RU2301476C1 - Method for heterostructure manufacture - Google Patents

Abstract

FIELD: semiconductor technology.

SUBSTANCE: proposed method for heterostructure manufacture includes implantation of ions on surface whereon amorphous layer is formed in advance, implantation of slightly soluble ions and easily segregating admixtures or slightly soluble and easily segregating admixtures in substrate amorphous layer under implantation conditions affording implanted admixture concentration exceeding theoretically possible solubility limit and leading to formation of semiconductor epitaxial layer of at least one single layer thickness, as well as implantation of hydrogen into semiconductor wafer to form intercepted semiconductor layer; then intercepted semiconductor layer is formed on substrate incorporating amorphous layer on its working surface under conditions ensuring its hydrogen-induced transfer from semiconductor wafer, this being followed by baking under conditions affording segregation of admixture implanted in substrate amorphous layer to intercepted semiconductor layer-amorphous layer interface and epitaxial growth of single-crystalline semiconductor layer of implanted admixture or compounds of implanted admixtures on mentioned interface.

EFFECT: enlarged functional capabilities.

17 cl, 2 dwg

Description

The invention relates to semiconductor technology and can be used to create advanced instrumentation microelectronic structures, in particular multilayer semiconductor structures and multilayer semiconductor-dielectric structures in the production of high-speed VLSI (ultra-large integrated circuits) and other semiconductor technology products.

A known method of manufacturing a heterostructure (US patent for invention No. 4920076, IPC: 5 H01L 21/473), which consists in the fact that an amorphous layer is formed on the substrate by oxidizing part of the surface of the substrate, then a surface epitaxial layer of germanium is formed, providing a concentration of germanium in the surface region substrates on oxidized sites, sufficient to form at least one germanium monolayer, after which annealing is carried out in an oxidizing atmosphere containing water for a duration sufficient to form a single one layer of the desired thickness of silicon oxide and the growth of an epitaxial layer of germanium located between the substrate and silicon oxide, using a silicon plate as the substrate, using an annealing temperature range of 700 ÷ 1200 ° C, for the formation of a surface epitaxial layer of germanium using implantation of germanium ions with an energy of 50 ÷ 160 keV and a dose of at least 1 × 10 ¹⁵ cm ^-2 .

The main disadvantages of this technical solution are the low quality of the resulting heterostructures, the narrow scope of the method, in particular, the limited application of this method in the technology of creating high-speed VLSI. The causes of the disadvantages is the manifestation of a number of physical factors during the implementation of this method.

First, implantation of Ge ⁺ ions in a single-crystal silicon wafer using the indicated doses of ions causes the generation of radiation defects and amorphization of the implanted layer, resulting in a decrease in the quality of the semiconductor wafer. Subsequent high-temperature annealing of the amorphized silicon layer in an oxidizing atmosphere causes the generation of dislocations and stacking faults in silicon lying below the implantation region, which are stable up to temperatures close to the melting temperature of silicon and negatively affect the electrophysical properties of devices created on the basis of this method heterostructures.

Secondly, an increase in the dose of Ge ⁺ ions in order to form Ge layers of the desired thickness, which is determined by the concentration of embedded germanium, leads to an increase in the concentration of radiation defects and amorphization of the implanted silicon layer, while the last two factors limit the obtaining of the desired thickness of Ge layers in the heterostructure .

Thirdly, ion implantation causes the formation of implantation defects in the oxidizable silicon layer, resulting in structural heterogeneity of the oxidized silicon layer impaired by implantation, which leads to a deterioration in uniformity over the plate area and the depth of the formed silicon dioxide.

Fourth, the formation of a germanium layer on a silicon substrate due to the mismatch of the lattice constants of Ge and Si causes the appearance of stresses of mismatch and inhomogeneity of the germanium film. This factor is an obstacle to increasing the desired germanium film thickness in the heterostructure of more than 9 nm (D.Fathy, O.W. Holland, C.W. White "Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation", Aplied Physics letters, v. 51 (1987), pp1337-1339). An increase in the thickness of the formed germanium film leads to an increase in mismatch stresses and an increase in inhomogeneity. An increase in mismatch stresses can cause a disruption in the growth process of the epitaxial film of germanium.

Fifth, the formation of a germanium layer on a silicon substrate is a limiting factor in the use of other methods, in particular, molecular beam epitaxy and direct splicing, for the subsequent growth of heterostructure layers after removal of the silicon dioxide layer. Moreover, the methods available in the technological arsenal for the formation of single-crystal films on a disordered matrix become unsuitable, since they are intended for Si-SiO ₂ systems. Molecular beam epitaxy, often used for the formation of multilayer oriented structures, turns out to be unattractive in this case, since it requires an orienting buffer layer, which can be used as a thin silicon layer, with the consequences of mechanical stresses when exceeding the critical thickness of the growing layer of single-crystal Ge and failure of the growth process due to the mismatch of the parameters of the crystal lattices of silicon and germanium. The use in this case of direct splicing based on hydrogen-induced transfer, characterized by the use of hydrophilic processes, is accompanied by the formation of unstable germanium oxide at the Ge-SiO ₂ interface, which prevents the complete connection of the transferred film and the substrate.

The closest technical solution to the claimed is a method of manufacturing a heterostructure (US patent for the invention No. 6851158, IPC: 7 BV 9/04), which consists in the fact that oxygen ions are implanted into the substrate, forming a disordered region in the substrate with an oxygen concentration that prevents diffusion of germanium, then oxygen implantation is carried out, forming an amorphized region in this substrate, which is located closer to the surface than the disordered region, and this amorphous the region is formed in such a way that it contains a near-surface layer of the substrate, after which a germanium layer of 50–500 nm thick with a content of germanium atoms from 5% to 40% is formed on the near-surface layer of the substrate and, finally, annealing is carried out, which includes several stages in series, namely the first, which is a flap, the annealing step, is carried out in an oxygen-containing atmosphere at a temperature sufficient to initiate the formation of buried oxide in the substrate, the second, saturating, annealing step is carried out at In the temperature that ensures the formation of a continuous buried oxide, the third, which is a flap, the annealing step is carried out in an oxygen-containing atmosphere in the temperature range starting with a temperature sufficient to initiate the formation of a buried oxide in the substrate, and including all temperatures that ensure growth (increase in thickness) buried oxide in the substrate, the fourth, saturating, annealing step is carried out in an oxygen-containing atmosphere at a temperature corresponding to the temperature interval to ensure the growth of the buried oxide in the substrate and a clear interface between the layer of the buried oxide and the layers lying on it, the fifth, which represents the acceleration, the annealing step is carried out in the temperature range from temperatures corresponding to the final temperature of the interval providing the growth of the buried oxide, and to temperatures less than or equal to the melting point of germanium, thus achieving uniformity in the concentration of germanium, sixth, of oxide boiling, the annealing step is performed at a temperature equal to the final temperature of the last temperature range providing the final germanium content and the thickness thereof, wherein the substrate is selected as the silicon plate and the buried oxide, which is an insulating layer is silicon oxide.

Compared to the technical solution described above (US Patent No. 4920076, IPC: 5 H01L 21/473), the closest technical solution has the advantages that the Si-Ge bilayer is made from the bulk of the substrate by a dielectric layer representing a buried oxide silicon, which allows to eliminate the voltage mismatch between the Si-Ge bilayer and the crystal substrate, arising due to the mismatch of the parameters of the crystal lattices of silicon and germanium, as well as the fact that the bilayer S i-Ge can be used for epitaxial growth of semiconductor layers, such as silicon or germanium.

The disadvantages of the closest technical solution include the low quality of the resulting heterostructures, limiting the application of this method in the technology of creating VLSI and nanotechnology. The causes of the disadvantages is the manifestation of a number of factors when implementing this method.

First, the implantation and long-term annealing modes used cause a significant increase in the cost of manufacturing heterostructures compared to the initial cost of silicon wafers. This factor is an obstacle to the application of the known method in the mass production of ICs (integrated circuits).

Secondly, the implementation of this implantation is carried out using large doses (10 ¹⁸ cm ^-2 and above) of ions and elevated temperatures, and subsequent long-term (from units to tens of hours) annealings at very high temperatures (above 1300 ° C), which leads to large radiation-thermal loads and affects the quality of structures.

Thirdly, the formation of an insulating layer by implantation of large doses of ions leads to disordering of the substrate with a high concentration of residual defects (of the order of 10 ⁶ cm ^-2 ) in the semiconductor cut-off layer lying above the buried insulating layer of silicon oxide, which is a factor that reduces the quality of structures and restricting the use of the method in the technology of creating devices and VLSI.

Fourth, the process of forming a buried oxide layer used in the method determines its heterogeneity in thickness and the roughness of the interface between it and the semiconductor layer cut off above it, which reaches several nanometers, which leads to the restriction of the use of this method of manufacturing heterostructures for creating devices with reduced dimension (single-electron and quantum-dimensional devices), in which high demands are placed on the perfection of interfaces.

Fifth, the implantation modes used cause a high concentration of implantation defects and heterogeneity of the buried insulating layer, which leads to incomplete stress relaxation in the upper cut-off layer of the silicon-containing substrate, which is used as the basis for creating the Si-Ge bilayer. This circumstance is a limitation for the application of the known method for practical purposes, since the quality of the resulting structures is characterized by a low level.

The technical result of the invention is to improve the quality of heterostructures, expanding the technological scope of the method.

The technical result is achieved by the fact that in the method of manufacturing a heterostructure, which consists in the implantation of ions, an amorphous layer is formed on the substrate, and then ions of a poorly soluble and easily segregating impurity or weakly soluble and easily segregating impurities are implanted in the amorphous layer on the substrate implantation conditions that ensure the concentration of the embedded impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial layer a semiconductor with a thickness of at least one monolayer, hydrogen implantation into a semiconductor wafer is also provided to form a clipped semiconductor layer, after these operations, a clipped semiconductor layer is formed on a substrate containing an amorphous layer on a working surface under conditions that ensure its hydrogen-induced transfer from the semiconductor plates, after which annealing is carried out under conditions that together ensure the segregation of the implanted into amorphous impurity layer on the substrate to the interface between the semiconductor layer clipped - amorphous layer and an epitaxial growth on said interface between the single crystal semiconductor layer implanted dopant implanted impurities or compounds.

A silicon wafer is used as a semiconductor wafer, before the implantation of hydrogen, a protective layer of silicon oxide is grown on the semiconductor wafer, through which implantation is carried out and which is removed after implantation, and a silicon wafer with a dielectric layer as an amorphous layer is also used as a substrate.

The formation on the substrate containing an amorphous layer on the working surface of a severed semiconductor layer under conditions that ensure hydrogen-induced transfer from the semiconductor wafer is carried out by first processing the semiconductor wafer and the substrate, ensuring their splicing and including cleaning and hydrophilization of the surfaces, then the semiconductor wafer and the substrate are connected by parties that have undergone all of these operations, simultaneously spliced and delaminated on the floor a conductor plate subjected to hydrogen implantation, with the formation of a semiconductor layer cut off on an amorphous layer on the substrate, the connection and simultaneous splicing with delamination, as well as drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces, is carried out, varying a temperature of 80 ÷ 450 ° C with a duration of procedures from 0.1 to 100 hours, in a chamber with a vacuum of 10 ¹ ÷ 10 ³ Pa or in combination with an inert dry atmosphere.

The hydrogen implantation is carried out by implanting hydrogen ions with an energy value of 20 ÷ 200 keV and a dose of 2 × 10 ¹⁶ ÷ 1 × 10 ¹⁷ cm ^{-2, which} ensures the formation of a cut off semiconductor layer.

Ions of a poorly soluble and easily segregating impurity, such as germanium or carbon ions, are implanted in the amorphous layer on the substrate, or ions of weakly soluble and easily segregating impurities, such as antimony and indium ions, or gallium and arsenic, or gallium and antimony, are implanted and arsenic, or gallium and phosphorus, or indium and phosphorus, under conditions providing a concentration of embedded impurity exceeding the theoretically possible solubility limit and leading to the formation of an epitaxial layer of a semiconductor at least in thickness one monolayer, such as an ion dose of 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ^-2 , and an energy of 20 to 500 keV.

Annealing is carried out under conditions that together ensure the segregation of the impurity implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer - amorphous layer and epitaxial growth at the indicated interface of the single-crystal semiconductor layer of the implanted impurity or compounds of implanted impurities, namely, at an annealing temperature of 500 ÷ 1100 ° С and its duration 0.5 ÷ 100 hours.

The invention is illustrated by the following description and the accompanying figures. Figure 1 schematically shows the main stages of the fabrication of a heterostructure: I - implantation of hydrogen ions into a semiconductor wafer, II - implantation of ions of weakly soluble and easily segregating impurities into an amorphous layer on a substrate, III - drying, joining and splicing of a semiconductor wafer and substrate, peeling off a thin semiconductor films in a vacuum chamber or inert atmosphere, IV - high-temperature annealing of the substrate with the implanted amorphous layer and a semiconductor cut-off layer, segregation is implanted the cut off semiconductor layer — an amorphous layer and the epitaxial growth of the semiconductor layer of the implanted impurity at the interface, where 1 is a semiconductor wafer, 2 is a layer of a semiconductor wafer subjected to hydrogen implantation, 3 is a substrate, 4 is an amorphous layer on the substrate, 5 - the depth of the implanted impurity ions, 6 - severed semiconductor layer, 7 - semiconductor epitaxial semiconductor layer of the implanted impurity / impurities at the interface severed semiconductor kovy layer - amorphous layer. Figure 2 shows the proportion of germanium located in irregular positions relative to the nodal positions of the silicon matrix in the (100) direction, according to measurements of Rutherford backscattering and channeling of He ⁺ ions with an energy of 1.7 MeV in structures containing a silicon substrate, an amorphous layer, which is a 290 nm thick SiO ₂ insulator, subjected to implantation of 40 keV Ge ⁺ ions with a dose of 8 × 10 ¹⁵ cm ^-2 , a 600 nm thick cut-off silicon layer obtained after annealing in N ₂ atmosphere for 30 minutes at 900 ° C (a) and 1100 ° C ( b), where 8 is the yield of germanium atoms in irregular positions under conditions of a maximally misoriented silicon matrix relative to the He ⁺ test beam for structures annealed at 900 ° С, 9 is the yield of germanium atoms in irregular positions under conditions of an oriented silicon matrix relative to the test beam He ⁺ for structures subjected to annealing at 900 ° C, 10 - exit germanium atoms in irregular positions in the conditions of maximum misoriented silicon matrix of the beam relative to the test structures for He ^+, podver shihsya annealed at 1100 ° C, 11 - exit germanium atoms in irregular positions in a silicon matrix oriented relative to the test He ⁺ beam for structures subjected to annealing at 1100 ° C.

In the proposed method, the creation of semiconductor epitaxial heterostructures using ion implantation and direct transfer is based on physical laws that determine the transfer processes of semiconductor layers, the segregation and crystallization of implanted poorly soluble impurities at the interface, and also on the available experimental data.

The transfer processes of semiconductor layers, including low-temperature splicing of semiconductor wafers with simultaneous transfer of a thin film, are based on the difference in surface energies of pairs of hydrophilic and hydrophobic surfaces in different temperature ranges. In a patented technical solution (RF patent for the invention No. 2217842 “Method for manufacturing a silicon-on-insulator structure” by V.P. Popov and I.E. Tyschenko), this feature was the basis for the creation of Si / SiO ₂ / Si structures. Depending on the cleanliness of the fused surfaces of the wafers, this difference in surface energies can reach several orders of magnitude, and therefore, the first stage in the creation of semiconductor heterostructures should be considered as the process of joining hydrophilic surfaces (including fusion of semiconductor wafers) and breaking of hydrophobic surfaces (hydrogen-induced transfer of a thin film with the formation clipped layer). The task of the first stage (Fig. 1, stages I-III) of the proposed method for manufacturing heterostructures is to form on the substrate containing an amorphous layer on the working surface, a semiconductor layer cut off by hydrogen-induced transfer from a semiconductor wafer.

In any case, the parameters that determine the magnitude of surface energy are temperature and the high structural quality of the surfaces. In this regard, one of the main requirements necessary to achieve a complete (100%) hydrophilic connection of semiconductor wafers is to ensure the maximum possible cleanliness of the surfaces of the merged wafers, the absence of physically adsorbed impurities on the initial surfaces and the subsequent direct hydrophilization of the wafer surfaces themselves. After hydrophilization, the plates should be dried and physically adsorbed substances removed from their surface, for which they are placed in a centrifuge of a vacuum chamber and heated there to the temperatures necessary for this. Then they are paired.

Internal hydrophobic surfaces in adjacent atomic planes that are parallel to the wafer surface are preformed in a semiconductor layer undergoing hydrogen implantation. The formation of such surfaces occurs by the formation of bonds in the layer subjected to implantation, X-H-H-X bonds due to the capture of hydrogen on the stretched and weakened X-X bonds of the semiconductor matrix, perpendicular to the surface. In order to provide at the depth of the average projective range of R _p ions two hydrophobic (100) planes with full (100%) coverage of X-H-H-X bonds during implantation, which ensures the formation of a cut-off semiconductor layer, doses of H ⁺ , H ₂ ions are necessary ⁺ 2 × 10 ¹⁶ cm ^-2 and higher at their energies from 20 to 200 keV.

The second stage (Figure 1, stage IV) of creating heterostructures consists in the formation of a semiconductor layer (see Figure 1, position 7), the presence of which in the fabricated structure gives reason to attribute it to heterostructures. The basis for the implementation of this stage is the ability of impurities with low solubility in a substance to be easily displaced under high-temperature influences from the initial matrix, followed by diffusion into the environment or with subsequent segregation to existing interfaces. For example, as in the case of In, which, like Ga, easily segregates to the Si / SiO ₂ interface and quickly diffuses at a temperature of 1000 ° C (DA Antoniadis and I. Moskowitz. Diffusion of indium in silicon inert and oxidizing ambients. J. Appl. Phys. V.53, no.12, pp9214-9216, (1982)), in the case of accelerated diffusion of ion-implanted Ge in SiO ₂ with its subsequent segregation to the interface between the thermal oxide and the silicon substrate with the formation of a thin layer (J. Von Borany, R. Grötzschel, K. N. Heinig, A. Markwitz, W. Matz, B. Schmidt, W. Skorupa. Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films. Appl. Phys. Lett .v.71, no.22, pp3215-3217, (1997), as well as L. Rebohle, IETysche nko, J. von Borany, B. Schmidt, R. Grötzschel, A. Markwitz, RAYankov, H. Fröb, W. Skorupa. Strong blue and violet light emission from silicon- and germanium-implanted silicon dioxide films. Mater. Res. Soc. Symp. Proc., V. 486, pp. 175-180, (1998)).

Despite the fact that the mechanism of these processes still remains unclear, it has been shown that the parameters determining their effectiveness are the concentration of the introduced impurity (it should exceed the theoretically possible solubility limit) and the temperature of the thermal effect. In all the cases under study, the annealing temperature provides the condition when the binding energy between the introduced impurity and matrix atoms is weaker than the binding energy between the intrinsic atoms of the matrix. In this case, the matrix’s own atoms replace the introduced impurity in binding states, followed by its displacement to the interface or to the environment, where it has a higher solubility coefficient.

In the proposed method for creating semiconductor heterostructures, combinations of media are used when the introduced medium, which is implanted ions, has low solubility, for example, as in the case of Ge in SiO ₂ , or In in SiO ₂ , or Ga in SiO ₂ , or As in SiO ₂ etc. This ensures the segregation of the implanted impurity to the interface with the cut-off layer transferred from the semiconductor crystalline plate during high-temperature processing. The presence of this single-crystal medium with a low solubility coefficient of the embedded impurity can provide not only its accumulation at the interface, but also epitaxial crystallization. The mechanism of this process also remains unexplored until now, although experimental data confirming its possibility exist (D.Fathy, O.W. Holland, C.W. White. Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation. Applied Physics Letters, v. 51, (1987), pp1337-1339). In confirmation of the existence of this process, which is one of the fundamental of the proposed method for the manufacture of heterostructures, the authors cite the data they obtained (see Figure 2).

Based on the stated physical concepts, the achievement of a technical result is ensured by the implementation of the following stages (see Figure 1):

1. Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before hydrogen implantation, a protective layer of silicon oxide can be grown on the semiconductor wafer through which implantation is carried out and which is removed after implantation. For implantation using hydrogen ions with an energy value of 20 ÷ 200 keV and doses of 2 × 10 ¹⁶ ÷ 1 × 10 ¹⁷ cm ^-2 (I stage. Figure 1).

2. The implantation of ions is carried out in the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of a poorly soluble and easily segregating impurity or weakly soluble and easily segregating impurities are implanted in the amorphous layer on the substrate under implantation conditions that provide a concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer at least one monolayer thick. A silicon wafer with a dielectric layer as an amorphous layer is also used as a substrate, and implantation conditions providing an embedded impurity concentration exceeding the theoretically possible solubility limit and leading to the formation of an epitaxial semiconductor layer of at least one monolayer thickness are such that the ion dose is equal to from 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ^-2 , and the energy value from 20 to 500 keV. As ions of a poorly soluble and easily segregating impurity, germanium or carbon ions are used, or ions of weakly soluble and easily segregating impurities, such as antimony and indium ions, or gallium and arsenic, or gallium and antimony, or indium and arsenic, or gallium, are implanted. phosphorus, or indium and phosphorus (stage II, Figure 2).

3. After these operations, they form on a substrate containing an amorphous layer on the working surface, a severed semiconductor layer under conditions that ensure hydrogen-induced transfer from the semiconductor wafer, and complete the first stage of the implementation of the proposed method. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of these operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination, as well as drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces, is carried out with a temperature variation of 80 ÷ 450 ° C for a duration of 0.1 to 100 hours, in a chamber with a vacuum of 10 ¹ ÷ 10 ³ Pa or in combination with an inert dry atmosphere (stage III. Figure 1).

4. Annealing is carried out under conditions that together ensure the segregation of the impurity implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer — the amorphous layer and epitaxial growth at the indicated interface of the single crystal semiconductor layer of the implanted impurity or compounds of implanted impurities. Annealing conditions are maintenance of temperature and duration, which together ensure the segregation of the impurity implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer — the amorphous layer and epitaxial growth at the indicated interface of the single-crystal semiconductor layer of the implanted impurity or compounds of implanted impurities, namely, the annealing temperatures 500 ÷ 1100 ° C, its duration 0.5 ÷ 100 hours (IV stage. Figure 1).

The main difference of the proposed method lies in the implementation of the amorphous layer on the substrate, acting as an amorphous matrix, implantation of ions of weakly soluble and easily segregating impurities and subsequent transfer to the amorphous layer on the substrate of a single-crystal semiconductor layer from another wafer, which acts as a seed for subsequent epitaxial growth, In this case, the interface between it and the amorphous layer is the site of epitaxial growth of the semiconductor layer, as a result of which the gete ostruktura. By implanting the impurity ions involved in the formation of the heterolayer precisely into the amorphous layer on the substrate, the possibility of disordering and amorphization of the crystal seed (transferred cut-off semiconductor layer) and the substrate is eliminated, the mismatch stresses arising from the epitaxial growth of semiconductor films from a lattice constant different from the constant lattice of the substrate are eliminated , it becomes possible to increase the thickness of the inner epitaxial layer (see Figure 1, stage IV, position 7) due to the relaxation of the clipped semiconductor layer (seed), or when the clipped semiconductor layer (seed) is removed, it is possible to ensure that there is no introduction of mismatch voltages between the epitaxial layer grown at the interface and the substrate.

As information confirming the possibility of implementing the proposed method, we give the following examples.

Example 1

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before implantation of H ₂ ⁺ , a protective layer of silicon oxide 50 nm thick is grown on a silicon wafer, through which implantation is carried out and which is removed after implantation. For implantation, hydrogen ions with an energy of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^{-2 are used} .

The implantation of Ge ⁺ ions is carried out in the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of a poorly soluble and easily segregating impurity are implanted in the amorphous layer on the substrate, under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of Ge ⁺ ions is 8 × 10 ¹⁵ cm ^-2 and the energy is 40 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of these operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 450 ° C for 0.5 hours, as well as drying prior to the connection at 200 ° C for 0.1 hour after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces, is carried out in a chamber with a vacuum level of 10 ³ Pa.

Annealing is carried out under conditions that together ensure the segregation of the impurity implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer - amorphous layer and epitaxial growth at the indicated interface of the single-crystal semiconductor layer of the implanted germanium impurity until a crystalline uniform thin epitaxial layer with a thickness of about 13 monolayers is formed that is, in an inert atmosphere of nitrogen, at a temperature of 1100 ° C for 0.5 hours. In the end result, we have a structure free from dislocation and misfit defects, containing 0.6 μm Si, 13 Ge monolayers, 0.28 μm SiO ₂ on a Si substrate.

Example 2

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before implantation of H ₂ ⁺ , a protective layer of silicon oxide with a thickness of 50 nm is grown on a silicon wafer, through which implantation is carried out and which is removed after implantation. For implantation, hydrogen ions with an energy of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^{-2 are used} .

The In ⁺ and Sb ⁺ ions are implanted sequentially into the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of weakly soluble and easily segregating impurities are implanted in the amorphous layer on the substrate under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of In ⁺ ions is 3 × 10 ¹⁵ cm ^-2 and the energy is 40 keV, the dose of Sb ⁺ ions is 3 × 10 ¹⁵ cm ^-2 and the energy is 40 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of these operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 350 ° C for 1 hour, as well as drying prior to the connection at 200 ° C for 0.1 hour after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out in a chamber with a vacuum level of 10 ² Pa.

Annealing is carried out under conditions that together ensure the segregation of impurities implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer — the amorphous layer and epitaxial growth at the indicated interface of the semiconductor layer of the compounds of the implanted impurities, that is, in an inert nitrogen atmosphere, at a temperature of 500 ° C within 100 hours. As a result, we have a structure free of dislocation and misfit defects, containing 0.6 μm Si, 5 InSb monolayers, 0.28 μm SiO ₂ on a Si substrate.

Example 3

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before H ⁺ implantation, a protective layer of silicon oxide 5 nm thick is grown on a silicon wafer, through which implantation is carried out and which is removed after implantation. For implantation using hydrogen ions with an energy of 20 keV and a dose of 4 × 10 ¹⁶ cm ^-2 .

The implantation of Ge ⁺ ions is carried out in the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of a poorly soluble and easily segregating impurity are implanted in the amorphous layer on the substrate, under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of Ge ⁺ ions is 1 × 10 ¹⁵ cm ^-2 and the energy is 20 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of these operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 200 ° C for 0.15 hours, in an inert dry atmosphere, as well as drying prior to the connection at 200 ° C for 0.1 hour after washing with ultrapure deionized water and removing excess physically adsorbed substances from their surfaces is carried out in a chamber with a vacuum level of 10 ¹ PA.

Annealing is carried out under conditions that together ensure the segregation of the impurity implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer – amorphous layer and epitaxial growth at the indicated interface of the single-crystal semiconductor layer of the implanted germanium impurity until a crystalline uniform thin epitaxial layer 1 monolayer thick is formed, then eat in an inert atmosphere of nitrogen, at a temperature of 1000 ° C for 1 hour. In the end result, we have a structure free from dislocation and mismatch defects, containing 0.2 μm Si, 1 Ge monolayer, 0.28 μm SiO ₂ on a Si substrate.

Example 4

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before implantation of H ₂ ⁺ , a protective layer of silicon oxide 50 nm thick is grown on a silicon wafer, through which implantation is carried out and which is removed after implantation. For implantation using hydrogen ions with an energy of 200 keV and a dose of 1 × 10 ¹⁷ cm ^-2 .

The In ⁺ and Sb ⁺ ions are implanted sequentially into the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of weakly soluble and easily segregating impurities are implanted in the amorphous layer on the substrate under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of In ⁺ ions is 4 × 10 ¹⁵ cm ^-2 and the energy is 500 keV, the dose of Sb ⁺ ions is 4 × 10 ¹⁵ cm ^-2 and the energy is 500 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of these operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 350 ° C for 1 hour, as well as drying prior to the connection at 200 ° C for 0.1 hour after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out in a chamber with a vacuum level of 10 ¹ Pa.

Annealing is carried out under conditions that together ensure the segregation of impurities implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer — the amorphous layer and epitaxial growth of compounds of implanted impurities at the indicated interface of the semiconductor layer until a crystalline uniform thin InSb epitaxial layer with a thickness of about 10 monolayers is formed, that is, in an inert atmosphere of nitrogen, at a temperature of 1000 ° C for 5 hours. As a result, we have a structure free of dislocation and misfit defects, containing 0.7 μm Si, 10 InSb monolayers, 0.28 μm SiO ₂ , on a Si substrate.

Example 5

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before implantation of H ₂ ⁺ , a protective layer of silicon oxide with a thickness of 50 nm is grown on a silicon wafer, through which implantation is carried out and which is removed after implantation. For implantation using hydrogen ions with an energy of 120 keV and a dose of 2 × 10 ¹⁶ cm ^-2 .

The implantation of Ga ⁺ and As ⁺ ions is carried out sequentially into the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of weakly soluble and easily segregating impurities are implanted in the amorphous layer on the substrate under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of Ga ⁺ ions is 5 × 10 ¹⁵ cm ^-2 and the energy is 60 keV, the dose of As ⁺ ions is 5 × 10 ¹⁵ cm ^-2 and the energy is 100 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of these operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 350 ° C for 1 hour, as well as drying prior to the connection at 200 ° C for 0.1 hour after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out in a chamber with a vacuum level of 10 ² Pa.

Annealing is carried out under conditions that together ensure the segregation of impurities implanted in the amorphous layer on the substrate to the cutoff semiconductor layer – amorphous layer interface and epitaxial growth of compounds of implanted impurities at the indicated interface of the semiconductor layer until a crystalline uniform thin GaAs epitaxial layer with a thickness of about 13 monolayers is formed, that is, in an inert atmosphere of nitrogen, at a temperature of 1000 ° C for 1 hour. As a result, we have a structure free from dislocation and misfit defects, containing 0.5 μm Si, 13 GaAs monolayers, 0.28 μm SiO ₂ , on a Si substrate.

Example 6

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before implantation of H ₂ ⁺ , a protective layer of silicon oxide 50 nm thick is grown on a silicon wafer, through which implantation is carried out and which is removed after implantation. For implantation, hydrogen ions with an energy of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^{-2 are used} .

The In ⁺ and P ⁺ ions are implanted sequentially into the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of weakly soluble and easily segregating impurities are implanted in the amorphous layer on the substrate under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of In ⁺ ions is 4 × 10 ¹⁵ cm ^-2 and the energy is 60 keV, the dose of P ⁺ ions is 3 × 10 ¹⁵ cm ^-2 and the energy is 50 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of these operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 350 ° C for 1 hour, as well as drying prior to the connection at 200 ° C for 0.1 hour after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out in a chamber with a vacuum level of 10 ¹ Pa.

Annealing is carried out under conditions that together ensure the segregation of impurities implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer — the amorphous layer and epitaxial growth of the compounds of implanted impurities at the indicated interface of the semiconductor layer until a crystalline uniform thin InP epitaxial layer with a thickness of about 13 monolayers is formed, that is, in an inert atmosphere of nitrogen, at a temperature of 1000 ° C for 1 hour. As a result, we have a structure free of dislocation and mismatch defects, containing 0.6 μm Si, 13 InP monolayers, 0.28 μm SiO ₂ , on a Si substrate.

Example 7

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before implantation of H ₂ ⁺ , a protective layer of silicon oxide 50 nm thick is grown on a silicon wafer, through which implantation is carried out and which is removed after implantation. For implantation, hydrogen ions with an energy of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^{-2 are used} .

The implantation of Ga ⁺ and P ⁺ ions is carried out sequentially into the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of weakly soluble and easily segregating impurities are implanted in the amorphous layer on the substrate under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of Ga ⁺ ions is 4 × 10 ¹⁵ cm ^-2 and the energy is 50 keV, the dose of P ⁺ ions is 4 × 10 ¹⁵ cm ^-2 and the energy is 50 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of these operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 350 ° C for 1 hour, as well as drying prior to the connection at 200 ° C for 0.1 hour after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out in a chamber with a vacuum level of 10 ¹ Pa.

Annealing is carried out under conditions that together ensure the segregation of impurities implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer — the amorphous layer and epitaxial growth of compounds of implanted impurities at the indicated interface of the semiconductor layer until a crystalline uniform thin GaP epitaxial layer with a thickness of about 13 monolayers is formed, that is, in an inert atmosphere of nitrogen, at a temperature of 1000 ° C for 0.5 hours. As a result, we have a structure free of dislocation and mismatch defects, containing 0.6 μm Si, 13 GaP monolayers, 0.28 μm SiO ₂ , on a Si substrate.

Example 8

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before implantation of H ₂ ⁺ , a protective layer of silicon oxide 50 nm thick is grown on a silicon wafer, through which implantation is carried out and which is removed after implantation. For implantation, hydrogen ions with an energy of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^{-2 are used} .

The In ⁺ and As ⁺ ions are implanted sequentially into the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of weakly soluble and easily segregating impurities are implanted in the amorphous layer on the substrate under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of In ⁺ ions is 4 × 10 ¹⁵ cm ^-2 and the energy is 100 keV, the dose of As ⁺ ions is 4 × 10 ¹⁵ cm ^-2 and the energy is 70 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of these operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 350 ° C for 1 hour, as well as drying prior to the connection at 200 ° C for 0.1 hour after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out in a chamber with a vacuum level of 10 ³ Pa.

Annealing is carried out under conditions that together ensure the segregation of impurities implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer — the amorphous layer and epitaxial growth of compounds of implanted impurities at the indicated interface of the semiconductor layer until a crystalline uniform thin InAs epitaxial layer with a thickness of about 13 monolayers is formed, that is, in an inert atmosphere of nitrogen, at a temperature of 1100 ° C for 0.5 hours. As a result, we have a structure free of dislocation and mismatch defects, containing 0.6 μm Si, 13 InAs monolayers, 0.28 μm SiO ₂ , on a Si substrate.

Example 9

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before implantation of H ₂ ⁺ , a protective layer of silicon oxide with a thickness of 50 nm is grown on a silicon wafer, through which implantation is carried out and which is removed after implantation. For implantation, hydrogen ions with an energy of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^{-2 are used} .

The implantation of Ga ⁺ and Sb ⁺ ions is carried out sequentially into the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of weakly soluble and easily segregating impurities are implanted in the amorphous layer on the substrate under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of Ga ⁺ ions is 5 × 10 ¹⁵ cm ^-2 and the energy is 50 keV, the dose of Sb ⁺ ions is 5 × 10 ¹⁵ cm ^-2 and the energy is 50 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of these operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 450 ° C for 1 hour, as well as drying prior to the connection at 200 ° C for 0.1 hour after washing with a jet of ultrapure deionized water and removing excess physically adsorbed substances from their surfaces, is carried out in a chamber with a vacuum level of 10 ¹ Pa.

Annealing is carried out under conditions that together ensure the segregation of impurities implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer — the amorphous layer and epitaxial growth of compounds of implanted impurities at the indicated interface of the semiconductor layer until a crystalline uniform thin GaSb epitaxial layer with a thickness of about 14 monolayers is formed, that is, in an inert atmosphere of nitrogen, at a temperature of 1100 ° C for 0.5 hours. As a result, we have a structure free of dislocation and mismatch defects, containing 0.6 μm Si, 14 GaSb monolayers, 0.28 μm SiO ₂ , on a Si substrate.

Example 10

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. For implantation, H ₂ ⁺ ions with an energy of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^{-2 are used} .

C ⁺ ions are implanted into the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of a poorly soluble and easily segregating impurity are implanted in the amorphous layer on the substrate, under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of C ⁺ ions is 1 × 10 ¹⁷ cm ^-2 and the energy is 40 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of the above operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 450 ° C for 1 hour, as well as drying prior to the connection at 200 ° C for 0.1 hour after washing with a jet of ultrapure deionized water and removing excess physically adsorbed substances from their surfaces, is carried out in a chamber with a vacuum level of 10 ¹ Pa.

Annealing is carried out under conditions that together ensure the segregation of the impurity implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer - amorphous layer and epitaxial growth at the indicated interface of the semiconductor layer of the compound of the implanted impurity with silicon until a crystalline uniform thin SiC epitaxial layer with a thickness of about 20 is formed monolayers, that is, in an inert atmosphere of nitrogen, at a temperature of 1100 ° C for 0.5 hours. As a result, we have a structure free of dislocation and mismatch defects, containing 0.65 μm Si, 20 monolayers SiC, 0.28 μm SiO ₂ , on a Si substrate.

Example 11

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before implantation of H ₂ ⁺ , a protective layer of silicon oxide with a thickness of 50 nm is grown on a silicon wafer, through which implantation is carried out and which is removed after implantation. For implantation, hydrogen ions with an energy of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^{-2 are used} .

The implantation of Ge ⁺ ions is carried out in the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of a poorly soluble and easily segregating impurity are implanted in the amorphous layer on the substrate, under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of Ge ⁺ ions is 8 × 10 ¹⁵ cm ^-2 and the energy is 40 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of the above operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 300 ° C for 25 hours, as well as drying prior to the connection at 80 ° C for 1 hour after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces, is carried out in a chamber with a level vacuum 10 ¹ Pa.

Annealing is carried out under conditions that together ensure the segregation of the impurity implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer - amorphous layer and epitaxial growth at the indicated interface of the single-crystal semiconductor layer of the implanted germanium impurity until a crystalline uniform thin epitaxial layer with a thickness of about 13 monolayers is formed that is, in an inert atmosphere of nitrogen, at a temperature of 1100 ° C for 0.5 hours. In the end result, we have a structure free from dislocation and misfit defects, containing 0.6 μm Si, 13 Ge monolayers, 0.28 μm SiO ₂ on a Si substrate.

Example 12

Hydrogen implantation is carried out in a semiconductor wafer to ensure the formation of a clipped semiconductor layer. In this case, a silicon wafer is used as a semiconductor wafer. Before implantation of H ₂ ⁺ , a protective layer of silicon oxide 50 nm thick is grown on a silicon wafer, through which implantation is carried out and which is removed after implantation. For implantation, hydrogen ions with an energy of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^{-2 are used} .

The implantation of Ge ⁺ ions is carried out in the substrate. Preliminarily, an amorphous layer is formed on the substrate, and then ions of a poorly soluble and easily segregating impurity are implanted in the amorphous layer on the substrate, under implantation conditions that ensure the concentration of the incorporated impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial semiconductor layer with a thickness of at least one monolayer. Moreover, a silicon wafer with a dielectric layer of thermally grown silicon oxide 280 nm thick as an amorphous layer is also used as a substrate. The implantation conditions are such that the dose of Ge ⁺ ions is 8 × 10 ¹⁵ cm ^-2 and the energy is 40 keV.

After these operations, a cut-off semiconductor layer is formed on a substrate containing on the working surface an amorphous layer by means of hydrogen-induced transfer from a semiconductor wafer. To do this, first, the semiconductor wafer and the substrate are subjected to processing that ensures their splicing. This treatment includes cleaning and hydrophilizing surfaces. Then, the semiconductor wafer is connected to the substrate by the parties that have undergone all of the above operations, simultaneously spliced and layered over the hydrogen implanted semiconductor wafer to form a semiconductor layer with a clipped semiconductor layer on the substrate. Connection and simultaneous splicing with delamination at a temperature of 300 ° C for 40 hours, as well as drying prior to the connection at 300 ° C for 0.1 hour after washing with a jet of ultrapure deionized water and the removal of excess physically adsorbed substances from their surfaces are carried out in a chamber with a vacuum level of 10 ² Pa.

Annealing is carried out under conditions that together ensure the segregation of the impurity implanted in the amorphous layer on the substrate to the interface of the cut-off semiconductor layer - amorphous layer and epitaxial growth at the indicated interface of the single-crystal semiconductor layer of the implanted germanium impurity until a crystalline uniform thin epitaxial layer with a thickness of about 13 monolayers is formed that is, in an inert atmosphere of nitrogen, at a temperature of 1100 ° C for 0.5 hours. In the end result, we have a structure free from dislocation and misfit defects, containing 0.6 μm Si, 13 Ge monolayers, 0.28 μm SiO ₂ on a Si substrate.

Thus, the positive effect of the proposed method for the manufacture of semiconductor heterostructures using the implantation of ions of poorly soluble and easily segregating impurities in one semiconductor wafer, hydrogen-induced transfer of the semiconductor seed layer from another semiconductor wafer and subsequent high-temperature annealing is:

1. The absence of disordering and amorphization of the semiconductor seed layer for epitaxial growth of the semiconductor heterolayer, as well as the possibility of the formation of a mismatch in the layers lying below the implantation region, as a result of implantation of impurity ions into the amorphous film.

2. The possibility of using an amorphous layer (dielectric) in the future as a separating layer, since the implantation of ions is carried out only in its thin surface layer, which, in general, allows maintaining structural perfection.

3. High structural perfection and homogeneity of the epitaxial heterolayer of the semiconductor, due to the use of a highly perfect layer of silicon transferred from another plate as an orientation layer.

4. The possibility of using a separating amorphous layer (dielectric) between the epitaxial heterolayer and a single crystal substrate to create semiconductor-on-insulator structures by removing the upper orienting layer of the semiconductor and the subsequent growth of the epitaxial layer.

5. Good compatibility of the proposed method with other technological methods used to create multilayer heterostructures based on semiconductor materials, such as, for example, liquid and gas phase epitaxy, molecular beam epitaxy and direct fusion.

These advantages are due to the exclusion of contact between the formed epitaxial layer and the single crystal substrate by implantation of impurity / impurity ions into an amorphous layer lying on the substrate, and not into the substrate, as in the known technical solutions.

Claims (17)

1. A method of manufacturing a heterostructure, which consists in the fact that the implantation of ions is carried out in a substrate, characterized in that an amorphous layer is formed first on the substrate, and then ions of a poorly soluble and easily segregating impurity or weakly soluble and easily segregating impurities are implanted in the amorphous layer on the substrate under implantation conditions that ensure the concentration of the embedded impurity that exceeds the theoretically possible solubility limit and leads to the formation of an epitaxial layer of a semiconductor with a thickness At least in one monolayer, hydrogen implantation into the semiconductor wafer is also carried out, which ensures the formation of a cut-off semiconductor layer, after these operations, a cut-off semiconductor layer is formed on a substrate containing an amorphous layer on a working surface under conditions that ensure its hydrogen-induced transfer from the semiconductor wafer then annealing is carried out under conditions that together ensure segregation of the implanted in the amorphous layer on the substrate at esi clipped to the boundary-layer amorphous semiconductor layer and the epitaxial growth on said interface monocrystalline semiconductor layer implanted dopant implanted impurities or compounds. 2. The method according to claim 1, characterized in that a silicon wafer is used as a semiconductor wafer, before the implantation of hydrogen, a protective layer of silicon oxide is grown on the semiconductor wafer, through which implantation is carried out and which is removed after implantation, and a silicon wafer is also used as a substrate with a dielectric layer as an amorphous layer. 3. The method according to claim 1, characterized in that the formation on the substrate containing on the working surface of the amorphous layer, a severed semiconductor layer under conditions that provide hydrogen-induced transfer from the semiconductor wafer, is carried out by first processing the semiconductor wafer and the substrate ensuring their splicing and including cleaning and hydrophilization of the surfaces, then the semiconductor wafer and the substrate are connected by the parties that underwent all these operations, simultaneously they spliced and delaminated over a semiconductor wafer subjected to hydrogen implantation, with the formation of a semiconductor layer cut off on an amorphous layer on the substrate, the connection and simultaneous splicing with separation, as well as drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances with their surfaces, carried out by varying the temperature at 80 ÷ 450 ° C treatments lasting from 0.1 to 100 hours, in a vacuum chamber ¹⁰ January ÷ March ¹⁰ Pa or in combination with the use aniem dry inert atmosphere. 4. The method according to claim 2, characterized in that the formation on the substrate containing on the working surface of the amorphous layer, a severed semiconductor layer under conditions that ensure hydrogen-induced transfer of it from the semiconductor wafer, is carried out by first processing the semiconductor wafer and the substrate ensuring their splicing and including cleaning and hydrophilization of the surfaces, then the semiconductor wafer and the substrate are connected by the parties that have undergone all these operations, simultaneously they spliced and delaminated over a semiconductor wafer subjected to hydrogen implantation, with the formation of a semiconductor layer cut off on an amorphous layer on the substrate, the connection and simultaneous splicing with separation, as well as drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances with their surfaces, carried out by varying the temperature at 80 ÷ 450 ° C treatments lasting from 0.1 to 100 hours, in a vacuum chamber ¹⁰ January ÷ March ¹⁰ Pa or in combination with an ASIC zovaniem dry inert atmosphere. 5. The method according to claim 1, characterized in that the implantation of hydrogen is carried out by implanting hydrogen ions with an energy value of 20 ÷ 200 keV and a dose of 2 · 10 ¹⁶ ÷ 1 · 10 ¹⁷ cm ^-2 , which ensures the formation of a cut off semiconductor layer. 6. The method according to claim 2, characterized in that the implantation of hydrogen is carried out by implanting hydrogen ions with an energy value of 20 ÷ 200 keV and a dose of 2 · 10 ¹⁶ ÷ 1 · 10 ¹⁷ cm ^-2 , which ensures the formation of a cut off semiconductor layer. 7. The method according to claim 3, characterized in that the implantation of hydrogen is carried out by implanting hydrogen ions with an energy value of 20 ÷ 200 keV and a dose of 2 · 10 ¹⁶ ÷ 1 · 10 ¹⁷ cm ^-2 , which ensures the formation of a cut off semiconductor layer. 8. The method according to claim 4, characterized in that the implantation of hydrogen is carried out by implanting hydrogen ions with an energy value of 20 ÷ 200 keV and a dose of 2 · 10 ¹⁶ ÷ 1 · 10 ¹⁷ cm ^-2 , which ensures the formation of a cut off semiconductor layer. 9. The method according to claim 1, characterized in that ions of a poorly soluble and easily segregating impurity, such as germanium or carbon ions, are implanted in an amorphous layer on a substrate, or ions of weakly soluble and easily segregating impurities, such as antimony and indium ions, are implanted or gallium and arsenic, or gallium and antimony, or indium and arsenic, or gallium and phosphorus, or indium and phosphorus, under conditions providing a concentration of embedded impurity exceeding the theoretically possible solubility limit and leading to the formation of an epitaxial layer a semiconductor with a thickness of at least one monolayer, such as an ion dose of 1 · 10 ¹⁵ to 1 · 10 ¹⁷ cm ^-2 , and an energy value of 20 to 500 keV. 10. The method according to claim 2, characterized in that ions of a poorly soluble and easily segregating impurity, such as germanium or carbon ions, are implanted in an amorphous layer on a substrate, or ions of weakly soluble and easily segregating impurities such as antimony and indium ions are implanted, or gallium and arsenic, or gallium and antimony, or indium and arsenic, or gallium and phosphorus, or indium and phosphorus, under conditions providing a concentration of embedded impurity exceeding the theoretically possible solubility limit and leading to the formation of epitaxial c oya semiconductor thick in at least one monolayer such as ion dose value equal to 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ^-2 and an energy value equal to 20 to 500 keV. 11. The method according to claim 3, characterized in that ions of a poorly soluble and easily segregating impurity, such as germanium or carbon ions, are implanted in an amorphous layer on a substrate, or ions of weakly soluble and easily segregating impurities, such as antimony and indium ions, are implanted or gallium and arsenic, or gallium and antimony, or indium and arsenic, or gallium and phosphorus, or indium and phosphorus, under conditions providing a concentration of embedded impurity exceeding the theoretically possible solubility limit and leading to the formation of epitaxial c oya semiconductor thick in at least one monolayer such as ion dose value equal to 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ^-2 and an energy value equal to 20 to 500 keV. 12. The method according to claim 4, characterized in that ions of a poorly soluble and easily segregating impurity, such as germanium or carbon ions, are implanted in an amorphous layer on a substrate, or ions of weakly soluble and easily segregating impurities, such as antimony and indium ions, are implanted or gallium and arsenic, or gallium and antimony, or indium and arsenic, or gallium and phosphorus, or indium and phosphorus, under conditions providing a concentration of embedded impurity exceeding the theoretically possible solubility limit and leading to the formation of epitaxial c oya semiconductor thick in at least one monolayer such as ion dose value equal to 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ^-2 and an energy value equal to 20 to 500 keV. 13. The method according to claim 5, characterized in that ions of a poorly soluble and easily segregating impurity, such as germanium or carbon ions, are implanted in an amorphous layer on a substrate, or ions of weakly soluble and easily segregating impurities, such as antimony and indium ions, are implanted or gallium and arsenic, or gallium and antimony, or indium and arsenic, or gallium and phosphorus, or indium and phosphorus, under conditions providing a concentration of embedded impurity exceeding the theoretically possible solubility limit and leading to the formation of epitaxial c oya semiconductor thick in at least one monolayer such as ion dose value equal to 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ^-2 and an energy value equal to 20 to 500 keV. 14. The method according to claim 6, characterized in that ions of a poorly soluble and easily segregating impurity, such as germanium or carbon ions, are implanted in an amorphous layer on a substrate, or ions of weakly soluble and easily segregating impurities, such as antimony and indium ions, are implanted or gallium and arsenic, or gallium and antimony, or indium and arsenic, or gallium and phosphorus, or indium and phosphorus, under conditions providing a concentration of embedded impurity exceeding the theoretically possible solubility limit and leading to the formation of epitaxial c oya semiconductor thick in at least one monolayer such as ion dose value equal to 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ^-2 and an energy value equal to 20 to 500 keV. 15. The method according to claim 7, characterized in that ions of a poorly soluble and easily segregating impurity, such as germanium or carbon ions, are implanted in an amorphous layer on a substrate, or ions of weakly soluble and easily segregating impurities, such as antimony and indium ions, are implanted or gallium and arsenic, or gallium and antimony, or indium and arsenic, or gallium and phosphorus, or indium and phosphorus, under conditions providing a concentration of embedded impurity exceeding the theoretically possible solubility limit and leading to the formation of epitaxial c oya semiconductor thick in at least one monolayer such as ion dose value equal to 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ^-2 and an energy value equal to 20 to 500 keV. 16. The method according to claim 8, characterized in that ions of a poorly soluble and easily segregating impurity, such as germanium or carbon ions, are implanted in an amorphous layer on a substrate, or ions of weakly soluble and easily segregating impurities, such as antimony and indium ions, are implanted or gallium and arsenic, or gallium and antimony, or indium and arsenic, or gallium and phosphorus, or indium and phosphorus, under conditions providing a concentration of embedded impurity exceeding the theoretically possible solubility limit and leading to the formation of epitaxial c oya semiconductor thick in at least one monolayer such as ion dose value equal to 1 × 10 ¹⁵ to 1 × 10 ¹⁷ cm ^-2 and an energy value equal to 20 to 500 keV. 17. The method according to any one of claims 1 to 16, characterized in that the annealing is carried out under conditions that together ensure the segregation of the impurity implanted in the amorphous layer on the substrate to the interface of the cut off semiconductor layer - an amorphous layer and epitaxial growth at the specified interface of a single crystal semiconductor a layer of implanted impurities or compounds of implanted impurities, namely, when the annealing temperature is 500 ÷ 1100 ° C and its duration is 0.5 ÷ 100 hours

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