RU2497231C1 - Method for making silicon-on-insulator structure - Google Patents

Abstract

FIELD: electricity.

SUBSTANCE: method for making silicon-on-insulator structure involves implantation to amorphous insulating SiO₂ layer of a silicon substrate of ions of easily diffusing mixture removing irregular connections and saturating failed connections in SiO₂ layer and/or at the boundary between SiO₂ layer and surface layer of silicon - F⁺. A localisation area of implanted impurity is formed under conditions providing concentration of implemented impurity of not less than 0.05 at % and not more than 1 at %, which is sufficient for elimination of negative occurrences of irregular and failed connections, at doses of not less than 3×10¹⁴ cm^-2 and less than 5×10¹⁵ cm^-2. A silicon donor substrate is connected to SiO₂ layer of the substrate and splicing is performed with formation of a surface silicon layer of the required thickness on SiO₂, thus making silicon-on-insulator structure. Finally, annealing is performed under conditions providing diffusion of introduced impurity with removal of irregular connections and saturation of failed connections in SiO₂ and/or at the boundary between SiO₂ layer and SiO surface layer, at the temperatures of 700-1100°C, with duration of more than 0.5 hour, in inert atmosphere.

EFFECT: improving quality of the structure, enlarging application field of the method for creation of devices with increased stability to action of ionising emission.

12 cl, 2 dwg

Description

The invention relates to semiconductor technology and can be used to create modern instrument structures of micro- and nanoelectronics, in particular multilayer semiconductor structures and multilayer semiconductor-dielectric structures in the manufacture of super large integrated circuits (VLSI) and other products of semiconductor technology with increased radiation resistance.

A known method of manufacturing a silicon-on-insulator structure (US patent No. 5360752 for the invention, IPC: 5 H01L 21/76), which consists in taking a substrate with an insulating layer made on its surface, into which ions are implanted to form recombination centers gettering the impurity, after which they take the silicon donor substrate, connect it to the insulating layer of the substrate and carry out splicing, anneal in the temperature regime up to 850 ° C, finally form the surface layer of silicon of the required thickness, etching a non-planar face of the silicon donor substrate, pitting the donor substrate to the desired thickness of the surface silicon layer. The method uses a silicon substrate. As an insulating layer, a silicon oxide layer 350 to 450 nm thick is made. The implantation of ions to form recombination centers that getter the impurity in the insulating layer is carried out in two stages in order to obtain a uniform distribution of the recombination centers; First they carry out “deep” implantation, and then “shallow”. Before joining and splicing, a cleaning procedure is carried out. Carry out annealing in the temperature regime up to 850 ° C, mainly at 800 ° C. As implantable impurities use germanium or arsenic.

The disadvantages of the known technical solutions include the low quality of the silicon-on-insulator structures, the limitation of the technological field of application - in particular, when creating VLSI with high radiation resistance. The reasons for the disadvantages are as follows.

First, the implantation modes used increase the radiation load on the buried dielectric (insulating layer) of the silicon-on-insulator structure, thereby reducing the quality of the dielectric.

Secondly, the implantation modes used provide a large dispersion in the distribution of implanted ions in the dielectric, which impairs the quality of the interface between the silicon oxide layer and the silicon substrate.

Third, the use of recombination centers in silicon oxide as gettering centers for impurity atoms reduces the structural uniformity of the dielectric layer and leads to the degradation of its properties.

Fourth, the annealing modes used, at temperatures below 850 ° C, reduce the efficiency of the created silicon-on-insulator structures, often making them unsuitable in current silicon technology using high-temperature conditions to ≥1000 ° C.

As the closest analogue, a method of manufacturing a silicon-on-insulator structure was selected (publication No. 0652591 of the European application for the invention, application No. 94116233.1 of 10/14/94, IPC: 6 H01L 21/76, publ. 05/10/95, Bull . 95/19), which consists in the fact that they take a substrate with an insulating layer made on its surface, into which ions are implanted to form recombination centers that getter an impurity, after which a silicon donor substrate is taken, an insulating layer is made on its surface, connected substrate and silicon donor substrate with the insulating layers and carry out splicing, then annealing in the temperature regime up to 850 ° C; finally, the surface layer of silicon of the required thickness is formed, etching the non-planar side of the silicon donor substrate, etching the donor substrate to the required thickness of the silicon surface layer - from 70 to 100 nm The method uses a silicon substrate. As the insulating layer, a silicon oxide layer 350 to 450 nm thick is made. The implantation of ions to form recombination centers that getter the impurity in the insulating layer of the substrate and the donor substrate is carried out in two stages in order to obtain a uniform distribution of recombination centers; First they carry out “deep” implantation, and then “shallow”. Before joining and splicing, a cleaning procedure is carried out. Carry out annealing in the temperature regime up to 850 ° C, mainly at 800 ° C. As implantable impurities use germanium or arsenic.

The disadvantages of the known technical solutions include the low quality of the silicon-on-insulator structures, the limitation of the technological field of application - in particular, when creating VLSI with high radiation resistance. The reasons for the disadvantages are as follows.

First, the implantation modes used increase the radiation load on the buried dielectric (insulating layers) of the silicon-on-insulator structure, thereby reducing the quality of the dielectric.

Secondly, the implantation modes used provide a large dispersion in the distribution of implanted ions in the dielectric, which impairs the quality of the interface between the silicon oxide layer and the silicon substrate.

Third, the use of recombination centers in silicon oxide as gettering centers for impurity atoms reduces the structural uniformity of the dielectric layer and leads to the degradation of its properties.

Fourth, the annealing modes used, at temperatures below 850 ° C, reduce the efficiency of the created silicon-on-insulator structures, often making them unsuitable in current silicon technology using high-temperature conditions to ≥1000 ° C.

The technical result of the invention is:

- improving the quality of the structure of the silicon-on-insulator;

- expansion of the technological scope of the method.

The technical result is achieved in a method for manufacturing a silicon-on-insulator structure, which consists in taking a substrate with an insulating layer made on its surface, into which the implantation of ions is carried out, connecting a silicon donor substrate to the insulating layer of the substrate, and splicing, annealing, form a surface layer of silicon of the required thickness, and implantation is carried out in an amorphous insulating layer of ions of easily diffusing impurities, removing irregular bonds and saturating dangling bonds in am the orphan insulating layer and / or at the interface between the amorphous insulating layer and the surface layer of silicon, with the formation of a localized region of the implanted impurity, under conditions ensuring the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, then the substrate is connected by an amorphous insulating layer with a silicon donor substrate and splicing, form the surface layer of silicon of the required thickness, annealing is carried out in the final, under conditions providing diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

In the method, a silicon oxide layer is grown in the composition of the silicon donor substrate.

In the method, a silicon substrate is used as a substrate, and a silicon oxide dielectric as an amorphous insulating layer on its surface.

In the method for forming a surface layer of silicon of the required thickness before joining the silicon donor substrate with the amorphous insulating layer of the substrate in the donor substrate, a softened region is created at a desired distance from the working surface, thereby highlighting a cut-off silicon surface layer of a given thickness to be transferred to amorphous insulating layer of the substrate.

In the method, a softened zone in the donor substrate at the required distance from the working surface is created by implanting hydrogen ions with an energy value of 20 ÷ 200 keV and a dose of 2 × 10 ¹⁶ ÷ 1 × 10 ¹⁷ cm ^-2 .

In the method, before the hydrogen implantation, a protective layer of silicon oxide is grown on the working surface of the silicon donor substrate, through which the implantation is carried out and which is removed after implantation.

In the method, ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localization region of the implanted impurity, namely, ions fluoride.

In the method, implantation is carried out under conditions providing a concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.%.

In the method, the concentration of embedded impurity ions of not less than 0.05 at.% And not more than 1 at.% Is achieved using doses of implantable ions of at least 3 × 10 ¹⁴ cm ^-2 and less than 5 × 10 ¹⁵ cm ^-2 .

In the method, the formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface of the silicon layer transferred from the donor substrate to the surface layer of silicon, at a distance from the interface of the splicing equal to less than the diffusion length of the implanted impurity during subsequent annealing, the specified due to implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of atoms impurity with said localization in an amorphous insulating layer, from 20 to 50 keV.

In the method, the substrate is joined by an amorphous insulating layer with a silicon donor substrate and spliced, a silicon surface layer of the required thickness is formed as follows: a donor substrate with a weakened zone created by implanting hydrogen ions and a substrate with an amorphous insulating layer in which a localization region is formed implanted impurities, are subjected to processing ensuring their splicing, - cleaning and hydrophilization of the surfaces on which the splicing is performed, the working surface donor substrates, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer, after which the silicon donor substrate is connected to the substrate with the amorphous insulating layer by the parties to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate with the formation on the amorphous insulating layer of the substrate of the cut-off surface layer of silicon, while the connection and simultaneous splicing with delamination, as well as the preceding compound Drying after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out with temperature varying from 80 to 450 ° C, duration of procedures from 0.1 to 100 hours, in a chamber with vacuum 10 ¹ ÷ 10 ³ Pa or combined with inert dry atmosphere.

In the method, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 700 ÷ 1100 ° C. duration of at least 0.5 hours, as well as the presence of an inert atmosphere.

The invention is illustrated by the following description and the accompanying figures.

Figure 1 schematically shows the process of manufacturing a silicon-on-insulator structure: I - the formation in the silicon substrate of the donor at the required distance from the working surface of the demarcated zone with structural changes by implantation of hydrogen ions, releasing a clipped surface layer of silicon transferred to the insulator of the substrate, II - implantation into the amorphous insulating layer of the substrate of ions of easily diffusing impurities capable of removing irregular bonds and saturating dangling bonds in the amorphous insulating layer and and at the interface between the amorphous insulating layer and the transferred silicon layer, the formation of the localized region of the implanted impurity at the depth of the implanted impurity ions. III - drying to remove excess physically adsorbed substances from surfaces, bonding and bonding of the substrate and the silicon donor substrate with the transfer of the clipped surface layer of silicon to the substrate insulator in a vacuum chamber or inert atmosphere, IV - high-temperature processing (annealing) after receiving the clipped surface layer of silicon on a substrate with an amorphous insulating layer that has undergone implantation, diffusion of the impurity implanted in the amorphous insulating layer to the interface of the cut-off surface layer silicon - an amorphous insulating layer and the formation of additional bonds between the atoms of the implanted impurity and the atoms of the volume of the amorphous insulating layer, as well as between the atoms of the implanted impurity and the atoms of the amorphous insulating layer and / or atoms of the crystalline cut off surface silicon layer at the interface, where 1 is the donor substrate ; 2 - softened zone; 3 - substrate; 4 - amorphous insulating layer; 5 - region of localization of the implanted impurity; 6 - cut off surface layer of silicon; 7 - atoms of an implanted and diffused impurity, forming bonds in an amorphous insulating layer; 8 — atoms of an implanted and diffused impurity, forming bonds at the interface between the amorphous insulating layer and the crystalline cut-off surface silicon layer.

Figure 2 shows the current-voltage drain-gate characteristics of p-type ring transistors made on the basis of silicon-on-insulator structures, with a bias between the source and drain of +5 V, where 9 is a curve for the case of using structures with an amorphous insulating layer without implantation of ions of easily diffusing impurities into it, capable of removing irregular bonds and saturating dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the transferred silicon layer; 10 is a curve for the case of using structures with an amorphous insulating layer with the implantation of ions of easily diffusing impurities that can remove irregular bonds and saturate dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the transferred silicon layer, namely, fluorine ions with an energy of 20 keV dose of 1 × 10 ¹⁵ cm ^-2 ; 11 is a curve for the case of using structures with an amorphous insulating layer with the implantation of ions of easily diffusing impurities into it, capable of removing irregular bonds and saturating dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the transferred silicon layer, namely, fluorine ions with an energy of 30 keV dose of 3 × 10 ¹⁵ cm ^-2 ; 12 is a curve for the case of using structures with an amorphous insulating layer with the implantation of ions of easily diffusing impurities into it, capable of removing irregular bonds and saturating dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the transferred silicon layer, namely, fluorine ions with an energy of 40 keV dose of 3 × 10 ¹⁵ cm ^-2 .

The achievement of the technical result in the proposed method of manufacturing a silicon-on-insulator structure using ion implantation and direct transfer based on physical laws governing the transfer processes of semiconductor layers is based on the physical laws of the process of diffusion of implanted impurities to the interface, the process of weakening and substitution of parasitic bonds in amorphous insulating layer and at the interface by bonds formed due to interaction with atoms of the implanted impurity (Ф ig. 1). In confirmation of the legitimacy of physical representations of the achievement of a technical result, experimental data are given (Figure 2).

As is known, the transfer processes of semiconductor layers using low-temperature splicing of semiconductor wafers with the simultaneous transfer of a thin film are based on the difference in surface energies of pairs of hydrophilic and hydrophobic surfaces in different temperature ranges. In the patented technical solution (RF patent No. 2217842 for the invention “A method for manufacturing a silicon-on-insulator structure” by V.P. Popov and I.E. Tyschenko), this feature was the basis for creating Si / SiO ₂ / Si structures. Depending on the purity of the fused surfaces of the plates, this difference in surface energies can reach several orders of magnitude. In a broad sense, the creation of semiconductor heterostructures should be considered as a process of joining hydrophilic surfaces, including splicing of semiconductor wafers, and rupture of hydrophobic surfaces - hydrogen-induced transfer with the formation of a silicon surface layer of the required thickness on one of the fused wafers. In this regard, one of the tasks in the manufacture of the silicon-on-insulator structure according to the proposed method (Fig. 1, stages I and III) is the formation on a substrate 3 containing on the working surface an amorphous insulating layer 4, a cut off surface layer of silicon 6 by means of hydrogen -induced transfer from a semiconductor wafer that acts as a donor substrate 1, in which, to carry out transfer, a softened zone 2 with structural changes through the implantation of hydrogen ions is obtained, hydrophobic surfaces.

In solving this problem, the following should be taken into account. In any case, the parameters determining the surface energy are the temperature and the high structural quality of the surfaces — the quality of the joined and spliced surfaces of the silicon donor substrate 1 and substrate 3 with an amorphous insulating layer 4. In this regard, one of the main requirements necessary to achieve a complete (100%) hydrophilic connection of semiconductor wafers, in particular, a silicon donor substrate 1 and a substrate 3 with an amorphous insulating layer 4, is to ensure the highest possible cleanliness of the surface the rest of the fused plates, the absence of physically adsorbed impurities on the initial surfaces and the subsequent direct conduct of the very hydrophilization of the surfaces of the plates. After hydrophilization of the silicon donor substrate 1 and substrate 3 with an amorphous insulating layer 4, they should be dried and physically adsorbed substances removed from the surfaces, for which they are placed in a centrifuge of a vacuum chamber and heated there to the temperatures necessary for this. Then they are paired.

Internal hydrophobic surfaces in adjacent atomic planes that are parallel to the wafer surface are preliminarily obtained in a semiconductor layer when a softened zone 2 is formed in it, characterized by structural changes, by implantation of hydrogen ions. The formation of a weakened zone 2 and, in particular, of the indicated hydrophobic surfaces occurs by the formation of bonds in the X-H-H-X layer undergoing implantation due to the capture of hydrogen on the stretched and weakened X-X bonds of the semiconductor matrix perpendicular to the surface. In order to ensure the presence of two hydrophobic (100) planes with full (100%) X-H-H-X bonds in the formation of a weakened zone 2 by implantation, doses of H ⁺ , H ₂ ⁺ ions are required to ensure at the depth of the average projective range of ions R _p from 2 × 10 ¹⁶ cm ^-2 and higher at their energies from 20 to 200 keV. The formation of a weakened zone 2 and hydrophobic surfaces is the beginning of the formation of the required thickness in the structure of the silicon surface layer manufactured by the proposed method. The thickness is set by selecting the mode of ion implantation.

Further, another task in the manufacture of the silicon structure on the insulator, the solution of which, in fact, ensures the achievement of the technical result, is to eliminate in the amorphous insulating layer 4 located on the substrate 3 and at the interfaces between the latter and the cut-off silicon surface layer 6 excessive irregular bonds, saturation of dangling bonds (Figure 1, stage II and IV). The solution of the problem involves two actions - firstly, the implantation of an easily diffusing impurity into the amorphous insulating layer 4, capable of reacting with matrix atoms and eliminating structural defects, as a result of the first step, obtaining the localized region of the implanted impurity 5 in the amorphous insulating layer 4 ( 1, stage II), secondly, the implementation of high-temperature processing (annealing), ensuring the flow of diffusion of the embedded impurities in the amorphous insulating layer 4, as a result of the second action - diffusion when hast to the interfaces, in particular, between the amorphous insulating layer 4 and the truncated surface silicon layer 6 with the saturation of dangling bonds and elimination of parasitic irregular linkages through the interaction of the implanted impurity atoms to said structural defects (Figure 1, step IV).

These actions lead to the formation of additional bonds with the elimination of spurious irregular bonds, saturation of dangling bonds between atoms diffusing from the localized region of the implanted impurity 5, and atoms of the amorphous insulating layer 4 (corresponds, in FIG. 1, stage IV, position 7 - atoms of the implanted and diffused impurities that form bonds in the amorphous insulating layer) or between atoms diffusing from the localized region of the implanted impurity 5 and atoms at the interface between the amorphous the layer and the transferred single-crystal layer (see Figure 1, stage IV, position 8 — atoms of the implanted and diffused impurity, forming bonds at the interface between the amorphous insulating layer and the crystalline cut-off surface silicon layer).

The result is based on the ability of some impurity atoms to eliminate structural defects by forming new energetically favorable bonds with matrix atoms. For example, the formation of Si-F bonds is more energetically favorable compared with the formation of Si-Si bonds, which determine the presence of intrinsic defects in the silicon oxide matrix. This is due to the fact that the length of the Si-Si bond is almost 2 times longer (V. A. Gritsenko. Atomic structure of amorphous non-stoichiometric silicon oxides and nitrides. Uspekhi Fiz. Nauk, 157 (2008), pp. 727-737) Si F bonds (J. Breidung, J. Demeison, L. Margules, W. Thiel. Equilibrium structures of SiF _4. Chem. Phys. Lett, v. 313 (1999), pp713-717). Therefore, the presence of fluorine atoms in the silicon oxide matrix can lead to the elimination of Si-Si bonds (CMS Rauthan, GS Virdi, BC Pathak, A. Karthigeyan. Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation. J.Appl Phys. V.83, N7, pp3668-3677), which are electrically active traps of positive charges. Another feature of atoms such as F is its ability to easily diffuse in an amorphous insulating layer, such as silicon oxide, and migrate to the boundaries between the amorphous insulating layer and the semiconductor layers, forming additional bonds there, thus eliminating electrically active structural defects. This leads to a decrease in the positive fixed charge inside the amorphous insulating layer, which, in turn, leads to a shift in the current-voltage drain-gate characteristics to the region of positive biases, in particular, for p-type ring transistors made on the basis of silicon-on structures an insulator with a buried dielectric (amorphous insulating layer) into which fluoride ions were implanted, compared with the characteristics obtained in the case of using silicon-on-insulator structures with buried dielectric layer without implantation of fluorine ions (see Figure 2, respectively, position 10-12 and position 9). Obtained in practice, the current-voltage drain-gate characteristics (Figure 2) testify in favor of higher quality structures of silicon-on-insulator, manufactured by the proposed method, and a wider technological scope of the method.

Based on the stated physical concepts, the manufacture of a silicon structure on an insulator with the achievement of a technical result is ensured by the implementation of the following stages (see Figure 1).

1. In the silicon wafer - the donor substrate 1, a softened zone 2 is formed at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness, which should be transferred to the substrate insulator during further operations. To form a weakened zone 2, hydrogen implantation is carried out in the donor substrate 1. Before hydrogen implantation, a protective layer of silicon oxide can be grown on the working surface of the silicon wafer - the donor substrate 1, through which implantation is carried out and which is removed after implantation. For implantation using hydrogen ions with an energy value of 20 ÷ 200 keV and doses of 2 × 10 ¹⁶ ÷ 1 × 10 ¹⁷ cm ^-2 (I stage. Figure 1). Carrying out this stage gives rise to the formation in the fabricated structure of the surface layer of silicon of the required thickness, that is, this stage is the initial stage of formation of the surface layer of silicon of the required thickness.

2. Carry out the first stage in solving the problem of improving the quality of the silicon-on-insulator structure and expanding the technological scope of the method. The stage is aimed at introducing impurities into the amorphous insulating layer 4 to improve the fabricated structure, eliminating the excess irregular bonds in the amorphous insulating layer 4 located on the substrate 3 and at the interfaces of the latter with the cut-off silicon surface layer 6, and saturation of the dangling bonds. The amorphous insulating layer 4 on the substrate 3 is implanted with ions of easily diffusing impurities that can remove irregular bonds and saturate dangling bonds in the amorphous insulating layer 4 and at the interface between the amorphous insulating layer 4 and the single-crystal semiconductor layer — the transferred silicon layer onto the amorphous insulating layer 4 , forming the localization region of the implanted impurity 5 (stage II, Figure 2). The implantation conditions are selected based on the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of electrically active defects. That is, the concentration should be sufficient to eliminate irregular and saturation of the dangling bonds in the amorphous insulating layer 4 and at the interfaces between the amorphous insulating layer 4 and the transferred single-crystal layer — the cut off surface layer of silicon 6, as well as, if possible, the amorphous insulating layer 4 and single-crystal substrate 3. In particular, the concentration of embedded ions is not less than 0.05 at.% and not more than 1 at.%. In this case, the energy value is selected that ensures the formation of an impurity atom distribution profile in half of the amorphous insulating layer 4 adjacent to the boundary of the merging with this layer of a single-crystal semiconductor layer transferred from the donor substrate 1, that is, the cut-off silicon surface layer 6, at a distance from the merging boundary , comparable with the diffusion length of implanted atoms, less than the diffusion length during subsequent annealing. For the used amorphous insulating layers 4 in the structures indicated in the following implementation examples, as well as the conditions for subsequent annealing, implantation conditions include the use of ion doses of at least 3 × 10 ¹⁴ cm ^-2 and less than 5 × 10 ¹⁵ cm ^-2 and energies from 20 to 50 keV. In the case of other parameters of the amorphous insulating layers 4 in the structures, including the quality of the dielectric, its thickness, as well as the annealing conditions, the implantation conditions will differ from those indicated. As ions that are easily diffusing and eliminating excess irregular and dangling bonds, impurities use fluorine ions. As the substrate 3, a silicon wafer is also used. As the amorphous insulating layer 4, a silicon oxide dielectric is used. The amorphous insulating layer 4 is preliminarily performed on the substrate 3, for example, by its oxidation.

3. After the above stages of fabrication of the structure, proceed to the final stage of forming the surface layer of silicon of the required thickness (stage III. Figure 1) and, in fact, obtaining a structure whose quality is to be improved in the course of further operations. On the substrate 3, containing on the working surface an amorphous insulating layer 4, a cut-off surface layer of silicon 6 is formed due to hydrogen-induced transfer. To realize the transfer, the donor substrate 1 with the weakened zone 2 created by implantation of hydrogen ions and the substrate 3 with an amorphous insulating layer 4, in which the region of localization of the implanted impurity 5 is formed, is subjected to processing that ensures their fusion. This treatment includes cleaning and hydrophilizing the surfaces on which the splicing is performed, the working surface of the donor substrate 1, from which hydrogen ions are implanted, and the surfaces of the amorphous insulating layer 4 (see Figure 1, stage III). Then, the silicon donor substrate 1 is connected to the substrate 3 with an amorphous insulating layer 4 by the sides that have undergone the above procedures, at the same time they are spliced and layered along the weakened region 2 of the donor substrate 1 to form a cut-off silicon layer on the amorphous insulating layer 4 of the substrate 3. Compounding and simultaneous splicing with delamination, as well as drying prior to joining after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces, is carried out with temperature varying from 80 to 450 ° C, the duration of the procedures is from 0.1 to 100 hours, a chamber with a vacuum of 10 ¹ ÷ 10 ³ Pa or in combination with an inert dry atmosphere.

4. After the actual structure of the silicon-on-insulator is made, proceed to the final stage of solving the problem of improving the quality of the structure of the silicon-on-insulator and expanding the technological scope of the method. The purpose of this stage is to diffuse the embedded impurity and eliminate in the amorphous insulating layer 4 located on the substrate 3 and at the interfaces between the latter and the clipped surface layer of silicon 6 excessive (parasitic) irregular bonds, saturation of dangling bonds. At this stage of the fabrication of the silicon-on-insulator structure (stage IV, FIG. 1), annealing is carried out under conditions that together ensure the diffusion of the impurity implanted in the amorphous insulating layer 4 on the substrate 3 from the localized region of the implanted impurity 5 to the interfaces, in particular the boundary, the cut-off silicon surface layer 6 is an amorphous insulating layer 4, elimination of excess irregular bonds at the interface and in the layer itself, saturation of the dangling bonds as a result of the interaction of atoms of the embedded impurity by decree electrically active defects. At the same time, there is no possibility of endotaxial formation of an additional continuous layer of dielectric material, as, for example, this occurs in the well-known technical solution (RF patent No. 2368034 for the invention, IPC: 8 H01L 21/324), due to which the quality of the structure is improved in the given technical solution. . Annealing conditions - the temperature regime and its duration, namely, annealing temperatures of 700-1100 ° C, a duration of at least 0.5 hours, as well as the presence of an inert atmosphere. Note that these specific conditions of annealing are valid in cases where a localized region of embedded impurity 5 is formed or an impurity atom distribution profile is formed, as indicated above, in a half of an amorphous insulating layer 4 adjacent to the interface of the cut-off surface layer transferred from the donor substrate 1 to this layer silicon 6, at a distance from the boundary of the splicing, comparable with the diffusion length of the implanted impurity atoms during annealing. In other cases, specific annealing modes will differ from those indicated.

The main difference between the proposed method and the closest technical solution lies in the implementation of the amorphous insulating layer on the substrate, acting as an amorphous matrix, implantation of ions of easily diffusing impurities that can remove excess irregular bonds and saturate dangling bonds, then transferring a single-crystal semiconductor layer onto the amorphous insulating layer on the substrate from another plate, and high-temperature annealing, which ensures diffusion of the implanted impurity to the interface In this case, a higher-quality silicon-on-insulator structure is formed.

The achievement of the technical result is ensured by implanting the impurity ions involved in the formation of additional bonds with doses sufficient to eliminate spurious bonds and / or saturation of the dangling bonds in the amorphous insulating layer and / or at the splicing boundary as a result of diffusion during annealing. Thus, the absence of spurious and dangling bonds in the buried amorphous insulating layer of the structure, at the interface between this layer and the transferred silicon layer, which are traps of positive charges, as well as the absence of dangling unsaturated bonds at the interface, which leads to an improvement in the electrical characteristics of the silicon-on structure, are achieved. -insulator, providing low density of states at the interfaces between the layers of the silicon-on-insulator structure and fixed charges in the buried morphic insulating layer when exposed to ionizing radiation.

As information confirming the possibility of implementing the proposed method, we give the following examples.

Example 1

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer of silicon oxide 50 nm thick is grown on the working surface of the silicon donor substrate, through which implantation is carried out and which is removed after implantation.

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a silicon oxide thickness of 150 nm. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 3 × 10 ¹⁴ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 20 keV.

Next, the substrate is connected by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed - the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. The connection and simultaneous splicing with delamination is carried out at a temperature of 450 ° C for 0.5 hours, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out at 200 ° C for 0 1 hour. The operations are carried out in a chamber with a vacuum of 10 ³ Pa.

Final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 900 ° C, duration 0, 5 hours, in an inert atmosphere of nitrogen.

The result is a structure free of dislocation and mismatch defects containing 0.6 μm Si and 0.15 μm SiO ₂ on a Si substrate.

Example 2

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating a layer and a surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer of silicon oxide 50 nm thick is grown on the working surface of the silicon donor substrate, through which implantation is carried out and which is removed after implantation.

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a thickness of silicon oxide of 400 nm. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 1 × 10 ¹⁵ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 20 keV.

Then, the substrate is joined by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed — the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. The connection and simultaneous splicing with delamination is carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out at 200 ° C for 0.1 hours. The operations are carried out in a chamber with a vacuum of 10 Pa.

Final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 900 ° C, duration 0, 5 hours, in an inert atmosphere of nitrogen.

The result is a structure free from dislocation and mismatch defects containing 0.6 μm Si and 0.4 μm SiO ₂ on a Si substrate.

Example 3

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ⁺ with an energy value of 20 keV and a dose of 4 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer of silicon oxide 5 nm thick is grown on the working surface of the silicon donor substrate, through which implantation is carried out and which is removed after implantation.

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a thickness of silicon oxide of 400 nm. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 1 × 10 ¹⁵ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 30 keV.

Then, the substrate is joined by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed — the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. The connection and simultaneous splicing with delamination is carried out at a temperature of 200 ° C for 0.15 hours in an inert dry atmosphere, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out at 200 ° C , for 0.1 hours, in a chamber with a vacuum of 10 Pa.

Final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 1000 ° C, duration 0, 5 hours, in an inert atmosphere of nitrogen.

The result is a structure free from dislocation and mismatch defects containing 0.2 μm Si and 0.4 μm SiO ₂ on a Si substrate.

Example 4

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 200 keV and a dose of 1 × 10 ¹⁷ cm ^-2 . Before hydrogen implantation, a protective layer of silicon oxide 50 nm thick is grown on the working surface of the silicon donor substrate, through which implantation is carried out and which is removed after implantation.

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a thickness of silicon oxide of 300 nm. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 1 × 10 ¹⁵ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 40 keV.

Then, the substrate is joined by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed — the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. The connection and simultaneous splicing with delamination is carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out at 200 ° C for 0.1 hours. The operations are carried out in a chamber with a vacuum of 10 Pa.

Final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 1100 ° C, duration 0, 5 hours, in an inert atmosphere of nitrogen.

The result is a structure free from dislocation and mismatch defects containing 0.7 μm Si and 0.3 μm SiO ₂ on a Si substrate.

Example 5

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 120 keV and a dose of 2 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer of silicon oxide 50 nm thick is grown on the working surface of the silicon donor substrate, through which implantation is carried out and which is removed after implantation.

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a thickness of silicon oxide of 400 nm. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 1 × 10 ¹⁵ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 50 keV.

Next, the substrate is connected by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed - the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out at 200 ° C for 0.1 hours. The operations are carried out in a chamber with a vacuum of 10 ² Pa.

Final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 1100 ° C, duration 2 hours in an inert atmosphere of nitrogen.

The result is a structure free of dislocation and mismatch defects containing 0.5 μm Si and 0.4 μm SiO ₂ on a Si substrate.

Example 6

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer of silicon oxide 50 nm thick is grown on the working surface of the silicon donor substrate, through which implantation is carried out and which is removed after implantation.

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a thickness of silicon oxide of 400 nm. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 3 × 10 ¹⁵ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 30 keV.

Next, the substrate is connected by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed - the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out at 200 ° C for 0.1 hours. The operations are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 950 ° C, for 1 hours, in an inert atmosphere of nitrogen.

The result is a structure free from dislocation and mismatch defects containing 0.6 μm Si and 0.4 μm SiO ₂ on a Si substrate.

Example 7

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer of silicon oxide 50 nm thick is grown on the working surface of the silicon donor substrate, through which implantation is carried out and which is removed after implantation.

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a thickness of silicon oxide of 400 nm. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 3 × 10 ¹⁵ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 40 keV.

Next, the substrate is connected by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed - the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out at 200 ° C for 0.1 hours. The operations are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 1000 ° C for 1 hour in an inert atmosphere of nitrogen.

The result is a structure free from dislocation and mismatch defects containing 0.6 μm Si and 0.4 μm SiO ₂ on a Si substrate.

Example 8

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer of silicon oxide 50 nm thick is grown on the working surface of the silicon donor substrate, through which implantation is carried out and which is removed after implantation.

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a thickness of silicon oxide of 400 nm. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 4 × 10 ¹⁵ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 40 keV.

Next, the substrate is connected by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed - the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out at 200 ° C for 0.1 hours. The operations are carried out in a chamber with a vacuum of 10 ³ Pa.

The final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 950 ° C for 1 hour in an inert atmosphere of nitrogen.

The result is a structure free from dislocation and mismatch defects containing 0.6 μm Si and 0.4 μm SiO ₂ on a Si substrate.

Example 9

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer of silicon oxide 50 nm thick is grown on the working surface of the silicon donor substrate, through which implantation is carried out and which is removed after implantation.

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a thickness of silicon oxide of 350 nm. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 1 × 10 ¹⁵ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 30 keV.

Next, the substrate is connected by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed - the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. The connection and simultaneous splicing with delamination is carried out at a temperature of 450 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out at 200 ° C for 0.1 hours. The operations are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 1000 ° C, duration 0, 5 hours, in an inert atmosphere of nitrogen.

The result is a structure free of dislocation and mismatch defects containing 0.6 μm Si and 0.35 μm SiO ₂ on a Si substrate.

Example 10

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating a layer and a surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 .

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a thickness of silicon oxide of 400 nm. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 3 × 10 ¹⁵ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 40 keV.

Next, the substrate is connected by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed - the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 350 ° C for 1 hour, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out at 200 ° C for 0.1 hours. The operations are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 1000 ° C for 1 hour in an inert atmosphere of nitrogen.

The result is a structure free from dislocation and mismatch defects containing 0.65 μm Si and 0.4 μm SiO ₂ on a Si substrate.

Example 11

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer of silicon oxide 50 nm thick is grown on the working surface of the silicon donor substrate, through which implantation is carried out and which is removed after implantation.

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a thickness of silicon oxide of 400 nm. The implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 4 × 10 ¹⁵ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 20 keV.

Then, the substrate is joined by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed — the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 300 ° C for 25 hours, and the drying prior to the connection after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out at 80 ° C for 1 hour. The operations are carried out in a chamber with a vacuum of 10 ¹ Pa.

Final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 700 ° C for 3 hours in an inert atmosphere of nitrogen.

The result is a structure free from dislocation and mismatch defects containing 0.6 μm Si and 0.4 μm SiO ₂ on a Si substrate.

Example 12

When implementing a method of manufacturing a silicon-on-insulator structure, a substrate is taken with an amorphous insulating layer made on its surface, into which ions of an easily diffusing impurity are implanted, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and surface layer of silicon, with the formation of the localization region of the implanted impurity. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds. Then, a silicon donor substrate is connected to the amorphous insulating layer of the substrate and splicing is carried out, and a silicon surface layer of the required thickness is formed. At the end of manufacture, annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer.

A silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface.

To form a surface layer of silicon of the required thickness, before joining the silicon donor substrate with the amorphous insulating layer of the substrate, a softened region is created in the donor substrate at the required distance from the working surface, thereby highlighting the cut-off silicon surface layer of a given thickness to be transferred to the amorphous insulating layer the substrate. The softened zone in the donor substrate at the required distance from the working surface is created by the implantation of hydrogen ions H ₂ ⁺ with an energy value of 140 keV and a dose of 2.5 × 10 ¹⁶ cm ^-2 . Before hydrogen implantation, a protective layer of silicon oxide 50 nm thick is grown on the working surface of the silicon donor substrate, through which implantation is carried out and which is removed after implantation.

Ions of an easily diffusing impurity are implanted into the amorphous insulating layer, which removes irregular bonds and saturates the dangling bonds in the amorphous insulating layer and at the interface between the amorphous insulating layer and the silicon surface layer, with the formation of the localized region of the implanted impurity, namely, fluorine ions F ⁺ . An amorphous insulating layer is grown preliminarily on a substrate thermally, obtaining a thickness of silicon oxide of 400 nm. Implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at.% When using a dose of implanted ions of 1 × 10 ¹⁵ cm ^-2 .

The formation of the localized region of the implanted impurity is carried out in half of the amorphous insulating layer adjacent to the interface between the surface layer of silicon transferred from the donor substrate and at a distance from the interface that is less than the diffusion length of the implanted impurity during subsequent annealing. The indicated is realized due to the implantation conditions associated with the choice of the ion energy value, which ensures the corresponding formation of the distribution profile of impurity atoms with the specified localization in the amorphous insulating layer, 30 keV.

Next, the substrate is connected by an amorphous insulating layer with a silicon donor substrate and spliced, and a silicon surface layer of the required thickness is formed as follows. A donor substrate with a weakened zone created by implantation of hydrogen ions and a substrate with an amorphous insulating layer in which a region of localization of the implanted impurity is formed is subjected to processing that ensures their fusion. The treatment consists of cleaning and hydrophilizing the surfaces on which the splicing is performed - the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer. Then carry out washing with a stream of ultrapure deionized water, drying and removal of excess physically adsorbed substances from their surfaces. After that, the silicon donor substrate is connected to the substrate with an amorphous insulating layer by the parties in relation to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region of the donor substrate to form a cut-off silicon surface layer on the amorphous insulating layer of the substrate. In this case, the connection and simultaneous splicing with delamination are carried out at a temperature of 300 ° C for 100 hours, and the drying prior to the connection after washing with a jet of ultrapure deionized water and the removal of excess physically adsorbed substances from their surfaces is carried out at 300 ° C for 0.1 hours. The operations are carried out in a chamber with a vacuum of 10 ² Pa.

Final annealing is carried out under conditions that ensure diffusion of the embedded impurity with the removal of irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely, at an annealing temperature of 850 ° C for 3 hours in an inert atmosphere of nitrogen.

The result is a structure free from dislocation and mismatch defects containing 0.6 μm Si and 0.4 μm SiO ₂ on a Si substrate.

In conclusion, we note that the positive effect of using the proposed method for manufacturing a silicon-on-insulator structure with the implantation of ions of easily diffusing impurities, which can remove excess irregular bonds and saturate dangling bonds, into the insulating layer of one semiconductor wafer, hydrogen-induced transfer of the semiconductor layer Seeding from another semiconductor wafer and subsequent high-temperature annealing is:

1. Reducing the radiation load on the buried amorphous dielectric layer through the use of implantation of monoenergetic ions.

2. A decrease in the thermal load on the silicon-on-insulator structure due to a decrease in the concentration of defects generated during ion implantation in a reduced dose range of impurity ions.

3. High quality of the dielectric due to a decrease in the degree of disorder achieved by implantation of an impurity in the dielectric region adjacent to the interface of the silicon-on-insulator structure.

4. The high quality of the interface between the buried amorphous dielectric layer and the single crystal substrate, achieved by implanting ions into the dielectric region adjacent to the interface of the silicon-insulator structure.

5. The improved quality of the interface between the buried amorphous dielectric layer and the transferred semiconductor layer, achieved by removing spurious irregular bonds.

6. The improved quality of the buried amorphous layer, achieved by the removal of spurious irregular bonds.

7. Good compatibility of the proposed method with other technological methods used to create micro- and nanoelectronics devices based on silicon-on-insulator structures with increased resistance to ionizing radiation.

8. Reduction of technological operations, such as ion implantation, through the use of monoenergetic implantation, cheaper the process of creating a silicon-on-insulator structure.

These advantages are the result of the formation of additional bonds between the atoms of the implanted impurity and irregular or dangling bonds in the volume of the insulating layer and / or at the interface between the insulating layer and the single crystal semiconductor layer as a result of diffusion of the implanted atoms to these bonds during high-temperature exposure, improving the quality of the insulating layer and the quality of the interface between the insulating layer and the single-crystal semiconductor layer, without forming an additional insulating layer.

Claims (12)

1. A method of manufacturing a silicon-on-insulator structure, which consists in the fact that they take a substrate with an insulating layer made on its surface, into which ions are implanted, connect a silicon donor substrate to the insulating layer of the substrate and carry out splicing, annealing, form a surface a silicon layer of the required thickness, characterized in that the implantation is carried out in an amorphous insulating layer of ions of easily diffusing impurities, removing irregular bonds and saturating dangling bonds in an amorphous insulating layer th and / or at the interface between the amorphous insulating layer and the surface layer of silicon, with the formation of the localization region of the implanted impurity, under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, then the substrate is connected by an amorphous insulating layer with silicon with a donor substrate and splicing, form a surface layer of silicon of the required thickness; in the final, annealing is carried out under conditions providing diffusion impurity with the removal of irregular bonds and saturation of dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer. 2. The method according to claim 1, characterized in that a silicon oxide layer is grown in the composition of the silicon donor substrate. 3. The method according to claim 1, characterized in that a silicon substrate is used as a substrate, and a silicon oxide dielectric is used as an amorphous insulating layer on its surface. 4. The method according to claim 1, characterized in that to form a surface layer of silicon of the required thickness before joining the silicon donor substrate with the amorphous insulating layer of the substrate in the donor substrate, a softened region is created at the required distance from the working surface, thereby highlighting a surface layer of silicon of a given thickness to be transferred to the amorphous insulating layer of the substrate. 5. The method according to claim 4, characterized in that the softened zone in the donor substrate at the required distance from the working surface is created by implanting hydrogen ions with an energy value of 20 ÷ 200 keV and a dose of 2 · 10 ¹⁶ ÷ 1 · 10 ¹⁷ cm ^-2 . 6. The method according to claim 5, characterized in that before the implantation of hydrogen on the working surface of the silicon donor substrate, a protective layer of silicon oxide is grown through which the implantation is carried out and which is removed after implantation. 7. The method according to claim 1, characterized in that ions of an easily diffusing impurity are removed into the amorphous insulating layer, removing irregular bonds and saturating the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, with the formation of the localization region of the implanted impurity, namely fluorine ions. 8. The method according to claim 1, characterized in that the implantation is carried out under conditions that ensure the concentration of the introduced impurity, sufficient to eliminate the negative manifestations of irregular and dangling bonds, namely, the concentration of embedded ions is not less than 0.05 at.% And not more than 1 at .%. 9. The method according to claim 8, characterized in that the concentration of embedded impurity ions of not less than 0.05 at.% And not more than 1 at.% Is achieved when using doses of implanted ions of not less than 3 · 10 ¹⁴ cm ^-2 and less than 5 · 10 ¹⁵ cm ^-2 . 10. The method according to claim 1, characterized in that the region of localization of the implanted impurity is formed in half of the amorphous insulating layer adjacent to the interface of the silicon surface transferred from the donor substrate to a surface layer of silicon, at a distance from the interface of the joint, less than the diffusion length implanted impurities during subsequent annealing, the indicated is realized due to the conditions of implantation associated with the choice of the ion energy value, which ensures the corresponding formation of pro For the distribution of impurity atoms with the indicated localization in the amorphous insulating layer, from 20 to 50 keV. 11. The method according to claim 1, characterized in that the substrate is connected by an amorphous insulating layer with a silicon donor substrate and spliced, a silicon surface layer of the required thickness is formed as follows: a donor substrate with a weakened zone created by implanting hydrogen ions and a substrate with an amorphous insulating layer, in which a region of localization of the implanted impurity is formed, is subjected to processing that ensures their splicing, to cleaning and hydrophilization of the surfaces on which the spliced is produced the working surface of the donor substrate, from which hydrogen ions are implanted, and the surface of the amorphous insulating layer, after which the silicon donor substrate is connected to the substrate with the amorphous insulating layer by the sides with respect to which the above procedures are performed, simultaneously spliced and delaminated over the weakened region donor substrate with the formation on the amorphous insulating layer of the substrate of the cut-off surface layer of silicon, while the connection and simultaneous splicing with delamination, as well as e and preceding the connection, drying after washing with a jet of ultrapure deionized water and removal of excess physically adsorbed substances from their surfaces is carried out with temperature varying from 80 to 450 ° C, duration of procedures from 0.1 to 100 hours in a chamber with vacuum 10 ¹ ÷ 10 ³ Pa or in combination with an inert dry atmosphere. 12. The method according to claim 1, characterized in that the annealing is carried out under conditions ensuring the diffusion of the embedded impurity to remove irregular bonds and saturation of the dangling bonds in the amorphous insulating layer and / or at the interface between the amorphous insulating layer and the surface silicon layer, namely at an annealing temperature of 700 ÷ 1100 ° C, a duration of at least 0.5 hours, as well as the presence of an inert atmosphere.

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