RU2014128555A - Детектор излучения - Google Patents
Детектор излучения Download PDFInfo
- Publication number
- RU2014128555A RU2014128555A RU2014128555A RU2014128555A RU2014128555A RU 2014128555 A RU2014128555 A RU 2014128555A RU 2014128555 A RU2014128555 A RU 2014128555A RU 2014128555 A RU2014128555 A RU 2014128555A RU 2014128555 A RU2014128555 A RU 2014128555A
- Authority
- RU
- Russia
- Prior art keywords
- segments
- cathode
- anode
- radiation detector
- detector according
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims abstract 29
- 239000004065 semiconductor Substances 0.000 claims abstract 19
- 239000000463 material Substances 0.000 claims 7
- 238000001514 detection method Methods 0.000 claims 4
- 230000000737 periodic effect Effects 0.000 claims 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 1
- 229910004613 CdTe Inorganic materials 0.000 claims 1
- 229910004611 CdZnTe Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910004262 HgTe Inorganic materials 0.000 claims 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1892—Direct radiation image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161569833P | 2011-12-13 | 2011-12-13 | |
| US61/569,833 | 2011-12-13 | ||
| PCT/IB2012/057212 WO2013088352A2 (en) | 2011-12-13 | 2012-12-12 | Radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| RU2014128555A true RU2014128555A (ru) | 2016-02-10 |
Family
ID=47624380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2014128555A RU2014128555A (ru) | 2011-12-13 | 2012-12-12 | Детектор излучения |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20140319363A1 (OSRAM) |
| EP (1) | EP2748639B1 (OSRAM) |
| JP (1) | JP6235480B2 (OSRAM) |
| CN (1) | CN104024889A (OSRAM) |
| BR (1) | BR112014014064A2 (OSRAM) |
| IN (1) | IN2014CN04758A (OSRAM) |
| RU (1) | RU2014128555A (OSRAM) |
| WO (1) | WO2013088352A2 (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11313981B2 (en) | 2017-02-28 | 2022-04-26 | The University Of Sussex | X-ray and γ-ray photodiode |
| RU2797929C2 (ru) * | 2017-02-28 | 2023-06-13 | Дзе Юниверсити Оф Сассекс | Рентгеновский и гамма-лучевой фотодиод |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6186205B2 (ja) * | 2013-08-15 | 2017-08-23 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子および撮像装置 |
| EP2876465A1 (en) * | 2013-11-26 | 2015-05-27 | Danmarks Tekniske Universitet (DTU) | X-ray and gamma-ray radiation detector |
| AT515501B1 (de) * | 2014-02-18 | 2016-01-15 | Griesmayer Erich Dr | Verfahren und Vorrichtung zum Erfassen und zum Unterscheiden von Elementarteilchen |
| DE102014207324A1 (de) * | 2014-04-16 | 2015-10-22 | Siemens Aktiengesellschaft | Direktkonvertierender Röntgenstrahlungsdetektor und CT-System |
| WO2016087423A1 (en) * | 2014-12-05 | 2016-06-09 | Koninklijke Philips N.V. | X-ray detector device for inclined angle x-ray radiation |
| EP3234649A1 (en) * | 2014-12-17 | 2017-10-25 | Koninklijke Philips N.V. | Detector and method for detecting ionizing radiation |
| JP2018505565A (ja) * | 2014-12-19 | 2018-02-22 | ジーレイ スイッツァーランド エスアー | モノリシックｃｍｏｓ集積ピクセル検出器ならびに様々な用途を含む粒子検出および撮像のためのシステムおよび方法 |
| US9482764B1 (en) * | 2015-05-28 | 2016-11-01 | General Electric Company | Systems and methods for charge-sharing identification and correction using a single pixel |
| JP6808317B2 (ja) * | 2015-12-04 | 2021-01-06 | キヤノン株式会社 | 撮像装置、および、撮像システム |
| JP6808316B2 (ja) * | 2015-12-04 | 2021-01-06 | キヤノン株式会社 | 撮像装置、および、撮像システム |
| CN105540526B (zh) * | 2015-12-29 | 2017-03-15 | 中国科学院电子学研究所 | 单片复合敏感电极的制造方法、基于其的敏感器件 |
| WO2017163149A1 (en) * | 2016-03-23 | 2017-09-28 | Koninklijke Philips N.V. | Nano-material imaging detector with an integral pixel border |
| CN105974460B (zh) * | 2016-05-11 | 2018-12-07 | 天津大学 | 可重构型x射线能谱探测方法及探测器像素单元结构 |
| CN106324649B (zh) | 2016-08-31 | 2023-09-15 | 同方威视技术股份有限公司 | 半导体探测器 |
| EP3306353A1 (en) * | 2016-10-07 | 2018-04-11 | Danmarks Tekniske Universitet | Radiation detector |
| EP3422051A1 (en) * | 2017-06-28 | 2019-01-02 | Koninklijke Philips N.V. | Direct conversion radiation detection |
| CN110914713B (zh) | 2017-07-26 | 2023-07-18 | 深圳帧观德芯科技有限公司 | 能够管理周边电荷共享的x射线检测器 |
| EP3658959A4 (en) * | 2017-07-26 | 2020-12-23 | Shenzhen Xpectvision Technology Co., Ltd. | RADIATION DETECTOR WITH INTEGRATED DEPOLARIZATION DEVICE |
| CN108267777B (zh) * | 2018-02-26 | 2023-07-07 | 张岚 | 面阵列像素探测器及中低能射线源的定向方法 |
| CN114902081A (zh) * | 2020-02-26 | 2022-08-12 | 深圳帧观德芯科技有限公司 | 辐射检测器 |
| US11835666B1 (en) * | 2020-07-31 | 2023-12-05 | Redlen Technologies, Inc. | Photon counting computed tomography detector with improved count rate stability and method of operating same |
| US11953452B2 (en) * | 2021-03-01 | 2024-04-09 | Redlen Technologies, Inc. | Ionizing radiation detector with reduced street width and improved count rate stability |
| JP2023055071A (ja) * | 2021-10-05 | 2023-04-17 | キヤノンメディカルシステムズ株式会社 | 検出器モジュール、ｘ線コンピュータ断層撮影装置及びｘ線検出装置 |
| CN120358815B (zh) * | 2025-06-19 | 2025-10-03 | 湘潭大学 | 一种带有肖特基漂浮电极的小像素阵列探测器 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046454A (en) | 1995-10-13 | 2000-04-04 | Digirad Corporation | Semiconductor radiation detector with enhanced charge collection |
| US5677539A (en) * | 1995-10-13 | 1997-10-14 | Digirad | Semiconductor radiation detector with enhanced charge collection |
| DE19616545B4 (de) * | 1996-04-25 | 2006-05-11 | Siemens Ag | Schneller Strahlungsdetektor |
| SE514472C2 (sv) * | 1999-04-14 | 2001-02-26 | Xcounter Ab | Strålningsdetektor och en anordning för användning vid radiografi |
| JP3900992B2 (ja) * | 2002-04-02 | 2007-04-04 | 株式会社日立製作所 | 放射線検出器及び放射線検査装置 |
| US7145986B2 (en) * | 2004-05-04 | 2006-12-05 | General Electric Company | Solid state X-ray detector with improved spatial resolution |
| JP4881071B2 (ja) * | 2006-05-30 | 2012-02-22 | 株式会社日立製作所 | 放射線検出器、及びこれを搭載した放射線撮像装置 |
| DE102007055676A1 (de) * | 2007-11-21 | 2009-06-04 | Siemens Ag | Strahlungswandler, Strahlungsdetektor und Strahlungserfassungseinrichtung |
| JP5155808B2 (ja) * | 2008-10-08 | 2013-03-06 | 株式会社日立製作所 | 半導体放射線検出器および核医学診断装置 |
| WO2010073189A1 (en) * | 2008-12-22 | 2010-07-01 | Koninklijke Philips Electronics N.V. | Radiation detector with improved charge collection and minimized leakage currents |
| NL1037989C2 (en) * | 2010-05-28 | 2011-11-29 | Photonis France Sas | An electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure. |
-
2012
- 2012-12-12 RU RU2014128555A patent/RU2014128555A/ru not_active Application Discontinuation
- 2012-12-12 US US14/362,139 patent/US20140319363A1/en not_active Abandoned
- 2012-12-12 IN IN4758CHN2014 patent/IN2014CN04758A/en unknown
- 2012-12-12 JP JP2014546707A patent/JP6235480B2/ja not_active Expired - Fee Related
- 2012-12-12 BR BR112014014064A patent/BR112014014064A2/pt not_active IP Right Cessation
- 2012-12-12 CN CN201280061619.2A patent/CN104024889A/zh active Pending
- 2012-12-12 WO PCT/IB2012/057212 patent/WO2013088352A2/en not_active Ceased
- 2012-12-12 EP EP12819019.6A patent/EP2748639B1/en not_active Not-in-force
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11313981B2 (en) | 2017-02-28 | 2022-04-26 | The University Of Sussex | X-ray and γ-ray photodiode |
| RU2797929C2 (ru) * | 2017-02-28 | 2023-06-13 | Дзе Юниверсити Оф Сассекс | Рентгеновский и гамма-лучевой фотодиод |
Also Published As
| Publication number | Publication date |
|---|---|
| BR112014014064A8 (pt) | 2017-06-13 |
| EP2748639B1 (en) | 2019-07-17 |
| WO2013088352A3 (en) | 2013-08-08 |
| WO2013088352A2 (en) | 2013-06-20 |
| IN2014CN04758A (OSRAM) | 2015-09-18 |
| US20140319363A1 (en) | 2014-10-30 |
| JP6235480B2 (ja) | 2017-11-22 |
| BR112014014064A2 (pt) | 2017-06-13 |
| EP2748639A2 (en) | 2014-07-02 |
| JP2015507841A (ja) | 2015-03-12 |
| CN104024889A (zh) | 2014-09-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FA94 | Acknowledgement of application withdrawn (non-payment of fees) |
Effective date: 20170918 |