RU2001129132A - K-MOS memory cell of dynamic random access memory - Google Patents
K-MOS memory cell of dynamic random access memory Download PDFInfo
- Publication number
- RU2001129132A RU2001129132A RU2001129132/09A RU2001129132A RU2001129132A RU 2001129132 A RU2001129132 A RU 2001129132A RU 2001129132/09 A RU2001129132/09 A RU 2001129132/09A RU 2001129132 A RU2001129132 A RU 2001129132A RU 2001129132 A RU2001129132 A RU 2001129132A
- Authority
- RU
- Russia
- Prior art keywords
- gate
- random access
- switching
- dynamic random
- memory cell
- Prior art date
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
RU2001129132/09A RU2001129132A (en) | 2001-10-30 | 2001-10-30 | K-MOS memory cell of dynamic random access memory |
Applications Claiming Priority (1)
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RU2001129132/09A RU2001129132A (en) | 2001-10-30 | 2001-10-30 | K-MOS memory cell of dynamic random access memory |
Publications (1)
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RU2001129132A true RU2001129132A (en) | 2003-08-20 |
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RU2001129132/09A RU2001129132A (en) | 2001-10-30 | 2001-10-30 | K-MOS memory cell of dynamic random access memory |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2465659C1 (en) * | 2011-08-09 | 2012-10-27 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский технологический университет "МИСиС" | Memory cell for high-speed eeprom with controlled potential of under-gate region |
RU2468510C1 (en) * | 2011-09-16 | 2012-11-27 | Виктор Николаевич Мурашёв | Ternary cmos with nor logic element |
RU2481653C2 (en) * | 2009-03-30 | 2013-05-10 | Виктор Николаевич Мурашев | Memory cell for fast erasable programmable read-only memory and method of its programming |
RU2580071C1 (en) * | 2015-04-07 | 2016-04-10 | Федеральное государственное учреждение "Федеральный научный центр Научно-исследовательский институт системных исследований Российской академии наук"(ФГУ ФНЦ НИИСИ РАН) | Memory cell for complementary metal-oxide-semiconductor ram structure |
-
2001
- 2001-10-30 RU RU2001129132/09A patent/RU2001129132A/en not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2481653C2 (en) * | 2009-03-30 | 2013-05-10 | Виктор Николаевич Мурашев | Memory cell for fast erasable programmable read-only memory and method of its programming |
RU2465659C1 (en) * | 2011-08-09 | 2012-10-27 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский технологический университет "МИСиС" | Memory cell for high-speed eeprom with controlled potential of under-gate region |
RU2468510C1 (en) * | 2011-09-16 | 2012-11-27 | Виктор Николаевич Мурашёв | Ternary cmos with nor logic element |
RU2580071C1 (en) * | 2015-04-07 | 2016-04-10 | Федеральное государственное учреждение "Федеральный научный центр Научно-исследовательский институт системных исследований Российской академии наук"(ФГУ ФНЦ НИИСИ РАН) | Memory cell for complementary metal-oxide-semiconductor ram structure |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FA93 | Acknowledgement of application withdrawn (no request for examination) |
Effective date: 20080918 |