RU2007142656A - Гетероконтактный солнечный элемент с инвертированной геометрией слоистой структуры - Google Patents

Гетероконтактный солнечный элемент с инвертированной геометрией слоистой структуры Download PDF

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RU2007142656A
RU2007142656A RU2007142656/28A RU2007142656A RU2007142656A RU 2007142656 A RU2007142656 A RU 2007142656A RU 2007142656/28 A RU2007142656/28 A RU 2007142656/28A RU 2007142656 A RU2007142656 A RU 2007142656A RU 2007142656 A RU2007142656 A RU 2007142656A
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absorber
light
layer
solar cell
ohmic contact
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Оссамах АБДАЛЛАХ (DE)
Оссамах АБДАЛЛАХ
Джузеппе СИТАРЕЛЛА (DE)
Джузеппе СИТАРЕЛЛА
Маринус КУНСТ (DE)
Маринус КУНСТ
Франк ВЮНШ (DE)
Франк ВЮНШ
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Хан-Майтнер-Институт Берлин Гмбх (De)
Хан-Майтнер-Институт Берлин Гмбх
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    • H—ELECTRICITY
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type the devices comprising monocrystalline or polycrystalline materials
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

1. Гетероконтактный солнечный элемент слоистой структуры с поглотителем из легированного примесью р- или n-типа кристаллического полупроводникового материала, эмиттером из легированного примесью противоположного поглотителю типа аморфного полупроводникового материала, промежуточным слоем с собственной электропроводностью из аморфного полупроводникового материала между поглотителем и эмиттером, покровным слоем на обращенной к свету стороне поглотителя, слоем, образующим отражающее неосновные носители заряда поле на передней поверхности, а также с омической контактной структурой с минимизированной поверхностью затенения на обращенной к свету стороне поглотителя и омической контактной структурой на обращенной от света стороне поглотителя, отличающийся тем, что при инвертированной геометрии слоистой структуры эмиттер (EM) расположен на обращенной от света нижней стороне (LU) поглотителя (АВ), тем, что покровный слой (DS) на обращенной к свету стороне поглотителя (АВ) посредством выбора материала в зависимости от материала поглотителя выполнен как прозрачный просветляющий слой (ARS), а также как образующий отражающее неосновные носители заряда поле на передней поверхности (FSF) пассивирующий слой (PS) поглотителя (АВ), и тем, что омическая контактная структура (OKS) на обращенной к свету верхней стороне (LO) поглотителя (АВ) пронизывает прозрачный просветляющий слой (ARS), а другая омическая контактная структура (UKS) выполнена по большой площади на эмиттере (EM) на обращенной от света нижней стороне (LU) поглотителя (АВ). ! 2. Солнечный элемент по п.1, отличающийся тем, что под пронизывающей прозрачный просветляющий слой (ARS)

Claims (7)

1. Гетероконтактный солнечный элемент слоистой структуры с поглотителем из легированного примесью р- или n-типа кристаллического полупроводникового материала, эмиттером из легированного примесью противоположного поглотителю типа аморфного полупроводникового материала, промежуточным слоем с собственной электропроводностью из аморфного полупроводникового материала между поглотителем и эмиттером, покровным слоем на обращенной к свету стороне поглотителя, слоем, образующим отражающее неосновные носители заряда поле на передней поверхности, а также с омической контактной структурой с минимизированной поверхностью затенения на обращенной к свету стороне поглотителя и омической контактной структурой на обращенной от света стороне поглотителя, отличающийся тем, что при инвертированной геометрии слоистой структуры эмиттер (EM) расположен на обращенной от света нижней стороне (LU) поглотителя (АВ), тем, что покровный слой (DS) на обращенной к свету стороне поглотителя (АВ) посредством выбора материала в зависимости от материала поглотителя выполнен как прозрачный просветляющий слой (ARS), а также как образующий отражающее неосновные носители заряда поле на передней поверхности (FSF) пассивирующий слой (PS) поглотителя (АВ), и тем, что омическая контактная структура (OKS) на обращенной к свету верхней стороне (LO) поглотителя (АВ) пронизывает прозрачный просветляющий слой (ARS), а другая омическая контактная структура (UKS) выполнена по большой площади на эмиттере (EM) на обращенной от света нижней стороне (LU) поглотителя (АВ).
2. Солнечный элемент по п.1, отличающийся тем, что под пронизывающей прозрачный просветляющий слой (ARS) контактной структурой (OKS) в поглотителе (AB) выполнены области (n+), отражающие носители заряда.
3. Солнечный элемент по п.1, отличающийся тем, что поглотитель (АВ) состоит из легированного примесью n-типа кристаллического кремния (n c-Si), эмиттер (EM) - из легированного примесью р-типа аморфного кремния (р а-Si:Н), а промежуточный слой (IZS) с собственной электропроводностью - из нелегированного аморфного кремния (i a-Si:Н).
4. Солнечный элемент по п.1, отличающийся тем, что прозрачный просветляющий слой (ARS) состоит из нитрита кремния (Si3N4).
5. Солнечный элемент по п.1, отличающийся тем, что одна омическая контактная структура (OKS) на обращенной к свету верхней стороне поглотителя выполнена в виде контактных пальцев или контактной решетки (KG) из серебра (Ag), а другая омическая контактная структура (UKS) - в виде тонкого плоского металлического слоя (MS) из золота (Au).
6. Солнечный элемент по п.1, отличающийся тем, что поглотитель (АВ) состоит из самонесущей пластины.
7. Солнечный элемент по п.1, отличающийся тем, что предусмотрены тонкослойное строение для слоев солнечного элемента (SZ) и несущая стеклянная подложка на обращенной от света нижней стороне (LU) поглотителя (АВ).
RU2007142656/28A 2005-04-20 2006-04-11 Гетероконтактный солнечный элемент с инвертированной геометрией слоистой структуры RU2007142656A (ru)

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DE102005019225.4 2005-04-20
DE102005019225A DE102005019225B4 (de) 2005-04-20 2005-04-20 Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie

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US (1) US20080156370A1 (ru)
EP (1) EP1875517B1 (ru)
JP (1) JP5237791B2 (ru)
KR (1) KR101219926B1 (ru)
CN (1) CN100524840C (ru)
AT (1) ATE475201T1 (ru)
AU (1) AU2006236984A1 (ru)
BR (1) BRPI0607528A2 (ru)
CA (1) CA2605600A1 (ru)
DE (2) DE102005019225B4 (ru)
ES (1) ES2348402T3 (ru)
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ATE475201T1 (de) 2010-08-15
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US20080156370A1 (en) 2008-07-03
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