RU2016134923A3 - - Google Patents

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Publication number
RU2016134923A3
RU2016134923A3 RU2016134923A RU2016134923A RU2016134923A3 RU 2016134923 A3 RU2016134923 A3 RU 2016134923A3 RU 2016134923 A RU2016134923 A RU 2016134923A RU 2016134923 A RU2016134923 A RU 2016134923A RU 2016134923 A3 RU2016134923 A3 RU 2016134923A3
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RU
Russia
Application number
RU2016134923A
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RU2016134923A (ru
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of RU2016134923A publication Critical patent/RU2016134923A/ru
Publication of RU2016134923A3 publication Critical patent/RU2016134923A3/ru

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45553Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04Nickel compounds
    • C07F15/045Nickel compounds without a metal-carbon linkage
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06Cobalt compounds
    • C07F15/065Cobalt compounds without a metal-carbon linkage
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/003Compounds containing elements of Groups 2 or 12 of the Periodic Table without C-Metal linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Dispersion Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
RU2016134923A 2014-01-27 2015-01-22 Способ образования тонких неорганических пленок RU2016134923A (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14152683 2014-01-27
EP14152683.0 2014-01-27
PCT/EP2015/051181 WO2015110492A1 (en) 2014-01-27 2015-01-22 Process for the generation of thin inorganic films

Publications (2)

Publication Number Publication Date
RU2016134923A RU2016134923A (ru) 2018-03-05
RU2016134923A3 true RU2016134923A3 (ru) 2018-10-23

Family

ID=49998177

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2016134923A RU2016134923A (ru) 2014-01-27 2015-01-22 Способ образования тонких неорганических пленок

Country Status (9)

Country Link
US (1) US20160348243A1 (ru)
EP (1) EP3099837A1 (ru)
JP (1) JP2017505858A (ru)
KR (1) KR20160113667A (ru)
CN (1) CN107075678A (ru)
IL (1) IL246810A0 (ru)
RU (1) RU2016134923A (ru)
SG (1) SG11201606042SA (ru)
WO (1) WO2015110492A1 (ru)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2017009473A (es) 2015-01-20 2017-11-02 Basf Coatings Gmbh Proceso para la produccion de laminados flexibles organicos-inorganicos.
WO2016173884A1 (de) 2015-04-29 2016-11-03 Basf Se Stabilisierung von natriumdithionit mit diversen additiven
EP3408273B1 (en) 2016-01-27 2020-06-17 Basf Se Process for the generation of thin inorganic films
US20190248821A1 (en) * 2016-07-18 2019-08-15 Basf Se Process for the generation of thin inorganic films
EP3957769A1 (en) * 2017-12-20 2022-02-23 Basf Se Process for the generation of metal-containing films
US11377454B2 (en) * 2018-04-17 2022-07-05 Basf Se Aluminum precursor and process for the generation of metal-containing films

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001261638A (ja) * 2000-03-14 2001-09-26 Mitsubishi Chemicals Corp 2,5−ジイミノメチルピロール骨格を有する配位子を有する新規金属錯体化合物及びこれを含むα−オレフィン重合用触媒
US8632853B2 (en) * 2010-10-29 2014-01-21 Applied Materials, Inc. Use of nitrogen-containing ligands in atomic layer deposition methods
US8691985B2 (en) * 2011-07-22 2014-04-08 American Air Liquide, Inc. Heteroleptic pyrrolecarbaldimine precursors

Also Published As

Publication number Publication date
CN107075678A (zh) 2017-08-18
IL246810A0 (en) 2016-08-31
US20160348243A1 (en) 2016-12-01
RU2016134923A (ru) 2018-03-05
KR20160113667A (ko) 2016-09-30
EP3099837A1 (en) 2016-12-07
WO2015110492A1 (en) 2015-07-30
SG11201606042SA (en) 2016-08-30
JP2017505858A (ja) 2017-02-23

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Legal Events

Date Code Title Description
FA92 Acknowledgement of application withdrawn (lack of supplementary materials submitted)

Effective date: 20190212