RU2397953C2 - Способ производства гранулированного поликристаллического кремния в реакторе с псевдоожиженным слоем - Google Patents
Способ производства гранулированного поликристаллического кремния в реакторе с псевдоожиженным слоем Download PDFInfo
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- RU2397953C2 RU2397953C2 RU2008136843/15A RU2008136843A RU2397953C2 RU 2397953 C2 RU2397953 C2 RU 2397953C2 RU 2008136843/15 A RU2008136843/15 A RU 2008136843/15A RU 2008136843 A RU2008136843 A RU 2008136843A RU 2397953 C2 RU2397953 C2 RU 2397953C2
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- pressure
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- gas
- silicon
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims description 32
- 239000007789 gas Substances 0.000 claims abstract description 175
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 111
- 238000006243 chemical reaction Methods 0.000 claims abstract description 107
- 239000002245 particle Substances 0.000 claims abstract description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000012495 reaction gas Substances 0.000 claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000000203 mixture Substances 0.000 claims abstract description 19
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000005049 silicon tetrachloride Substances 0.000 claims abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 6
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 5
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000011261 inert gas Substances 0.000 claims description 82
- 230000001105 regulatory effect Effects 0.000 claims description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000001307 helium Substances 0.000 claims description 11
- 229910052734 helium Inorganic materials 0.000 claims description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 238000004868 gas analysis Methods 0.000 claims description 10
- 238000004458 analytical method Methods 0.000 claims description 8
- 238000012856 packing Methods 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 5
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 abstract description 34
- 239000000126 substance Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000002912 waste gas Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 44
- 239000013078 crystal Substances 0.000 description 28
- 238000010438 heat treatment Methods 0.000 description 28
- 239000000047 product Substances 0.000 description 27
- 238000000151 deposition Methods 0.000 description 21
- 239000012535 impurity Substances 0.000 description 21
- 230000008021 deposition Effects 0.000 description 20
- 230000006870 function Effects 0.000 description 19
- 230000001276 controlling effect Effects 0.000 description 17
- 238000009826 distribution Methods 0.000 description 17
- 238000007789 sealing Methods 0.000 description 15
- 230000008859 change Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 238000000926 separation method Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000009434 installation Methods 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 8
- 239000010453 quartz Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005243 fluidization Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- 238000009530 blood pressure measurement Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910021397 glassy carbon Inorganic materials 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 230000004941 influx Effects 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000013523 data management Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000003546 flue gas Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- -1 silicon carbide) Chemical compound 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01M—CATCHING, TRAPPING OR SCARING OF ANIMALS; APPARATUS FOR THE DESTRUCTION OF NOXIOUS ANIMALS OR NOXIOUS PLANTS
- A01M1/00—Stationary means for catching or killing insects
- A01M1/14—Catching by adhesive surfaces
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01M—CATCHING, TRAPPING OR SCARING OF ANIMALS; APPARATUS FOR THE DESTRUCTION OF NOXIOUS ANIMALS OR NOXIOUS PLANTS
- A01M1/00—Stationary means for catching or killing insects
- A01M1/02—Stationary means for catching or killing insects with devices or substances, e.g. food, pheronones attracting the insects
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01M—CATCHING, TRAPPING OR SCARING OF ANIMALS; APPARATUS FOR THE DESTRUCTION OF NOXIOUS ANIMALS OR NOXIOUS PLANTS
- A01M2200/00—Kind of animal
- A01M2200/01—Insects
- A01M2200/012—Flying insects
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pest Control & Pesticides (AREA)
- Inorganic Chemistry (AREA)
- Insects & Arthropods (AREA)
- Environmental Sciences (AREA)
- Zoology (AREA)
- Wood Science & Technology (AREA)
- Engineering & Computer Science (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060013973A KR100661284B1 (ko) | 2006-02-14 | 2006-02-14 | 유동층 반응기를 이용한 다결정실리콘 제조 방법 |
| KR10-2006-0013973 | 2006-02-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2008136843A RU2008136843A (ru) | 2010-03-20 |
| RU2397953C2 true RU2397953C2 (ru) | 2010-08-27 |
Family
ID=37815541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2008136843/15A RU2397953C2 (ru) | 2006-02-14 | 2007-02-14 | Способ производства гранулированного поликристаллического кремния в реакторе с псевдоожиженным слоем |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7771687B2 (enExample) |
| EP (1) | EP1986956B1 (enExample) |
| JP (1) | JP4910003B2 (enExample) |
| KR (1) | KR100661284B1 (enExample) |
| CN (1) | CN101384510B (enExample) |
| ES (1) | ES2429568T3 (enExample) |
| RU (1) | RU2397953C2 (enExample) |
| WO (1) | WO2007094607A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2490576C2 (ru) * | 2010-10-01 | 2013-08-20 | Силикон Вэлью Ллс. | Реактор кипящего слоя |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100756310B1 (ko) * | 2006-02-07 | 2007-09-07 | 한국화학연구원 | 입자형 다결정실리콘 제조용 고압 유동층반응기 |
| KR100783667B1 (ko) * | 2006-08-10 | 2007-12-07 | 한국화학연구원 | 입자형 다결정 실리콘의 제조방법 및 제조장치 |
| DE102007021003A1 (de) | 2007-05-04 | 2008-11-06 | Wacker Chemie Ag | Verfahren zur kontinuierlichen Herstellung von polykristallinem hochreinen Siliciumgranulat |
| SG192438A1 (en) * | 2008-06-30 | 2013-08-30 | Memc Electronic Materials | Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls |
| CN101676203B (zh) * | 2008-09-16 | 2015-06-10 | 储晞 | 生产高纯颗粒硅的方法 |
| DE102009043947B4 (de) * | 2009-09-04 | 2011-07-07 | G+R Technology Group AG, 93128 | Anlage zur Herstellung von polykristallinem Silizium mit Vorrichtung zum Ausleiten gasförmiger Messproben |
| MY161193A (en) | 2009-11-18 | 2017-04-14 | Rec Silicon Inc | Fluid bed reactor |
| KR20120110109A (ko) * | 2009-12-29 | 2012-10-09 | 엠이엠씨 일렉트로닉 머티리얼즈, 인크. | 주변 실리콘 테트라염화물을 이용하여 반응기 벽 상의 실리콘의 퇴적을 감소시키는 방법 |
| JP2011219286A (ja) * | 2010-04-06 | 2011-11-04 | Koji Tomita | シリコン及び炭化珪素の製造方法及び製造装置 |
| US20120100061A1 (en) | 2010-10-22 | 2012-04-26 | Memc Electronic Materials, Inc. | Production of Polycrystalline Silicon in Substantially Closed-loop Processes |
| US8449848B2 (en) | 2010-10-22 | 2013-05-28 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon in substantially closed-loop systems |
| US9156705B2 (en) | 2010-12-23 | 2015-10-13 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor |
| US8452547B2 (en) | 2010-12-29 | 2013-05-28 | Memc Electronic Materials, Inc. | Systems and methods for particle size determination and control in a fluidized bed reactor |
| US8849584B2 (en) | 2010-12-29 | 2014-09-30 | Sunedison, Inc. | Systems and methods for particle size determination and control in a fluidized bed reactor for use with thermally decomposable silicon-containing gas |
| KR101329032B1 (ko) * | 2011-04-20 | 2013-11-14 | 주식회사 실리콘밸류 | 다결정 실리콘 제조장치 및 이를 이용한 다결정 실리콘의 제조방법 |
| TW201304864A (zh) * | 2011-06-10 | 2013-02-01 | Rec Silicon Inc | 高純度矽塗佈顆粒之製造 |
| US9114997B2 (en) | 2011-09-30 | 2015-08-25 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| KR102050114B1 (ko) * | 2011-09-30 | 2019-11-28 | 코너 스타 리미티드 | 유동층 반응기에서의 실란의 열 분해에 의한 다결정 실리콘의 제조 |
| US9587993B2 (en) | 2012-11-06 | 2017-03-07 | Rec Silicon Inc | Probe assembly for a fluid bed reactor |
| US9212421B2 (en) | 2013-07-10 | 2015-12-15 | Rec Silicon Inc | Method and apparatus to reduce contamination of particles in a fluidized bed reactor |
| KR101450532B1 (ko) | 2013-01-15 | 2014-10-14 | 주식회사 실리콘밸류 | 다결정 실리콘 제조장치 |
| CN103172381B (zh) * | 2013-04-08 | 2014-03-26 | 无锡中彩科技有限公司 | 冷壁流化床的制备方法及其应用 |
| CN103523786A (zh) | 2013-04-16 | 2014-01-22 | 江苏中能硅业科技发展有限公司 | 流化床反应器及其用于制备高纯粒状多晶硅的方法 |
| CN103449442B (zh) * | 2013-09-03 | 2015-03-18 | 浙江精功新材料技术有限公司 | 一种流化床多晶硅颗粒的制备系统及利用该系统制备多晶硅的工艺 |
| US9585199B2 (en) * | 2013-10-30 | 2017-02-28 | Atomic Energy Council—Institute of Nuclear Energy Research | Hybrid heating apparatus applicable to the moving granular bed filter |
| CN103673607B (zh) * | 2013-12-04 | 2015-12-09 | 中国科学院过程工程研究所 | 一种可视化加热炉 |
| JP6256073B2 (ja) * | 2014-02-12 | 2018-01-10 | 日立化成株式会社 | 反応管及び触媒担持方法 |
| US9446367B2 (en) | 2014-08-15 | 2016-09-20 | Rec Silicon Inc | Joint design for segmented silicon carbide liner in a fluidized bed reactor |
| US9238211B1 (en) | 2014-08-15 | 2016-01-19 | Rec Silicon Inc | Segmented silicon carbide liner |
| US9662628B2 (en) | 2014-08-15 | 2017-05-30 | Rec Silicon Inc | Non-contaminating bonding material for segmented silicon carbide liner in a fluidized bed reactor |
| DE102015224099A1 (de) * | 2015-12-02 | 2017-06-08 | Wacker Chemie Ag | Wirbelschichtreaktor und Verfahren zur Herstellung von polykristallinem Siliciumgranulat |
| WO2017100564A1 (en) * | 2015-12-11 | 2017-06-15 | Sunedison, Inc. | Reactor systems having multiple pressure balancers |
| WO2017100404A1 (en) * | 2015-12-11 | 2017-06-15 | Sunedison, Inc. | Reactor systems having external pressure balancer |
| KR101987129B1 (ko) * | 2016-09-19 | 2019-06-10 | 한화케미칼 주식회사 | 3염화 실란 합성용 유동층 반응기 |
| US11117112B2 (en) * | 2019-03-28 | 2021-09-14 | Rec Silicon Inc | Pressure-based control of fluidized bed reactor |
| EP3878546A1 (de) | 2020-03-13 | 2021-09-15 | Linde GmbH | Reaktor und verfahren zur durchführung einer chemischen reaktion |
| EP3900817A1 (de) | 2020-04-23 | 2021-10-27 | Linde GmbH | Reaktor und verfahren zur durchführung einer chemischen reaktion |
| EP3900818A1 (de) | 2020-04-23 | 2021-10-27 | Linde GmbH | Reaktor und verfahren zur durchführung einer chemischen reaktion |
| CN114225849A (zh) * | 2021-12-06 | 2022-03-25 | 亚洲硅业(青海)股份有限公司 | 一种硅颗粒生产装置及方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU990071A3 (ru) * | 1977-02-07 | 1983-01-15 | Вакер-Хеми Гмбх (Фирма) | Реактор с псевдоожиженным слоем |
| US5165908A (en) * | 1988-03-31 | 1992-11-24 | Advanced Silicon Materials, Inc. | Annular heated fluidized bed reactor |
| US5382412A (en) * | 1992-10-16 | 1995-01-17 | Korea Research Institute Of Chemical Technology | Fluidized bed reactor heated by microwaves |
| JP2001146412A (ja) * | 1999-10-06 | 2001-05-29 | Wacker Chemie Gmbh | 流動床反応器及び高純度の多結晶シリコンの製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2356487A1 (de) * | 1973-11-12 | 1975-05-22 | Rheinstahl Ag | Lanze fuer einen wirbelschichtofen |
| US4737348A (en) * | 1982-06-22 | 1988-04-12 | Harry Levin | Apparatus for making molten silicon |
| KR880000618B1 (ko) * | 1985-12-28 | 1988-04-18 | 재단법인 한국화학연구소 | 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조 방법 |
| DE3839705A1 (de) * | 1987-11-25 | 1989-06-08 | Union Carbide Corp | Beheizter wirbelschichtreaktor |
| CA1332782C (en) * | 1988-03-31 | 1994-11-01 | Richard Andrew Van Slooten | Annular heated fluidized bed reactor |
| JPH0694367B2 (ja) * | 1990-01-19 | 1994-11-24 | 大阪チタニウム製造株式会社 | 多結晶シリコンの製造方法 |
| JPH0692617A (ja) * | 1992-09-07 | 1994-04-05 | Toagosei Chem Ind Co Ltd | 種シリコン粒子の製造方法及び顆粒状多結晶シリコンの製造方法 |
| JPH06127918A (ja) * | 1992-10-15 | 1994-05-10 | Tonen Chem Corp | 多結晶シリコンの製造方法 |
| KR960014593B1 (ko) * | 1994-04-19 | 1996-10-16 | 재단법인 한국화학연구소 | 초단파에 의한 유동층 가열 방법에 의한 고순도 입상 다결정 실리콘의 제조 방법 |
| DE69625688T2 (de) | 1995-06-07 | 2003-10-23 | Advanced Silicon Materials Llc, Moses Lake | Verfahren und vorrichtung zur abscheidung von silizium in einem wirbelschichtreaktor |
| US5810934A (en) * | 1995-06-07 | 1998-09-22 | Advanced Silicon Materials, Inc. | Silicon deposition reactor apparatus |
| JP3215310B2 (ja) * | 1995-12-18 | 2001-10-02 | 海洋建設株式会社 | 貝殻充填人工魚礁 |
| KR100411180B1 (ko) * | 2001-01-03 | 2003-12-18 | 한국화학연구원 | 다결정실리콘의 제조방법과 그 장치 |
| WO2005080272A1 (ja) * | 2004-02-23 | 2005-09-01 | Toho Titanium Co., Ltd. | 金属塩化物の製造装置 |
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2006
- 2006-02-14 KR KR1020060013973A patent/KR100661284B1/ko not_active Expired - Fee Related
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2007
- 2007-02-14 RU RU2008136843/15A patent/RU2397953C2/ru not_active IP Right Cessation
- 2007-02-14 CN CN2007800054832A patent/CN101384510B/zh not_active Expired - Fee Related
- 2007-02-14 US US12/160,145 patent/US7771687B2/en not_active Expired - Fee Related
- 2007-02-14 WO PCT/KR2007/000781 patent/WO2007094607A1/en not_active Ceased
- 2007-02-14 EP EP07708931.6A patent/EP1986956B1/en not_active Not-in-force
- 2007-02-14 ES ES07708931T patent/ES2429568T3/es active Active
- 2007-02-14 JP JP2008555148A patent/JP4910003B2/ja not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU990071A3 (ru) * | 1977-02-07 | 1983-01-15 | Вакер-Хеми Гмбх (Фирма) | Реактор с псевдоожиженным слоем |
| US5165908A (en) * | 1988-03-31 | 1992-11-24 | Advanced Silicon Materials, Inc. | Annular heated fluidized bed reactor |
| US5382412A (en) * | 1992-10-16 | 1995-01-17 | Korea Research Institute Of Chemical Technology | Fluidized bed reactor heated by microwaves |
| JP2001146412A (ja) * | 1999-10-06 | 2001-05-29 | Wacker Chemie Gmbh | 流動床反応器及び高純度の多結晶シリコンの製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2490576C2 (ru) * | 2010-10-01 | 2013-08-20 | Силикон Вэлью Ллс. | Реактор кипящего слоя |
Also Published As
| Publication number | Publication date |
|---|---|
| RU2008136843A (ru) | 2010-03-20 |
| CN101384510B (zh) | 2012-08-29 |
| ES2429568T3 (es) | 2013-11-15 |
| JP4910003B2 (ja) | 2012-04-04 |
| US20090004090A1 (en) | 2009-01-01 |
| WO2007094607A8 (en) | 2008-07-24 |
| CN101384510A (zh) | 2009-03-11 |
| US7771687B2 (en) | 2010-08-10 |
| EP1986956B1 (en) | 2013-08-14 |
| WO2007094607A1 (en) | 2007-08-23 |
| EP1986956A4 (en) | 2012-10-10 |
| JP2009526734A (ja) | 2009-07-23 |
| EP1986956A1 (en) | 2008-11-05 |
| KR100661284B1 (ko) | 2006-12-27 |
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