RU2016134923A3 - - Google Patents
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- Publication number
- RU2016134923A3 RU2016134923A3 RU2016134923A RU2016134923A RU2016134923A3 RU 2016134923 A3 RU2016134923 A3 RU 2016134923A3 RU 2016134923 A RU2016134923 A RU 2016134923A RU 2016134923 A RU2016134923 A RU 2016134923A RU 2016134923 A3 RU2016134923 A3 RU 2016134923A3
- Authority
- RU
- Russia
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/04—Nickel compounds
- C07F15/045—Nickel compounds without a metal-carbon linkage
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
- C07F15/065—Cobalt compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/003—Compounds containing elements of Groups 2 or 12 of the Periodic Table without C-Metal linkages
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Dispersion Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14152683 | 2014-01-27 | ||
EP14152683.0 | 2014-01-27 | ||
PCT/EP2015/051181 WO2015110492A1 (en) | 2014-01-27 | 2015-01-22 | Process for the generation of thin inorganic films |
Publications (2)
Publication Number | Publication Date |
---|---|
RU2016134923A RU2016134923A (ru) | 2018-03-05 |
RU2016134923A3 true RU2016134923A3 (ru) | 2018-10-23 |
Family
ID=49998177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2016134923A RU2016134923A (ru) | 2014-01-27 | 2015-01-22 | Способ образования тонких неорганических пленок |
Country Status (9)
Country | Link |
---|---|
US (1) | US20160348243A1 (ru) |
EP (1) | EP3099837A1 (ru) |
JP (1) | JP2017505858A (ru) |
KR (1) | KR20160113667A (ru) |
CN (1) | CN107075678A (ru) |
IL (1) | IL246810A0 (ru) |
RU (1) | RU2016134923A (ru) |
SG (1) | SG11201606042SA (ru) |
WO (1) | WO2015110492A1 (ru) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MX2017009473A (es) | 2015-01-20 | 2017-11-02 | Basf Coatings Gmbh | Proceso para la produccion de laminados flexibles organicos-inorganicos. |
WO2016173884A1 (de) | 2015-04-29 | 2016-11-03 | Basf Se | Stabilisierung von natriumdithionit mit diversen additiven |
EP3408273B1 (en) | 2016-01-27 | 2020-06-17 | Basf Se | Process for the generation of thin inorganic films |
US20190248821A1 (en) * | 2016-07-18 | 2019-08-15 | Basf Se | Process for the generation of thin inorganic films |
EP3957769A1 (en) * | 2017-12-20 | 2022-02-23 | Basf Se | Process for the generation of metal-containing films |
US11377454B2 (en) * | 2018-04-17 | 2022-07-05 | Basf Se | Aluminum precursor and process for the generation of metal-containing films |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001261638A (ja) * | 2000-03-14 | 2001-09-26 | Mitsubishi Chemicals Corp | 2,5−ジイミノメチルピロール骨格を有する配位子を有する新規金属錯体化合物及びこれを含むα−オレフィン重合用触媒 |
US8632853B2 (en) * | 2010-10-29 | 2014-01-21 | Applied Materials, Inc. | Use of nitrogen-containing ligands in atomic layer deposition methods |
US8691985B2 (en) * | 2011-07-22 | 2014-04-08 | American Air Liquide, Inc. | Heteroleptic pyrrolecarbaldimine precursors |
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2015
- 2015-01-22 WO PCT/EP2015/051181 patent/WO2015110492A1/en active Application Filing
- 2015-01-22 US US15/114,666 patent/US20160348243A1/en not_active Abandoned
- 2015-01-22 JP JP2016548706A patent/JP2017505858A/ja not_active Withdrawn
- 2015-01-22 KR KR1020167023277A patent/KR20160113667A/ko not_active Application Discontinuation
- 2015-01-22 SG SG11201606042SA patent/SG11201606042SA/en unknown
- 2015-01-22 CN CN201580006067.9A patent/CN107075678A/zh active Pending
- 2015-01-22 RU RU2016134923A patent/RU2016134923A/ru not_active Application Discontinuation
- 2015-01-22 EP EP15701181.8A patent/EP3099837A1/en not_active Withdrawn
-
2016
- 2016-07-18 IL IL246810A patent/IL246810A0/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN107075678A (zh) | 2017-08-18 |
IL246810A0 (en) | 2016-08-31 |
US20160348243A1 (en) | 2016-12-01 |
RU2016134923A (ru) | 2018-03-05 |
KR20160113667A (ko) | 2016-09-30 |
EP3099837A1 (en) | 2016-12-07 |
WO2015110492A1 (en) | 2015-07-30 |
SG11201606042SA (en) | 2016-08-30 |
JP2017505858A (ja) | 2017-02-23 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FA92 | Acknowledgement of application withdrawn (lack of supplementary materials submitted) |
Effective date: 20190212 |