SG11201606042SA - Process for the generation of thin inorganic films - Google Patents

Process for the generation of thin inorganic films

Info

Publication number
SG11201606042SA
SG11201606042SA SG11201606042SA SG11201606042SA SG11201606042SA SG 11201606042S A SG11201606042S A SG 11201606042SA SG 11201606042S A SG11201606042S A SG 11201606042SA SG 11201606042S A SG11201606042S A SG 11201606042SA SG 11201606042S A SG11201606042S A SG 11201606042SA
Authority
SG
Singapore
Prior art keywords
generation
inorganic films
thin inorganic
thin
films
Prior art date
Application number
SG11201606042SA
Inventor
Ke Xu
Christian Schildknecht
Jan Spielmann
Jürgen FRANK
Florian Blasberg
Martin Gärtner
Daniel Löffler
Sabine Weiguny
Kerstin Schierle-Arndt
Katharina Federsel
Falko Abels
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of SG11201606042SA publication Critical patent/SG11201606042SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • C07F15/045—Nickel compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C07F15/065—Cobalt compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/003—Compounds containing elements of Groups 2 or 12 of the Periodic Table without C-Metal linkages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Formation Of Insulating Films (AREA)
  • Dispersion Chemistry (AREA)
SG11201606042SA 2014-01-27 2015-01-22 Process for the generation of thin inorganic films SG11201606042SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14152683 2014-01-27
PCT/EP2015/051181 WO2015110492A1 (en) 2014-01-27 2015-01-22 Process for the generation of thin inorganic films

Publications (1)

Publication Number Publication Date
SG11201606042SA true SG11201606042SA (en) 2016-08-30

Family

ID=49998177

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606042SA SG11201606042SA (en) 2014-01-27 2015-01-22 Process for the generation of thin inorganic films

Country Status (9)

Country Link
US (1) US20160348243A1 (en)
EP (1) EP3099837A1 (en)
JP (1) JP2017505858A (en)
KR (1) KR20160113667A (en)
CN (1) CN107075678A (en)
IL (1) IL246810A0 (en)
RU (1) RU2016134923A (en)
SG (1) SG11201606042SA (en)
WO (1) WO2015110492A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201705023SA (en) 2015-01-20 2017-07-28 Basf Coatings Gmbh Process for producing flexible organic-inorganic laminates
CN107531482B (en) 2015-04-29 2021-11-16 巴斯夫欧洲公司 Stabilization of sodium dithionite with the aid of various additives
WO2017129440A1 (en) 2016-01-27 2017-08-03 Basf Se Process for the generation of thin inorganic films
US20190248821A1 (en) * 2016-07-18 2019-08-15 Basf Se Process for the generation of thin inorganic films
EP3728688B1 (en) * 2017-12-20 2021-11-10 Basf Se Process for the generation of metal-containing films
CN111954674B (en) * 2018-04-17 2023-09-29 巴斯夫欧洲公司 Aluminum precursors and methods of forming metal-containing films

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001261638A (en) * 2000-03-14 2001-09-26 Mitsubishi Chemicals Corp New metal complex compound having ligand having 2, 5- diiminomethylpyrrole skeleton and catalyst which contain the complex compound and is used for polymerizing alpha-olefin
US8632853B2 (en) * 2010-10-29 2014-01-21 Applied Materials, Inc. Use of nitrogen-containing ligands in atomic layer deposition methods
US8691985B2 (en) * 2011-07-22 2014-04-08 American Air Liquide, Inc. Heteroleptic pyrrolecarbaldimine precursors

Also Published As

Publication number Publication date
KR20160113667A (en) 2016-09-30
EP3099837A1 (en) 2016-12-07
WO2015110492A1 (en) 2015-07-30
JP2017505858A (en) 2017-02-23
RU2016134923A (en) 2018-03-05
US20160348243A1 (en) 2016-12-01
CN107075678A (en) 2017-08-18
RU2016134923A3 (en) 2018-10-23
IL246810A0 (en) 2016-08-31

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