4).

It is well known that the transfer processes of semiconductor layers using low-temperature splicing of semiconductor wafers with the simultaneous transfer of a thin film are based on the difference in surface energies of pairs of hydrophilic and hydrophobic surfaces in different temperature ranges. In the patented technical solution (RF patent No. 2217842 for the invention “A method for manufacturing a silicon-on-insulator structure” by V.P. Popov and I.E. Tyschenko), this feature was the basis for the creation of Si / SiO ₂ / Si structures. Depending on the purity of the fused surfaces of the plates, the difference in surface energies of pairs of hydrophilic and hydrophobic surfaces can reach several orders of magnitude. In a generalized form, the creation of semiconductor heterostructures should be considered as a process of joining hydrophilic surfaces, including splicing of semiconductor wafers, and breaking of hydrophobic surfaces - hydrogen-induced transfer with the formation of the surface layer of a semiconductor of the required thickness on the surface of one of the fused wafers. Thus, one of the tasks in the manufacture of the semiconductor-on-insulator structure according to the proposed method (Fig. 1, stages I, IV) is the formation on the substrate 3, containing on the working surface an amorphous insulating layer 4, of a cut off surface layer of the semiconductor 6 by means of hydrogen induced transfer from a semiconductor wafer that acts as a donor substrate 1, in which, for transferring, a softened zone 2 is obtained with structural changes by implantation of hydrogen ions, i.e., with are hydrophobic surfaces.

In solving this problem should be guided by the following. In any case, the parameters determining the surface energy are the temperature and the high structural quality of the surfaces — the quality of the joined and spliced surfaces of the semiconductor donor substrate 1 and substrate 3 with an amorphous insulating layer 4. In this connection, one of the main requirements necessary to achieve full (100%) of the hydrophilic compound semiconductor wafers, in particular, a semiconductor substrate 1 of the donor silicon substrate 3 and the amorphous insulating layer 4 of the dielectric SiO _2, is both baking maximum possible purity surface wafers to be bonded, no physically adsorbed impurities on initial and subsequent holding surfaces directly by the hydrophilizing surfaces of the plates. After hydrophilization of the donor substrate 1 and substrate 3 with an amorphous insulating layer 4, they should be dried and physically adsorbed substances removed from the surfaces, for which they are placed in a centrifuge of a vacuum chamber and heated there to the temperatures necessary for this. Why are they paired, spliced and layered to obtain a surface layer of a semiconductor on an amorphous insulating layer 4.

Internal hydrophobic surfaces in adjacent atomic planes that are parallel to the wafer surface are preliminarily obtained in the volume of a semiconductor, in particular, Si, when a softened zone 2 is formed in it, characterized by structural changes, by implantation of hydrogen ions. The weakened zone 2 and, in particular, the indicated hydrophobic surfaces are created by forming bonds in the X-H-H-X layer undergoing implantation due to hydrogen capture on the stretched and weakened X-X bonds of the semiconductor matrix, perpendicular to the surface. In order to provide a depth average projected range of ions R _p having two hydrophobic (100) planes with a complete (100%) coated X-H-H-H bonds in the formation of the softening zone 2 via implantation needed dose of ions H ⁺ H ₂ ⁺ by 2 × 10 ¹⁶ cm ^-2 and higher at their energies from 20 to 200 keV.

The creation of a weakened zone 2 and hydrophobic surfaces is the beginning of the formation of the required thickness in the structure of the semiconductor surface layer manufactured by the proposed method. The thickness is set by selecting the mode of ion implantation.

Further, another task in the manufacture of a semiconductor-on-insulator structure, the solution of which, in fact, ensures the achievement of a technical result. is the elimination in the amorphous insulating layer 4 located on the substrate 3, and at the interfaces of the latter with the semiconductor surface 6 cut off, of the influence of a fixed positive charge in the region adjacent to the interface and resulting from structural imperfections caused by any factors, for example, ionizing radiation, characteristic, in particular, for a structure with respect to which only the first problem described above has been solved. The second problem is solved by the formation of nanocrystals (see Fig. 1 stage V, position 7) in an amorphous insulating layer 3 located in the specified layer near the fixed-charge region adjacent to the interface of the semiconductor-on-insulator structure (see Fig. 1 , stage II, III and V). The solution to the problem is based on the ability of some impurity atoms to segregate in a dielectric matrix during postimplantation annealing as a result of chemical phase separation and to form semiconductor nanoclusters or nanocrystals inside the dielectric layer, which are trapping centers of positive and negative carriers. According to available literature (AN Nazarov, T. Gebel, L. Rebohle, W. Skorupa, IN Osiyuk, VS Lysenko. Trapping of negative and positive charges in Ge ⁺ ion implanted silicon dioxide layers to high-Held electron injection. J. Appl. Phys., V.94 (2003), PP4440-4448), the cross section for the capture of negative charge carriers by nanocrystals of certain semiconductors, such as silicon and germanium, is several times higher than the cross section for the capture of positive charge carriers. The creation of such nanocrystals from a semiconductor material inside the dielectric layer of the semiconductor-on-insulator structure allows one to compensate for positive fixed charges inside the dielectric layer and at the interfaces between the buried dielectric layer and the transferred semiconductor layer, as well as between the buried dielectric layer and the substrate.

In favor of eliminating the influence of a fixed positive charge as a result of implantation of the impurity and subsequent annealing with the formation of nanocrystals in the structure of the semiconductor-on-insulator, experimental data indicate (Figure 2-4).

A photographic image (see Figure 2) obtained by electron microscopy on a cross-section of a semiconductor-on-insulator structure. demonstrates the possibility of fabricating a semiconductor-on-insulator structure with a layer of buried silicon oxide — an amorphous insulating layer containing) nanocrystals, in particular germanium (nc-Ge) in an amorphous insulating layer of silicon oxide, by implanting germanium ions followed by low-temperature treatment — annealing in an atmosphere of dry oxygen and high-temperature treatment - annealing at the final stage.

The capacitance-voltage characteristics of semiconductor-on-insulator structures with a p-type silicon surface layer of conductivity (see FIG. 3), measured on lithograph-produced mesastructures, demonstrate: in the case of a structure containing silicon nanocrystals in a buried dielectric layer, they are characterized by lower voltage displacements flat zones corresponding to a fixed positive charge, compared with the capacitance-voltage characteristics of structures with a buried dielectric layer, performed without implantation in it at Mesi and, accordingly, without the formation of nanocrystals. This indicates the formation of traps of negative charges in the buried dielectric, compensating for the built-in positive charge.

The capacitance-voltage characteristics of semiconductor-on-insulator structures with a surface layer of n-type silicon (see Fig. 4), measured on lithographically prepared mesastructures, show that in the case of the formation of a structure containing germanium nanocrystals in a buried dielectric layer by implantation of germanium ions and subsequent annealings, low-temperature and high-temperature, they have a left hysteresis and a sufficiently large shift in the voltage of the flat zones, which is about 20 V This indicates the presence of small traps of negative charges in the dielectric.

Based on the stated physical concepts, the manufacture of a semiconductor-on-insulator structure with the achievement of a technical result is ensured by the implementation of the following stages (see Figure 1).

1. A softened zone 2 is formed in the semiconductor wafer - the donor substrate 1 at the required distance from the working surface, thus highlighting the cut-off surface layer of the semiconductor of a given thickness, which must be transferred to the substrate dielectric during further operations. To form a weakened zone 2, hydrogen implantation is carried out in the donor substrate 1. Before the implantation of hydrogen on the working surface of the semiconductor wafer - the donor substrate 1, which is used as a donor substrate of silicon, a protective layer of silicon oxide can be grown through which the implantation is carried out and which is removed after implantation. For implantation using hydrogen ions with an energy value of 20 ÷ 200 keV and doses of 2 × 10 ¹⁶ ÷ 1 × 10 ¹⁷ cm ^-2 (I stage. Figure 1). Carrying out this stage gives rise to the formation of the required thickness in the structure of the surface layer of the semiconductor, that is, this stage is the initial stage of formation of the surface layer of the semiconductor, in particular silicon, of the required thickness.

2. Carry out the first stage in solving the problem aimed at improving the properties of the semiconductor-on-insulator structure and expanding the technological scope of the method. The purpose of the stage is to introduce an impurity into the amorphous insulating layer 4 to improve the fabricated structure, to eliminate the influence of the built-in positive charge due to structural imperfections in the amorphous insulating layer 4 located on the substrate 3 and at the interfaces between the latter and the semiconductor surface 6 cut off. Ions of an easily segregating impurity are implanted into an amorphous insulating layer 4 on a substrate 3, which, during postimplantation annealing, can form nanocrystals in the volume of the amorphous insulating layer that capture negative charge carriers and eliminate the influence of built-in positive charges. The sizes of nanocrystals are from 2 to 7 im. As a result of implantation in the amorphous insulating layer 4, a localization region of the implanted impurity 5 is formed (stage II, FIG. 2). The implantation conditions, in particular, the ion energy, are selected on the basis of obtaining the profile of the implanted impurity — the localization region of the implanted impurity 5 located near the built-in positive charge region due to structural imperfections, i.e., in the amorphous insulating layer 4 located on the substrate 3, and at the interface between the latter and the cut off surface layer of semiconductor 6, but not closer than the distance from the interface, equal to the diffusion length of the introduced impurity during the last constituents heat treatments. Accordingly, the formation of nanocrystals under conditions of subsequent heat treatment is carried out in the volume of the amorphous insulating layer 4. The specific energy values are determined by the parameters of the amorphous insulating layers 4 in the structures, for example, the quality of the dielectric, as well as the conditions of subsequent heat treatments. In addition, the conditions for implantation, in particular the dose of ions, are selected on the basis of obtaining the concentration of the introduced impurity in the area of localization of the implanted impurity 5 sufficient to eliminate the negative manifestations of electrically active defects - a fixed positive spatial charge. In this case, the concentration of the introduced impurity is such that the distance between the implanted impurity atoms is less than the length of their diffusion during subsequent heat treatments. In particular, the concentration of embedded ions ranges from 10 at.% To 20 at.%. The corresponding dose rates of the introduced ions are determined by the parameters of the amorphous insulating layers 4 in the structures, including the quality of the dielectric, its thickness, and also the annealing conditions. These factors ensure the formation of nanocrystals ranging in size from 2 to 7 nm. As the substrate 3, a silicon substrate is used. As the amorphous insulating layer 4, a silicon oxide dielectric is used. The amorphous insulating layer 4 is preliminarily performed on the substrate 3. for example, by its oxidation. Silicon or germanium ions are used as ions of easily segregating impurities.

3. After implantation into the amorphous insulating layer 4 of ions of easily segregating impurity and the formation of a localization region of the imilanted impurity 5, low-temperature processing (annealing) of the amorphous insulating layer 4 on the substrate 3 is carried out in an oxidizing atmosphere (stage III, FIG. 1). The specified processing is carried out in an atmosphere of dry oxygen at a temperature of from 500 to 600 ° C for 10 minutes or more. The stage is carried out for the following purposes. The distribution profile of the embedded impurity, as a rule, has a Gaussian shape with asymmetry towards the surface, which leads to the release of part of the impurity to the surface. In this case, implanted impurity atoms, interacting, can form excess Si-Si, Si-Ge, Ge-Ge bonds, which create additional centers of capture of positive charges on the surface, worsening the properties of the structure. To eliminate this negative feature, an additional build-up of the amorphous insulating layer 4 is carried out, in particular, by oxidizing low-temperature treatment. As a result of this treatment, excess oxygen-unsaturated bonds on the surface of the semiconductor, in particular silicon, are eliminated and the quality of the interface between the amorphous insulating layer 4 and the surface layer of the semiconductor 6 is improved.

4. After conducting the above stages of fabrication of the structure, proceed to the final stage of forming the surface layer of the semiconductor of the required thickness (stage VI, Figure 1) and, in fact, obtaining a structure whose quality is to be improved in the course of further actions. On the substrate 3, containing on the working surface an amorphous insulating layer 4, a cut off surface layer of semiconductor 6 is formed due to hydrogen-induced transfer. In order to realize the transfer, the donor substrate 1 with the weakened zone 2 created by implantation of hydrogen ions and the substrate 3 with an amorphous insulating layer 4, in which the localized region of the implanted impurity 5 is formed, is subjected to processing that ensures their fusion. This treatment includes cleaning and hydrophilizing the surfaces on which the splicing is performed, the working surface of the donor substrate 1, from which hydrogen ions are implanted, and the surfaces of the amorphous insulating layer 4 (see Figure 1, stage III). Then, the donor substrate 1 is connected to the substrate 3 with an amorphous insulating layer 4 by the parties that underwent the indicated procedures, simultaneously spliced and delaminated over the weakened region 2 of the donor substrate 1 with the formation of a semiconductor-clipped silicon layer on the amorphous insulating layer 4 of the substrate 4. Compounding and simultaneous splicing with delamination, as well as drying prior to joining after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces, is carried out with temperature varying from 80 to 450 ° C, the duration of the procedures is from 0.1 to 100 hours, a chamber with a vacuum of 10 ¹ ÷ 10 ³ Pa or in combination with an inert dry atmosphere.

5. When the process is brought to the stage under consideration, the semiconductor-on-insulator structure is generally manufactured, and it remains to implement the final stage of solving the problem aimed at improving the characteristics of the semiconductor-on-insulator structure and expanding the technological scope of the method. The purpose of this stage is to diffuse the embedded easily segregating impurity with the formation of nanocrystals in the amorphous insulating layer 4 located on the substrate 3, which helps to eliminate the negative influence of the built-in positive charge region in the amorphous insulating layer 4 and at the interfaces between the latter and the cut off surface layer of semiconductor 6. Pa this stage of the manufacture of the structure of the conductor-pa-insulator (V stage, Figure 1) carry out high-temperature processing (annealing) under conditions, in aggregate and ensuring the diffusion of the impurity implanted into the amorphous insulating layer 4 on the substrate 3 from the localization region of the implanted impurity 5 to the interfaces, in particular, the interface, the semiconductor surface cut off 6 - amorphous insulating layer 4, its coalescence and the formation of nanocrystals in the volume of the amorphous insulating layer 4. Processing conditions - temperature conditions and duration, namely, annealing temperatures of 800 ÷ 1000 ° C, a duration of at least 0.5 hours, as well as the presence of an inert atmosphere or an oxidizing atmosphere. The conditions of high-temperature processing are selected based on the achievement of the total coalescence of the impurity implanted in the amorphous insulating layer 4 on the substrate 3 and the formation of nanocrystals with sizes from 2 to 7 nm inside the amorphous matrix, but at the same time without the possibility of diffusion of the implanted impurity atoms to the cut-off interface the semiconductor layer 6 is an amorphous insulating layer 4 and an amorphous insulating layer 4 is a substrate 3. Note that these specific annealing conditions are valid in the case of of locating the implanted impurity 5 localization region or forming the impurity atom distribution profile, as described above, in half of the amorphous insulating layer 4 adjacent to the interface of the semiconductor 6 cut-off surface layer transferred from the donor substrate 1 at a distance from the interface of adhesion no closer impurity diffusion lengths. In other cases, specific annealing modes will differ from those indicated.

The main difference between the proposed method and the closest technical solution is the implementation of an amorphous insulating layer 4 on a substrate 3. acting as an amorphous matrix, implanting ions of an easily segregating impurity capable of forming nanocrystals with sizes from 2 to 7 nm inside the amorphous insulating layer 4 under implantation conditions and conditions of subsequent annealing, as well as in the implementation of low-temperature post-implantation surface treatment of the amorphous insulating layer 4 in an oxidizing atmosphere.

The achievement of the technical result is ensured, firstly, by implanting ions of easily segregating impurity with doses sufficient for the formation of nanocrystals in the volume of the amorphous insulating layer 4, and secondly, by post-implantation high-temperature processing, which ensures diffusion of the introduced impurity, its coalescence and the formation of nanocrystals. As a result, there is no negative effect of the built-in positive charge in the dielectric of the structure and at the interface between the insulator and the surface elephant of the semiconductor. In turn, this leads to an improvement in the electrophysical characteristics of the semiconductor-on-insulator structure, in particular, in the presence of ionizing radiation.

As information confirming the possibility of implementing the proposed method with the achievement of the specified technical result, we give the following examples.

Example 1

When implementing a method of manufacturing a semiconductor-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of easily segregating impurity are implanted, which are capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, a region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. A silicon substrate is used as a substrate, and a silicon oxide grown thermally 300 nm thick is used as an amorphous insulating layer on its surface.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the severed surface layer of the semiconductor of a given thickness, which must be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer is grown on the working surface of the donor semiconductor substrate — the 50 nm thick silicon oxide layer mentioned above, through which implantation is carried out and which is removed after implantation.

The amorphous insulating layer is implanted with ions of an easily segregating impurity, which is capable of forming nanocrystals in the volume of the amorphous insulating layer, to obtain a localized region of the implanted impurity, namely, Si ⁺ ions. The specified impurity is able to coalesce under phase separation upon subsequent annealing and form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per the dose of ions 2 × 10 ¹⁵ cm ^-2 , while ensuring the size of the nanocrystals 3 them. Obtaining the localization region of the implanted impurity, located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurity during annealing, is achieved by using ion energy of 35 keV.

After implantation of ions of easily segregating impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing and forming the semiconductor surface layer under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of from 500 ° C for 1 hour.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. The donor substrate with the weakened zone created by means of hydrogen ion implantation and the substrate with an amorphous insulating layer in which the localized region of the implanted impurity is formed is subjected to a process that ensures their splicing — cleaning and hydrophilization of the surface on which the splicing is performed, the working surface of the substrate the donor, from which the implantation of hydrogen ions, and the surface of the amorphous insulating layer. Then, the semiconductor donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate with the formation of a semiconductor surface layer cut off on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 450 ° C for 0.5 hours, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from the surfaces is carried out at 200 ° C and a duration of 0.1 hour . The operations of joining, splicing and delamination prior to drying and removal of excess physically adsorbed substances from the surfaces are carried out in a chamber with a vacuum of 10 ³ Pa.

Final annealing, under conditions ensuring diffusion of the introduced impurity, coalescence and formation of nanocrystals in an amorphous insulating layer, is carried out at an annealing temperature of 950 ° C for 5 hours, in the presence of an inert argon atmosphere.

The result is a structure containing Si of 0.6 micron and 0.3 micron SiO ₂ on Si substrate, a silicon nanocrystals in the SiO ₂ layer of 3 nm in size.

Example 2

When implementing a method of manufacturing a semiconductor-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of easily segregating impurity are implanted, which are capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, a region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. A silicon substrate is used as a substrate, and a silicon oxide grown thermally 300 nm thick is used as an amorphous insulating layer on its surface.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the severed surface layer of the semiconductor of a given thickness, which must be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer is grown on the working surface of the donor semiconductor substrate — the 50 nm thick silicon oxide layer mentioned above, through which implantation is carried out and which is removed after implantation.

The amorphous insulating layer is implanted with ions of an easily segregating impurity, which is capable of forming nanocrystals in the volume of the amorphous insulating layer, to obtain a localized region of the implanted impurity, namely, Si ⁺ ions. The specified impurity is able to coalesce under phase separation upon subsequent annealing and form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per the dose of ions is 2 × 10 cm ^-2 , while providing nanocrystal sizes from 2 to 3 nm. Obtaining the localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurity during annealing is achieved by using ion energy of 40 keV.

After implantation of ions of easily segregating impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing and forming the semiconductor surface layer under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of 570 ° C for 20 minutes.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. The donor substrate with the weakened zone created by implanting hydrogen ions and the substrate with an amorphous insulating layer, in which the region of localization of the implanted impurity is formed, is subjected to a treatment that ensures their splicing, cleaning and hydrophilization of the surfaces on which the splicing is performed, the working surface of the substrate - a donor, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then, the donor semiconductor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate with the formation of a semiconductor surface cut off on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination is carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from the surfaces is carried out at 200 ° C and lasts 0.1 hours. The operations of joining, splicing and delamination prior to drying and removal of excess physically adsorbed substances from the surfaces are carried out in a chamber with a vacuum of 10 ² Pa.

Final annealing, under conditions ensuring diffusion of the introduced impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer, is carried out at an annealing temperature of 950 ° C for 2 hours, in the presence of an inert nitrogen atmosphere.

The result is a structure containing 0.6 μm Si and 0.3 μm SiO ₂ on a Si substrate, with silicon nanocrystals in a SiO ₂ layer _of size 2–3.

Example 3

When implementing a method of manufacturing a semiconductor-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of easily segregating impurity are implanted, which are capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, a region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. A silicon substrate is used as a substrate, and a silicon oxide grown thermally 300 nm thick is used as an amorphous insulating layer on its surface.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the severed surface layer of the semiconductor of a given thickness, which must be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ⁺ with an energy value of 20 keV and a dose of 4 × 10 cm ^-2 . Before hydrogen implantation, a protective layer is grown on the working surface of the donor semiconductor substrate — the 5-nm-thick silicon oxide layer mentioned above, through which the implantation is performed and which is removed after implantation.

The amorphous insulating layer is implanted with ions of an easily segregating impurity, which is capable of forming nanocrystals in the volume of the amorphous insulating layer, to obtain a localized region of the implanted impurity, namely, Si ⁺ ions. The specified impurity is able to coalesce under phase separation upon subsequent annealing and form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per the dose of ions is 3 × 10 ¹⁶ cm ^-2 , while ensuring the sizes of nanocrystals from 3 to 5 im. Obtaining the localization region of the implanted impurity, located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurity during annealing, is achieved by using ion energy of 60 keV.

After implantation of ions of easily segregating impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing and forming the semiconductor surface layer under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of 600 ° C for 10 minutes.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. The donor substrate with the weakened zone created by implantation of hydrogen ions and the substrate with an amorphous insulating layer in which the region of localization of the implanted impurity is formed is subjected to processing that ensures their splicing, cleaning and hydrophilization of the surfaces on which the splicing is performed, the working surface of the substrate the donor, from which the implantation of hydrogen ions, and the surface of the amorphous insulating layer. Then, the donor semiconductor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate with the formation of a semiconductor surface cut off on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 200 ° C for 0.15 hours in an inert dry atmosphere, and the drying prior to the connection after washing with a jet of ultrapure deionized water and the removal of excess physically adsorbed substances from surfaces is carried out at 200 ° C and duration 0.1 hours. The previous drying and removal of excess physically adsorbed substances from the surface is carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing, under conditions ensuring diffusion of the introduced impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer, is carried out at an annealing temperature of 980 ° C, for a duration of 0.5 hours, in the presence of an inert argon atmosphere.

The result is a structure containing 0.6 μm Si and 0.3 μm SiO ₂ on a Si substrate, with silicon nanocrystals in a SiO ₂ layer ranging in size from 3 to 5 im.

Example 4

When implementing a method of manufacturing a semiconductor-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of easily segregating impurity are implanted, which are capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, the region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. A silicon substrate is used as a substrate, and a silicon oxide grown thermally 400 nm thick is used as an amorphous insulating layer on its surface.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the semiconductor layer of the specified thickness cut off by the surface and to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 200 keV and a dose of 1 × 10 ¹⁷ cm ^-2 . Before hydrogen implantation, a protective layer is grown on the working surface of the donor semiconductor substrate — the 50 nm thick silicon oxide layer mentioned above, through which implantation is carried out and which is removed after implantation.

The amorphous insulating layer is implanted with ions of an easily segregating impurity, which is capable of forming nanocrystals in the volume of the amorphous insulating layer, to obtain a localization region of the implanted impurity, namely, Si ⁺ ions. The specified impurity is able to coalesce under phase separation upon subsequent annealing and form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per the dose of ions is 1 × 10 cm ^-2 , while ensuring the sizes of og 4 nanocrystals up to 5 im. Obtaining the localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the introduced impurity during annealing is achieved by using ion energy of 100 keV.

After implanting ions of an easily segregated impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing, and forming the surface layer of the semiconductor, under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of 600 ° C for 10 minutes.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. The donor substrate with the weakened zone created by implanting hydrogen ions and the substrate with an amorphous insulating layer, in which the region of localization of the implanted impurity is formed, is subjected to a treatment that ensures their splicing — cleaning and hydrophilization of the surfaces on which the splicing is performed, the working surface of the substrate - a donor, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then, the donor semiconductor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate with the formation of a semiconductor surface cut off on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination is carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from the surfaces is carried out at 200 ° C and lasts 0.1 hours. The operations of joining, splicing and delamination prior to drying and removal of excess physically adsorbed substances from the surfaces are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing, under conditions ensuring diffusion of the introduced impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer, is carried out at an annealing temperature of 980 ° C for 1 hour, in the presence of an inert argon atmosphere.

The result is a structure containing 0.6 μm Si and 0.4 μm SiO ₂ on a Si substrate, with silicon nanocrystals in a SiO ₂ layer ranging in size from 4 to 5 im.

Example 5

When implementing a method of manufacturing a semiconductor-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of easily segregating impurity are implanted, which are capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, a region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. A silicon substrate is used as a substrate, and a silicon oxide grown thermally 400 nm thick is used as an amorphous insulating layer on its surface.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the severed surface layer of the semiconductor of a given thickness, which must be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 120 keV and a dose of 2 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer is grown on the working surface of the donor semiconductor substrate — the 50 nm thick silicon oxide layer mentioned above, through which implantation is carried out and which is removed after implantation.

The amorphous insulating layer is implanted with ions of an easily segregating impurity, which is capable of forming nanocrystals in the volume of the amorphous insulating layer, to obtain a localized region of the implanted impurity, namely, Si ⁺ ions. The specified impurity is able to coalesce under phase separation upon subsequent annealing and form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per the dose of ions is 2 × 10 ¹⁷ cm ^-2 , while ensuring the sizes of nanocrystals from 3 to 7 them. Obtaining the localization region of the implanted impurity, located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurity during annealing, is achieved by using ion energy of 100 eV.

After implantation of ions of easily segregating impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing and forming the semiconductor surface layer under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of 600 ° C for 30 minutes.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. The donor substrate with the weakened zone created by means of hydrogen ion implantation and the substrate with an amorphous insulating layer in which the localized region of the implanted impurity is formed is subjected to processing that ensures their splicing — cleaning and hydrophilization of the surfaces, but which are spliced, of the working surface of the substrate the donor, from which the implantation of hydrogen ions, and the surface of the amorphous insulating layer. Then, the donor semiconductor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate with the formation of a semiconductor surface cut off on the amorphous insulating layer of the substrate. The connection and simultaneous splicing with delamination is carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from the surface is carried out at 200 ° C and lasts 0.1 hours. The operations of joining, splicing and delamination prior to drying and removal of excess physically adsorbed substances from the surfaces are carried out in a chamber with a vacuum of 10 ² Pa.

Final annealing, under conditions providing diffusion of the embedded impurity. coalescence and the formation of nanocrystals in an amorphous insulating layer is carried out at an annealing temperature of 900 ° C for 6 hours, then at 950 ° C for 6 hours, then at 1000 ° C for 1 hour, in the presence of an oxidizing atmosphere of dry oxygen. After annealing, chemical treatment is carried out in hydrofluoric acid.

The result is a structure containing 0.2 μm Si and 0.4 μm SiO ₂ on a Si substrate, with silicon nanocrystals in the SiO ₂ layer ranging in size from 3 to 7 them.

Example 6

When implementing a method of manufacturing a semiconductor-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of easily segregating impurity are implanted, which are capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, a region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. A silicon substrate is used as a substrate, and a silicon oxide grown thermally 300 nm thick is used as an amorphous insulating layer on its surface.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the severed surface layer of the semiconductor of a given thickness, which must be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before the implantation of hydrogen, a protective layer is grown on the working surface of the donor semiconductor substrate — a layer of silicon oxide mentioned above, with a thickness of 50, through which the implantation is carried out and which is removed after implantation.

The amorphous insulating layer is implanted with ions of an easily segregating impurity, which is capable of forming nanocrystals in the bulk of the amorphous insulating layer, to obtain the localization region of the implanted impurity, namely, Ge ⁺ ions. The specified impurity is able to coalesce under phase separation upon subsequent annealing and form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per the dose of ions is 1 × 10 ¹⁶ cm ^-2 , while ensuring the sizes of nanocrystals from 2 to 3 them. Obtaining the localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurity during annealing is achieved by using ion energy of 40 keV.

After implantation of ions of easily segregating impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing and forming the semiconductor surface layer under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of from 500 ° C for 1 hour.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. A donor substrate with a disintegrated zone created by means of hydrogen ion implantation and a substrate with an amorphous insulating layer, in which a region of localization of the implanted impurity is formed, I undergo treatment that ensures their splicing, cleaning and hydrophilization of the surfaces on which the splicing is performed, the working surface of the substrate - a donor, from the side of which implantation of hydrogen ions, and the surface of the amorphous insulating layer is carried out. Then, the semiconductor donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate with the formation of a semiconductor surface layer cut off on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination is carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from the surfaces is carried out at 200 ° C and lasts 0.1 hours. The operations of joining, splicing and delamination prior to drying and removal of excess physically adsorbed substances from the surfaces are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing, under conditions providing diffusion of the embedded impurity. coalescence and formation of nanocrystals in an amorphous insulating layer. carried out at an annealing temperature of 800 ° C, lasting 4 hours, in the presence of an inert atmosphere of argon.

The result is a structure containing 0.6 μm Si and 0.3 μm SiO ₂ on a Si substrate, with germanium nanocrystals in the SiO ₂ layer ranging in size from 2 to 3 them.

Example 7

When implementing a method for manufacturing a semiconductor-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of easily segregating impurity are implanted, which are capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, a region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. As the substrate, a silicon substrate is used, and as an amorphous insulating layer on its surface, a silicon oxide insulator grown thermally with a thickness of 300 nm is used.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thus highlighting the cut-off surface layer of the semiconductor of a given thickness, which must be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer is grown on the working surface of the donor semiconductor substrate — the 50 nm thick silicon oxide layer mentioned above, through which implantation is carried out and which is removed after implantation.

The amorphous insulating layer is implanted with priests of easily segregated impurities, which are capable of forming nanocrystals in the volume of the amorphous insulating layer, to obtain the localization region of the implanted impurity, namely, Ge ⁺ ions. The specified impurity is able to coalesce under phase separation upon subsequent annealing and form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per the dose of ions 1 × 10 ¹⁶ cm ^-2 , while ensuring the size of the nanocrystals of about 3 them. Obtaining the localization region of the implanted impurity, located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurity during annealing, is achieved by using ion energy of 35 keV.

After implantation of ions of easily segregating impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing and forming the semiconductor surface layer under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of from 500 ° C for 1 hour.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. The donor substrate with the weakened zone created by implantation of hydrogen ions and the substrate with an amorphous insulating layer in which the region of localization of the implanted impurity is formed is subjected to processing that ensures their splicing, cleaning and hydrophilization of the surfaces on which the splicing is performed, the working surface of the substrate the donor, from the side of which the implantation of hydrogen ions is carried out, and the surface of the amorphous insulating layer. Then, the semiconductor donor substrate is connected to the substrate with an amorphous insulating layer by the sides in relation to which the above procedures are performed. at the same time, they coalesce and delaminate over the weakened region of the donor substrate with the formation on the amorphous insulating layer of the substrate of a cut-off surface layer of the semiconductor. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing the jet of ultrapure deiopized water and the removal of excess physically adsorbed substances from the surfaces is carried out at 200 ° C and lasts 0.1 hours. The operations of joining, splicing and delamination prior to drying and removal of excess physically adsorbed substances from the surfaces are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing, under conditions ensuring diffusion of the introduced impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer, is carried out at an annealing temperature of 800 ° C, lasting 4 hours, in the presence of an inert nitrogen atmosphere.

The result is a structure containing 0.6 μm Si and 0.3 μm SiO ₂ on a Si substrate, with germanium nanocrystals in a SiO ₂ layer about 3 in size.

Example 8

When implementing a method of manufacturing a semiconductor-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of easily segregating impurity are implanted, which are capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, a region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. As the substrate, a silicon substrate is used, and as an amorphous insulating layer on its surface, a silicon dioxide insulator grown thermally with a thickness of 300 im.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the severed surface layer of the semiconductor of a given thickness, which must be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer is grown on the working surface of the donor semiconductor substrate — the 50 nm thick silicon oxide layer mentioned above, through which implantation is carried out and which is removed after implantation.

The amorphous insulating layer is implanted with ions of an easily segregating impurity, which is capable of forming nanocrystals in the bulk of the amorphous insulating layer, to obtain the localization region of the implanted impurity, namely, Ge ⁺ ions. The specified impurity is able to coalesce under phase separation upon subsequent annealing and form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per counting the dose of ions 3 × 10 cm ^-2 , while ensuring the size of the nanocrystals from 2 to 4 them. Obtaining the localization region of the implanted impurity, located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurity during annealing, is achieved by using ion energy of 50 keV.

After implantation of ions of easily segregating impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing and forming the semiconductor surface layer under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of from 550 ° C for 0.5 hours.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. The donor substrate with the weakened zone created by the implantation of hydrogen ions and the substrate with an amorphous insulating layer in which the region of localization of the implanted impurity is formed is subjected to processing that ensures their splicing — cleaning and hydrophilization of the surfaces, but which are spliced, of the working surface of the substrate — the donor, from which the implantation of hydrogen ions, and the surface of the amorphous insulating layer. Then, the donor semiconductor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate with the formation of a semiconductor surface cut off on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination is carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from the surfaces is carried out at 200 ° C and lasts 0.1 hours. The operations of joining, splicing and delamination prior to drying and removal of excess physically adsorbed substances from the surfaces are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing, under conditions ensuring diffusion of the introduced impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer, is carried out at an annealing temperature of 900 ° C, lasting 4 hours, in the presence of an inert nitrogen atmosphere.

The result is a structure containing 0.6 μm Si and 0.3 μm SiO ₂ on a Si substrate, with germanium nanocrystals in a SiO ₂ layer ranging in size from 2 to 4 nm.

Example 9

When implementing a method of manufacturing a semiconductor-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of easily segregating impurity are implanted, which are capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, a region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. A silicon substrate is used as a substrate, and a silicon oxide grown thermally 400 nm thick is used as an amorphous insulating layer on its surface.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the severed surface layer of the semiconductor of a given thickness, which must be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer is grown on the working surface of the donor semiconductor substrate — the 50 nm thick silicon oxide layer mentioned above, through which implantation is carried out and which is removed after implantation.

The amorphous insulating layer is implanted with ions of an easily segregating impurity, which is capable of forming nanocrystals in the bulk of the amorphous insulating layer, to obtain the localization region of the implanted impurity, namely, Ge ⁺ ions. The specified impurity is capable of coalescing under conditions of phase separation during subsequent annealing and to form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per the dose of ions is 1 × 10 ¹⁷ cm ^-2 , while ensuring the sizes of nanocrystals from 3 to 6 nm. Obtaining the localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the introduced impurity during annealing is achieved by using ion energy of 100 keV.

After implantation of ions of easily segregating impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing and forming the semiconductor surface layer under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of 570 ° C for 0.5 hours.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. The donor substrate with the weakened zone created by implantation of hydrogen ions and the substrate with an amorphous insulating layer in which the region of localization of the implanted impurity is formed is subjected to processing that ensures their splicing, cleaning and hydrophilization of the surfaces on which the splicing is performed, the working surface of the substrate the donor, from which the implantation of hydrogen ions, and the surface of the amorphous insulating layer. Then, the donor semiconductor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate with the formation of a semiconductor surface cut off on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 450 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from the surfaces is carried out at 200 ° C and lasts 0.1 hours. The operations of joining, splicing and delamination prior to drying and removal of excess physically adsorbed substances from the surfaces are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing, under conditions ensuring diffusion of the introduced impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer, is carried out at an annealing temperature of 900 ° C for a duration of 2 hours in the presence of an inert argon atmosphere.

The result is a structure containing 0.6 μm Si and 0.4 μm SiO ₂ on a Si substrate, with germanium nanocrystals in the SiO ₂ layer ranging in size from 3 to 6 nm.

Example 10

When implementing a method of manufacturing a semiconductor-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of easily segregating impurity are implanted, which are capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, a region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. A silicon substrate is used as a substrate, and a silicon oxide grown thermally 400 nm thick is used as an amorphous insulating layer on its surface.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the severed surface layer of the semiconductor of a given thickness, which must be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹ cm ^-2 . Before hydrogen implantation, a protective layer is grown on the working surface of the donor semiconductor substrate — the silicon oxide layer mentioned above, with a thickness of 50, through which implantation is carried out and which is removed after implantation.

The amorphous insulating layer is implanted with ions of an easily segregating impurity, which is capable of forming nanocrystals in the bulk of the amorphous insulating layer, to obtain the localization region of the implanted impurity, namely, Ge ⁺ ions. The specified impurity is able to coalesce under phase separation upon subsequent annealing and form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per the dose of ions is 2 × 10 ¹⁷ cm ^-2 , while ensuring the sizes of nanocrystals from 3 to 7 them. Obtaining the localization region of the implanted impurity, located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurity during annealing, is achieved by using ion energy of 150 keV.

After implantation of ions of easily segregating impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing and forming the semiconductor surface layer under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of 600 ° C for 0.5 hours.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. The donor substrate with the weakened zone created by means of hydrogen ion implantation and the substrate with an amorphous insulating layer in which the localized region of the implanted impurity is formed is subjected to processing that ensures their splicing — cleaning and hydrophilization of the surfaces, but which are spliced, of the working surface of the substrate the donor, from which the implantation of hydrogen ions, and the surface of the amorphous insulating layer. Then, the semiconductor donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously splicing and delaminating that weakened region of the donor substrate with the formation of a semiconductor surface with a cut off surface layer. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 450 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from the surfaces is carried out at 200 ° C and lasts 0.1 hours. The operations of joining, splicing and delamination prior to drying and removal of excess physically adsorbed substances from the surfaces are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing, under conditions ensuring diffusion of the introduced impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer, is carried out at an annealing temperature of 900 ° C, for a duration of 0.5 hours, in the presence of an inert argon atmosphere.

The result is a structure containing 0.6 μm Si and 0.4 μm SiO ₂ on a Si substrate, with germanium nanocrystals in the SiO ₂ layer ranging in size from 3 to 7 nm.

Example 11

When implementing the method of manufacturing the semiconductor-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of easily segregating impurities are implanted, which are capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, a region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. A silicon substrate is used as a substrate, and a silicon oxide grown thermally 400 nm thick is used as an amorphous insulating layer on its surface.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the severed surface layer of the semiconductor of a given thickness, which must be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer is grown on the working surface of the donor semiconductor substrate — the 50 nm thick silicon oxide layer mentioned above, through which implantation is carried out and which is removed after implantation.

The amorphous insulating layer is implanted with ions of an easily segregating impurity, which is capable of forming nanocrystals in the bulk of the amorphous insulating layer, to obtain the localization region of the implanted impurity, namely, Ge ⁺ ions. The specified impurity is able to coalesce under phase separation upon subsequent annealing and form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per the dose of ions is 2 × 10 ¹⁷ cm ^-2 , while ensuring the sizes of nanocrystals from 5 to 7 nm. Obtaining the localization region of the implanted impurity, located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurity during annealing, is achieved by using ion energy of 150 keV.

After implantation of ions of easily segregating impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing and forming the semiconductor surface layer under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of 600 ° C for 0.5 hours.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. The donor substrate with the weakened zone created by implantation of hydrogen ions and the substrate with an amorphous insulating layer in which the localized region of the implanted impurity is formed is subjected to processing that ensures their splicing — cleaning and hydrophilization of the surface, but which splicing is performed on, the working surface of the substrate the donor, from which the implantation of hydrogen ions, and the surface of the amorphous insulating layer. Then, the donor semiconductor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate with the formation of a semiconductor surface cut off on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 300 ° C for 25 hours, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from surfaces is carried out at 80 ° C and lasts 1 hour. The operations of joining, splicing and delamination prior to drying and removal of excess physically adsorbed substances from the surface are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing, under conditions ensuring diffusion of the introduced impurity, coalescence and formation of nanocrystals in an amorphous insulating layer, is carried out at an annealing temperature of 900 ° C, lasting 6 hours, then at an annealing temperature of 950 ° C, lasting 6 hours, then at an annealing temperature of 1000 ° C , lasting 1 hour, in the presence of an oxidizing atmosphere of dry oxygen. After annealing, chemical treatment is carried out in hydrofluoric acid.

The result is a structure containing 0.2 μm Si and 0.4 μm SiO ₂ on a Si substrate, with germanium nanocrystals in the SiO ₂ layer ranging in size from 5 to 7 nm.

Example 12

When implementing the method of manufacturing the semiconductor-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, in which ions are easily implanted with an easily segregating impurity, which is capable of forming nanocrystals in the volume of the amorphous insulating layer. As a result of implantation, the region of localization of the implanted impurity is obtained. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, and also provide a localization region of the implanted impurity located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurities during annealing. Then, the substrate is joined by an amorphous insulating layer with a semiconductor donor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed. In the final, annealing is carried out under conditions that ensure diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer.

As the semiconductor donor substrate, a silicon donor substrate is used. A silicon oxide layer is grown in the composition of the donor substrate from silicon. A silicon substrate is used as a substrate, and a silicon oxide grown thermally 400 nm thick is used as an amorphous insulating layer on its surface.

To form the surface layer of the semiconductor of the required thickness, before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the severed surface layer of the semiconductor of a given thickness, which must be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer is grown on the working surface of the donor semiconductor substrate — the silicon oxide layer mentioned above, with a thickness of 50, through which implantation is carried out and which is removed after implantation.

The amorphous insulating layer is implanted with ions of an easily segregating impurity, which is capable of forming nanocrystals in the bulk of the amorphous insulating layer, to obtain the localization region of the implanted impurity, namely, Ge ⁺ ions. The specified impurity is able to coalesce under phase separation upon subsequent annealing and form nanocrystals. The implantation is carried out under conditions ensuring the concentration of the introduced impurity, sufficient for the formation of nanocrystals, under which the distance between the embedded impurity atoms is less than their diffusion length during annealing, namely, the concentration of the embedded impurity atoms is not less than 10 at.% And not more than 20 at.% Per the dose of ions is 1.5 × 10 ¹⁷ cm ^-2 , while ensuring nanocrystal sizes from 4 to 7 nm. Obtaining the localization region of the implanted impurity, located at a distance from the surface layer of the semiconductor not less than the diffusion length of the embedded impurity during annealing, is achieved by using ion energy of 135 keV.

After implanting ions of an easily segregated impurity into the amorphous insulating layer and obtaining the localized region of the implanted impurity, additional annealing is carried out before the amorphous insulating layer is donated with the donor semiconductor substrate, splicing, and forming the surface layer of the semiconductor, under conditions that provide additional growth of the amorphous insulating layer. Additional annealing under conditions providing an additional build-up of an amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of 600 ° C for 20 minutes.

After additional annealing, the substrate is joined by an amorphous insulating layer with a donor semiconductor substrate and spliced, and the surface layer of the semiconductor of the required thickness is formed as follows. The donor substrate with the weakened zone created by means of hydrogen ion implantation and the substrate with an amorphous insulating layer in which the localized region of the implanted impurity is formed is subjected to processing that ensures their splicing — cleaning and hydrophilization of the surfaces, but which are spliced, of the working surface of the substrate the donor, from which the implantation of hydrogen ions, and the surface of the amorphous insulating layer. Then, the donor semiconductor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a semiconductor surface with a cut off surface layer. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 300 ° C for 100 hours, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from surfaces is carried out at 300 ° C and lasts 0.1 hours. The operations of joining, splicing and delamination prior to drying and removal of excess physically adsorbed substances from the surfaces are carried out in a chamber with a vacuum of 10 ² Pa.

Final annealing, under conditions ensuring diffusion of the embedded impurity, coalescence and the formation of nanocrystals in an amorphous insulating layer, is carried out at an annealing temperature of 970 ° C, for a duration of 0.5 hours, in the presence of an inert atmosphere of nitrogen.

The result is a structure containing 0.6 μm Si and 0.4 μm SiO ₂ on a Si substrate, with germanium nanocrystals in a SiO ₂ layer _of size 4 to 7 im.

Thus, the positive effect of the proposed method for manufacturing a semiconductor-on-insulator structure using implantation of ions of easily segregating impurities capable of forming nanocrystals in the dielectric of one semiconductor wafer, hydrogen-induced transfer of the semiconductor layer from another semiconductor wafer and subsequent high-temperature annealing is:

1. Reducing the radiation load on the buried amorphous dielectric layer through the use of implantation of monoenergetic ions.

2. High quality dielectric by reducing the degree of disorder. achieved by implantation of an impurity into the dielectric region adjacent to the semiconductor-on-insulator structure splicing boundary.

3. The improved quality of the transferred semiconductor layer, achieved by compensating the built-in positive charge in the buried amorphous layer.

4. Ensuring increased resistance of the semiconductor-on-insulator structure to the effects of ionizing radiation by introducing traps of negative charges into the buried amorphous (dielectric) layer, compensating for the positive charges generated by ionizing radiation. These advantages are the result of segregation of the implanted impurity inside the amorphous layer and the formation of semiconductor nanocrystals inside the buried amorphous layer of the semiconductor-on-insulator structure, which are traps of negative charges and improve the quality of the insulating layer, the quality of the interface between the insulating layer and the single-crystal semiconductor layer and the quality of the transferred semiconductor layer .

Claims (14)

1. A method of manufacturing a semiconductor-on-insulator structure, which consists in the fact that they take a substrate with an insulating layer made on its surface, into which the implantation of ions is carried out, connect a donor semiconductor substrate to the insulating layer of the substrate and carry out splicing, annealing, form a surface a semiconductor layer of the required thickness, characterized in that the implantation is carried out in an amorphous insulating layer of ions of easily segregating impurities with the ability to form nanocrystals in bulk morphic insulating layer, and get the region of localization of the implanted impurity under conditions that ensure the concentration of the implanted impurity, sufficient for the formation of nanocrystals, under which the distance between the implanted impurity atoms is less than their diffusion length during annealing, and obtain the localization region of the implanted impurity located at a distance from the surface layer a semiconductor is not less than the diffusion length of the embedded impurity during annealing, then the substrate is connected by an amorphous insulating layer with a donor semiconductor substrate and splicing, form the surface layer of the semiconductor of the required thickness, annealing is carried out in the final, under conditions providing diffusion of the embedded impurity, coalescence and formation of nanocrystals in the amorphous insulating layer. 2. The method according to claim 1, characterized in that the silicon donor substrate is used as the semiconductor donor substrate. 3. The method according to claim 2, characterized in that a silicon oxide layer is grown in the composition of the silicon donor substrate. 4. The method according to claim 1, characterized in that a silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface. 5. The method according to claim 1, characterized in that for forming the surface layer of the semiconductor of the required thickness before joining the semiconductor donor substrate with the amorphous insulating layer of the substrate in the donor substrate, a softened region is created at the required distance from the working surface, thereby highlighting a semiconductor surface layer of a given thickness to be transferred to an amorphous insulating substrate layer. 6. The method according to claim 5, characterized in that the softened zone in the donor substrate at the required distance from the working surface is created by implanting hydrogen ions with an energy value of 20-200 keV and a dose
2 · 10 ¹⁶ -1 · 10 ¹⁷ cm ^-2 . 7. The method according to claim 6, characterized in that before the implantation of hydrogen on the working surface of the semiconductor donor substrate, a protective layer is grown through which the implantation is carried out and which is removed after implantation. 8. The method according to claim 1, characterized in that ions of an easily segregating impurity are implanted into the amorphous insulating layer, having the ability to form nanocrystals in the volume of the amorphous insulating layer to obtain a localized region of the implanted impurity, namely silicon or germanium ions. 9. The method according to claim 1, characterized in that the implantation is carried out under conditions providing a concentration of the implanted impurity, sufficient for the formation of nanocrystals, in which the distance between the implanted impurity atoms is less than their diffusion length during annealing, namely, the concentration of implanted impurity atoms is at least 10 at.% and not more than 20 at.%. 10. The method according to claim 9, characterized in that the implantation is carried out under conditions providing a concentration of the implanted impurity sufficient to form nanocrystals, in which the distance between the implanted impurity atoms is less than their diffusion length during annealing, with a concentration of implanted impurity atoms of at least 10 at % and not more than 20 at.%, while ensuring the sizes of nanocrystals from 2 to 7 nm. 11. The method according to claim 1, characterized in that the substrate is connected by an amorphous insulating layer with a semiconductor donor substrate and spliced, a surface layer of a semiconductor of the required thickness is formed as follows: a donor substrate with a weakened zone created by implanting hydrogen ions and a substrate with an amorphous insulating layer, in which a region of localization of the implanted impurity is formed, is subjected to processing that ensures their splicing, - cleaning and hydrophilization of surfaces along which splicing is removed, the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer, after which the semiconductor donor substrate is connected to the substrate with the amorphous insulating layer by the sides with respect to which the above procedures are performed, simultaneously spliced and delaminated the weakened region of the donor substrate with the formation on the amorphous insulating layer of the substrate of the cut-off surface layer of the semiconductor, the connection and simultaneous with Growing with delamination, as well as drying prior to joining, after washing with a jet of ultrapure deionized water and removing excess physically adsorbed substances from their surfaces, is carried out at a temperature ranging from 80 ° C to 450 ° C, the duration of the procedures is from 0.1 to 100 hours, in the chamber with a vacuum of 10 ¹ -10 ³ PA or in combination with an inert dry atmosphere. 12. The method according to claim 1, characterized in that in the final annealing is carried out, under conditions that ensure diffusion of the embedded impurity, coalescence and formation of nanocrystals in an amorphous insulating layer, namely, at an annealing temperature of 800 ÷ 1000 ° C, of duration at least 0, 5 hours, as well as the presence of an inert atmosphere or an oxidizing atmosphere. 13. The method according to claim 1, characterized in that after implantation of ions of easily segregating impurity into the amorphous insulating layer of ions and obtaining an implanted impurity localization region, before the substrate is joined by the amorphous insulating layer with the donor semiconductor substrate, splicing and formation of the semiconductor surface layer carry out additional annealing under conditions that provide additional build-up of an amorphous insulating layer. 14. The method according to claim 1, characterized in that the additional annealing under conditions providing an additional build-up of the amorphous insulating layer is carried out in an oxidizing atmosphere of dry oxygen at a temperature of from 500 ° C to 600 ° C for 10 minutes or more.

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